Drive Method of Nanogap Switching Element and Storage Apparatus Equipped with Nanogap Switching Element
    1.
    发明申请
    Drive Method of Nanogap Switching Element and Storage Apparatus Equipped with Nanogap Switching Element 有权
    纳米开关元件驱动方法及配备纳米开关元件的储存装置

    公开(公告)号:US20090161407A1

    公开(公告)日:2009-06-25

    申请号:US12338313

    申请日:2008-12-18

    IPC分类号: G11C11/00

    摘要: A nanogap switching element is equipped with an inter-electrode gap portion including a gap of a nanometer order between a first electrode and a second electrode. A switching phenomenon is caused in the inter-electrode gap portion by applying a voltage between the first and second electrodes. The nanogap switching element is shifted from its low resistance state to its high resistance state by receiving a voltage pulse application of a first voltage value, and shifted from its high resistance state to its low resistance state by receiving a voltage pulse application of a second voltage value lower than the first voltage value. When the nanogap switching element is shifted from the high resistance state to the low resistance state, a voltage pulse of an intermediate voltage value between the first and second voltage values is applied thereto before the voltage pulse application of the second voltage value thereto.

    摘要翻译: 纳米点开关元件配备有包括第一电极和第二电极之间的纳米级间隙的电极间间隙部分。 通过在第一和第二电极之间施加电压,在电极间间隙部分产生切换现象。 纳米点开关元件通过接收第一电压值的电压脉冲而从其低电阻状态转移到其高电阻状态,并且通过接收施加第二电压的电压脉冲从其高电阻状态转移到其低电阻状态 值低于第一电压值。 当纳米点开关元件从高电阻状态移动到低电阻状态时,在施加第二电压值的电压脉冲之前,施加第一和第二电压值之间的中间电压值的电压脉冲。

    Method of Fabricating Element Including Nanogap Electrodes
    2.
    发明申请
    Method of Fabricating Element Including Nanogap Electrodes 有权
    包括纳米石墨电极的元件制造方法

    公开(公告)号:US20100257726A1

    公开(公告)日:2010-10-14

    申请号:US12756522

    申请日:2010-04-08

    IPC分类号: H01C17/00

    摘要: Disclosed is a fabrication method of an element with nanogap electrodes including a first electrode, a second electrode provided above the first electrode, and a gap provided between the first electrode and the second electrode, the gap being in an order of nanometer to allow resistive state to be switched by applying a predetermined voltage between the first electrode and the second electrode, the method comprising: forming the first electrode; forming a spacer on an upper surface of the first electrode; forming the second electrode in contact with an upper surface of the spacer; and removing the spacer to form the gap.

    摘要翻译: 公开了一种具有纳米隙电极的元件的制造方法,其包括第一电极,设置在第一电极上方的第二电极和设置在第一电极和第二电极之间的间隙,间隙为纳米级,以允许电阻状态 通过在第一电极和第二电极之间施加预定电压进行切换,该方法包括:形成第一电极; 在所述第一电极的上表面上形成间隔物; 形成与间隔物的上表面接触的第二电极; 并移除间隔物以形成间隙。