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    PROCESS FOR THE FORMATION OF A SILVER BACK ELECTRODE OF A PASSIVATED EMITTER AND REAR CONTACT SILICON SOLAR CELL
    2.
    发明申请
    PROCESS FOR THE FORMATION OF A SILVER BACK ELECTRODE OF A PASSIVATED EMITTER AND REAR CONTACT SILICON SOLAR CELL 审中-公开
    形成钝化发射体和后接触硅太阳能电池的银背电极的工艺

    公开(公告)号：US20130061918A1

    公开(公告)日：2013-03-14

    申请号：US13410555

    申请日：2012-03-02

    申请人： Kenneth Warren Hang ,  Giovanna Laudisio ,  Alistair Graeme Prince ,  Rosalynne Sophie Watt

    发明人： Kenneth Warren Hang ,  Giovanna Laudisio ,  Alistair Graeme Prince ,  Rosalynne Sophie Watt

    IPC分类号： H01L31/0224 ,  H01L31/18

    CPC分类号： H01B1/22 ,  C03C8/02 ,  C03C8/10 ,  C03C8/18 ,  H01L31/022425 ,  Y02E10/50

    摘要： A process for the formation of an electrically conductive silver back electrode of a PERC silicon solar cell comprising the steps: (1) providing a p-type silicon wafer having on its front-side an n-type emitter with an ARC layer thereon and on its back-side a perforated dielectric passivation layer with local BSF contacts at the places of the perforations, (2) applying and drying a silver paste to form a silver back electrode pattern connecting the local BSF contacts on the back-side of the silicon wafer, and (3) firing the dried silver paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the silver paste has no or only poor fire-through capability and comprises particulate silver and an organic vehicle.

    摘要翻译： 一种用于形成PERC硅太阳能电池的导电银背电极的方法，包括以下步骤：（1）提供在其正面上具有其上的ARC层的n型发射体和p型硅晶片的p型硅晶片， 其背面是在穿孔位置处具有局部BSF接触的穿孔电介质钝化层，（2）施加和干燥银膏以形成连接硅晶片背面上的局部BSF触点的银背电极图案 ，和（3）烧制干燥的银浆，由此晶片达到700-900℃的峰值温度，其中银浆没有或仅仅具有差的穿透能力，并且包括颗粒状银和有机载体。

    PROCESS FOR THE PRODUCTION OF A MWT SILICON SOLAR CELL
    10.
    发明申请
    PROCESS FOR THE PRODUCTION OF A MWT SILICON SOLAR CELL 失效
    制造MWT硅太阳能电池的方法

    公开(公告)号：US20110139238A1

    公开(公告)日：2011-06-16

    申请号：US12963003

    申请日：2010-12-08

    申请人： Kenneth Warren Hang ,  Giovanna Laudisio ,  Alistair Graeme Prince ,  Richard John Sheffield Young

    发明人： Kenneth Warren Hang ,  Giovanna Laudisio ,  Alistair Graeme Prince ,  Richard John Sheffield Young

    IPC分类号： H01L31/02 ,  H01L31/18

    CPC分类号： C03C8/02 ,  C03C8/12 ,  C03C8/16 ,  C03C8/18 ,  H01B1/22 ,  H01L31/02245 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/928

    摘要： A process for the production of a MWT silicon solar cell comprising the steps: (1) providing a p-type silicon wafer with (i) holes forming vias between the front-side and the back-side of the wafer and (ii) an n-type emitter extending over the entire front-side and the inside of the holes, (2) applying a conductive metal paste to the holes of the silicon wafer to provide at least the inside of the holes with a metallization, (3) drying the applied conductive metal paste, and (4) firing the dried conductive metal paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the conductive metal paste has no or only poor fire-through capability and comprises (a) at least one particulate electrically conductive metal selected from the group consisting of silver, copper and nickel and (b) an organic vehicle.

    摘要翻译： 一种用于生产MWT硅太阳能电池的方法，包括以下步骤：（1）提供p型硅晶片，其具有（i）在晶片的前侧和后侧之间形成通孔的孔，以及（ii） n型发射体在孔的整个前侧和内侧延伸，（2）将导电金属膏施加到硅晶片的孔中，至少提供孔的内部金属化，（3）干燥 施加的导电性金属糊料，（4）烧制干燥后的导电性金属糊料，由此晶片达到700〜900℃的峰值温度，其中导电性金属糊料没有或仅有差的穿透能力，并且包括（a ）至少一种选自银，铜和镍的颗粒状导电金属和（b）有机载体。