PROCESS FOR THE FORMATION OF A SILVER BACK ELECTRODE OF A PASSIVATED EMITTER AND REAR CONTACT SILICON SOLAR CELL
    2.
    发明申请
    PROCESS FOR THE FORMATION OF A SILVER BACK ELECTRODE OF A PASSIVATED EMITTER AND REAR CONTACT SILICON SOLAR CELL 审中-公开
    形成钝化发射体和后接触硅太阳能电池的银背电极的工艺

    公开(公告)号:US20130061918A1

    公开(公告)日:2013-03-14

    申请号:US13410555

    申请日:2012-03-02

    IPC分类号: H01L31/0224 H01L31/18

    摘要: A process for the formation of an electrically conductive silver back electrode of a PERC silicon solar cell comprising the steps: (1) providing a p-type silicon wafer having on its front-side an n-type emitter with an ARC layer thereon and on its back-side a perforated dielectric passivation layer with local BSF contacts at the places of the perforations, (2) applying and drying a silver paste to form a silver back electrode pattern connecting the local BSF contacts on the back-side of the silicon wafer, and (3) firing the dried silver paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the silver paste has no or only poor fire-through capability and comprises particulate silver and an organic vehicle.

    摘要翻译: 一种用于形成PERC硅太阳能电池的导电银背电极的方法,包括以下步骤:(1)提供在其正面上具有其上的ARC层的n型发射体和p型硅晶片的p型硅晶片, 其背面是在穿孔位置处具有局部BSF接触的穿孔电介质钝化层,(2)施加和干燥银膏以形成连接硅晶片背面上的局部BSF触点的银背电极图案 ,和(3)烧制干燥的银浆,由此晶片达到700-900℃的峰值温度,其中银浆没有或仅仅具有差的穿透能力,并且包括颗粒状银和有机载体。