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1.发明授权Method of manufacture of semiconductor device and conductive compositions used therein 有权其中使用的半导体器件和导电组合物的制造方法公开(公告)号：US07906045B2
公开(公告)日：2011-03-15
申请号：US12127969
申请日：2008-05-28
IPC分类号： H01B1/22 , B05D5/12 , H01L31/0224
CPC分类号： H01B1/22 , C03C3/064 , C03C3/072 , C03C3/0745 , C03C8/10 , C03C8/12 , C03C8/14 , C03C8/16 , C03C8/18 , C03C8/20 , C03C14/006 , C03C2214/08 , C03C2214/16 , H01L31/022425 , H05K1/092 , Y02E10/50
摘要： The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Zn-containing additive wherein the particle size of said zinc-containing additive is in the range of 7 nanometers to less than 100 nanometers; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600° C.; dispersed in (d) organic medium. The present invention is further directed to a semiconductor device and a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition as describe above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode.
摘要翻译： 本发明涉及一种厚膜导电组合物，其包含：（a）导电银粉; （b）含锌添加剂，其中所述含锌添加剂的粒度在7纳米至小于100纳米的范围内; （c）玻璃料，其中所述玻璃料的软化点在300-600℃的范围内。 分散在（d）有机介质中。 本发明还涉及一种由半导体构成的半导体器件和半导体器件的制造方法，所述结构元件由在半导体的主表面上形成的具有pn结和绝缘膜的半导体构成，包括以下步骤：（a）施加 在上述绝缘膜上形成如上所述的厚膜组合物; 和（b）烧制所述半导体，绝缘膜和厚膜组合物以形成电极。
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2.发明申请CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES: MG-CONTAINING ADDITIVE 有权用于制造半导体器件的导电组合物和方法：含MG的添加剂公开(公告)号：US20100275997A1
公开(公告)日：2010-11-04
申请号：US12839653
申请日：2010-07-20
申请人： Richard John Sheffield Young , Michael Rose , Kurt Richard Mikeska , Alan Frederick Carroll , Kenneth Warren Hang , Alistair Graeme Prince
发明人： Richard John Sheffield Young , Michael Rose , Kurt Richard Mikeska , Alan Frederick Carroll , Kenneth Warren Hang , Alistair Graeme Prince
IPC分类号： H01L31/0264 , H01B1/02 , H01B1/12 , H01L21/02 , H01L29/12
CPC分类号： H01B1/22 , C03C8/14 , C03C8/18 , H01B1/16 , H01L21/2225 , H01L31/022425 , H05K1/092 , Y10T428/31536 , Y10T428/31663 , Y10T428/31678
摘要： Described herein are a silicon semiconductor device and a conductive silver paste for use in the front side of a solar cell device.
摘要翻译： 这里描述的是用于太阳能电池装置正面的硅半导体器件和导电银膏。
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3.发明授权Lead-free conductive compositions and processes for use in the manufacture of semiconductor devices: Mg-containing additive 有权无铅导电组合物和用于制造半导体器件的方法：含Mg添加剂公开(公告)号：US07780878B2
公开(公告)日：2010-08-24
申请号：US12254330
申请日：2008-10-20
申请人： Richard John Sheffield Young , Michael Rose , Kurt Richard Mikeska , Alan Frederick Carroll , Kenneth Warren Hang , Alistair Graeme Prince
发明人： Richard John Sheffield Young , Michael Rose , Kurt Richard Mikeska , Alan Frederick Carroll , Kenneth Warren Hang , Alistair Graeme Prince
IPC分类号： H01B1/22
CPC分类号： H01B1/22 , C03C8/14 , C03C8/18 , H01B1/16 , H01L31/022425 , H01L31/022433 , H01L31/1804 , H05K1/092 , Y02E10/547 , Y02P70/521 , Y10T428/31536
摘要： Described herein are a silicon semiconductor device and a conductive lead-free silver paste for use in the front side of a solar cell device.
摘要翻译： 这里描述的是用于太阳能电池装置正面的硅半导体器件和导电性无铅银膏。
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4.发明授权Method of manufacture of semiconductor device and conductive compositions used therein 失效其中使用的半导体器件和导电组合物的制造方法公开(公告)号：US07556748B2
公开(公告)日：2009-07-07
申请号：US11106329
申请日：2005-04-14
IPC分类号： H01B1/22
CPC分类号： H01B1/22 , C03C3/064 , C03C3/072 , C03C3/0745 , C03C8/10 , C03C8/12 , C03C8/14 , C03C8/16 , C03C8/18 , C03C8/20 , C03C14/006 , C03C2214/08 , C03C2214/16 , H01L31/022425 , H05K1/092 , Y02E10/50
摘要： The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Zn-containing additive wherein the particle size of said zinc-containing additive is in the range of 7 nanometers to less than 100 nanometers; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600° C.; dispersed in (d) organic medium.The present invention is further directed to a semiconductor device and a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition as describe above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode.
摘要翻译： 本发明涉及一种厚膜导电组合物，其包含：（a）导电银粉; （b）含锌添加剂，其中所述含锌添加剂的粒度在7纳米至小于100纳米的范围内; （c）玻璃料，其中所述玻璃料的软化点在300-600℃的范围内。 分散在（d）有机介质中。 本发明还涉及一种由半导体构成的半导体器件和半导体器件的制造方法，所述结构元件由在半导体主表面上形成的具有pn结和绝缘膜的半导体构成，包括以下步骤：（a）施加 在上述绝缘膜上形成如上所述的厚膜组合物; 和（b）烧制所述半导体，绝缘膜和厚膜组合物以形成电极。
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5.发明授权Conductive compositions and processes for use in the manufacture of semiconductor devices: Mg-containing additive 有权用于制造半导体器件的导电组合物和方法：含Mg添加剂公开(公告)号：US07998371B2
公开(公告)日：2011-08-16
申请号：US12839653
申请日：2010-07-20
申请人： Richard John Sheffield Young , Michael Rose , Kurt Richard Mikeska , Alan Frederick Carroll , Kenneth Warren Hang , Alistair Graeme Prince
发明人： Richard John Sheffield Young , Michael Rose , Kurt Richard Mikeska , Alan Frederick Carroll , Kenneth Warren Hang , Alistair Graeme Prince
IPC分类号： H01B1/22
CPC分类号： H01B1/22 , C03C8/14 , C03C8/18 , H01B1/16 , H01L21/2225 , H01L31/022425 , H05K1/092 , Y10T428/31536 , Y10T428/31663 , Y10T428/31678
摘要： Described herein are a silicon semiconductor device and a conductive silver paste for use in the front side of a solar cell device.
摘要翻译： 这里描述的是用于太阳能电池装置正面的硅半导体器件和导电银膏。
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6.发明授权Conductive compositions and processes for use in the manufacture of semiconductor devices: Mg-containing additive 有权用于制造半导体器件的导电组合物和方法：含Mg添加剂公开(公告)号：US07790065B2
公开(公告)日：2010-09-07
申请号：US12254246
申请日：2008-10-20
申请人： Richard John Sheffield Young , Michael Rose , Kurt Richard Mikeska , Alan Frederick Carroll , Kenneth Warren Hang , Alistair Graeme Prince
发明人： Richard John Sheffield Young , Michael Rose , Kurt Richard Mikeska , Alan Frederick Carroll , Kenneth Warren Hang , Alistair Graeme Prince
IPC分类号： H01B1/22
CPC分类号： H01B1/22 , C03C8/14 , C03C8/18 , H01B1/16 , H01L21/2225 , H01L31/022425 , H05K1/092 , Y10T428/31536 , Y10T428/31663 , Y10T428/31678
摘要： Described herein are a silicon semiconductor device and a conductive silver paste for use in the front side of a solar cell device.
摘要翻译： 这里描述的是用于太阳能电池装置正面的硅半导体器件和导电银膏。
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7.发明申请LEAD-FREE CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES: Mg-CONTAINING ADDITIVE 有权无铅导电组合物和半导体器件制造中使用的方法：含Mg添加剂公开(公告)号：US20090101872A1
公开(公告)日：2009-04-23
申请号：US12254330
申请日：2008-10-20
申请人： Richard John Sheffield Young , Michael Rose , Kurt Richard Mikeska , Alan Frederick Carroll , Kenneth Warren Hang , Alistair Graeme Prince
发明人： Richard John Sheffield Young , Michael Rose , Kurt Richard Mikeska , Alan Frederick Carroll , Kenneth Warren Hang , Alistair Graeme Prince
IPC分类号： H01B1/22 , H01L21/283
CPC分类号： H01B1/22 , C03C8/14 , C03C8/18 , H01B1/16 , H01L31/022425 , H01L31/022433 , H01L31/1804 , H05K1/092 , Y02E10/547 , Y02P70/521 , Y10T428/31536
摘要： Described herein are a silicon semiconductor device and a conductive lead-free silver paste for use in the front side of a solar cell device.
摘要翻译： 这里描述的是用于太阳能电池装置正面的硅半导体器件和导电性无铅银膏。
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公开(公告)号：US08394297B2
公开(公告)日：2013-03-12
申请号：US13042770
申请日：2011-03-08
IPC分类号： H01B1/24 , B05D5/12 , H01L31/0224
CPC分类号： H01B1/22 , C03C3/064 , C03C3/072 , C03C3/0745 , C03C8/10 , C03C8/12 , C03C8/14 , C03C8/16 , C03C8/18 , C03C8/20 , C03C14/006 , C03C2214/08 , C03C2214/16 , H01L31/022425 , H05K1/092 , Y02E10/50
摘要： The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Zn-containing additive wherein the particle size of said zinc-containing additive is in the range of 7 nanometers to less than 100 nanometers; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600° C.; dispersed in (d) organic medium. The present invention is further directed to a semiconductor device and a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition as describe above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode.
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9.发明申请METHOD OF MANUFACTURE OF SEMICONDUCTOR DEVICE AND CONDUCTIVE COMPOSITIONS USED THEREIN 失效半导体器件制造方法及其使用的导电组合物公开(公告)号：US20110155240A1
公开(公告)日：2011-06-30
申请号：US13042770
申请日：2011-03-08
IPC分类号： H01L31/0224 , H01B1/22 , H01L21/283 , H01L29/45
CPC分类号： H01B1/22 , C03C3/064 , C03C3/072 , C03C3/0745 , C03C8/10 , C03C8/12 , C03C8/14 , C03C8/16 , C03C8/18 , C03C8/20 , C03C14/006 , C03C2214/08 , C03C2214/16 , H01L31/022425 , H05K1/092 , Y02E10/50
摘要： The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Zn-containing additive wherein the particle size of said zinc-containing additive is in the range of 7 nanometers to less than 100 nanometers; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600° C.; dispersed in (d) organic medium.The present invention is further directed to a semiconductor device and a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition as describe above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode.
摘要翻译： 本发明涉及一种厚膜导电组合物，其包含：（a）导电银粉; （b）含锌添加剂，其中所述含锌添加剂的粒度在7纳米至小于100纳米的范围内; （c）玻璃料，其中所述玻璃料的软化点在300-600℃的范围内。 分散在（d）有机介质中。 本发明还涉及一种由半导体构成的半导体器件和半导体器件的制造方法，所述结构元件由在半导体主表面上形成的具有pn结和绝缘膜的半导体构成，包括以下步骤：（a）施加 在上述绝缘膜上形成如上所述的厚膜组合物; 和（b）烧制所述半导体，绝缘膜和厚膜组合物以形成电极。
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10.发明申请CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES: Mg-CONTAINING ADDITIVE 有权在半导体器件制造中使用的导电组合物和方法：含Mg添加剂公开(公告)号：US20090104461A1
公开(公告)日：2009-04-23
申请号：US12254246
申请日：2008-10-20
申请人： Richard John Sheffield Young , Michael Rose , Kurt Richard Mikeska , Alan Frederick Carroll , Kenneth Warren Hang , Alistair Graeme Prince
发明人： Richard John Sheffield Young , Michael Rose , Kurt Richard Mikeska , Alan Frederick Carroll , Kenneth Warren Hang , Alistair Graeme Prince
CPC分类号： H01B1/22 , C03C8/14 , C03C8/18 , H01B1/16 , H01L21/2225 , H01L31/022425 , H05K1/092 , Y10T428/31536 , Y10T428/31663 , Y10T428/31678
摘要： Described herein are a silicon semiconductor device and a conductive silver paste for use in the front side of a solar cell device.
摘要翻译： 这里描述的是用于太阳能电池装置正面的硅半导体器件和导电银膏。
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