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1.发明授权公开(公告)号：US08592892B2
公开(公告)日：2013-11-26
申请号：US11898603
申请日：2007-09-13
IPC分类号： H01L29/66
CPC分类号： H01L29/7881 , H01L21/28273 , H01L21/28282 , H01L29/42324 , H01L29/513 , H01L29/792
摘要： A nonvolatile semiconductor memory device includes: a memory element, the memory element including: a semiconductor substrate; a first insulating film formed on a region in the semiconductor substrate located between a source region and a drain region, and having a stack structure formed with a first insulating layer, a second insulating layer, and a third insulating layer in this order, the first insulating layer including an electron trapping site, the second insulating layer not including the electron trapping site, and the third insulating layer including the electron trapping site, and the electron trapping site being located in a position lower than conduction band minimum of the first through third insulating layers while being located in a position higher than conduction band minimum of a material forming the semiconductor substrate; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second insulating film.
摘要翻译： 非易失性半导体存储器件包括：存储元件，所述存储元件包括：半导体衬底; 第一绝缘膜，形成在位于源区和漏区之间的半导体衬底的区域上，并且具有依次形成有第一绝缘层，第二绝缘层和第三绝缘层的堆叠结构，第一绝缘膜 包含电子俘获位置的绝缘层，不包含电子俘获位置的第二绝缘层和包含电子捕获位点的第三绝缘层，并且电子捕获位点位于低于第一至第三区域的导带最小值的位置 绝缘层位于高于形成半导体衬底的材料的导带最小值的位置; 形成在所述第一绝缘膜上的电荷存储膜; 形成在电荷存储膜上的第二绝缘膜; 以及形成在所述第二绝缘膜上的控制栅电极。
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2.发明申请公开(公告)号：US20080135922A1
公开(公告)日：2008-06-12
申请号：US11898603
申请日：2007-09-13
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L29/7881 , H01L21/28273 , H01L21/28282 , H01L29/42324 , H01L29/513 , H01L29/792
摘要： A nonvolatile semiconductor memory device includes: a memory element, the memory element including: a semiconductor substrate; a first insulating film formed on a region in the semiconductor substrate located between a source region and a drain region, and having a stack structure formed with a first insulating layer, a second insulating layer, and a third insulating layer in this order, the first insulating layer including an electron trapping site, the second insulating layer not including the electron trapping site, and the third insulating layer including the electron trapping site, and the electron trapping site being located in a position lower than conduction band minimum of the first through third insulating layers while being located in a position higher than conduction band minimum of a material forming the semiconductor substrate; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second insulating film.
摘要翻译： 非易失性半导体存储器件包括：存储元件，所述存储元件包括：半导体衬底; 第一绝缘膜，形成在位于源区和漏区之间的半导体衬底的区域上，并且具有依次形成有第一绝缘层，第二绝缘层和第三绝缘层的堆叠结构，第一绝缘膜 包含电子俘获位置的绝缘层，不包含电子俘获位置的第二绝缘层和包含电子捕获位点的第三绝缘层，并且电子捕获位点位于低于第一至第三区域的导带最小值的位置 绝缘层位于高于形成半导体衬底的材料的导带最小值的位置; 形成在所述第一绝缘膜上的电荷存储膜; 形成在电荷存储膜上的第二绝缘膜; 以及形成在所述第二绝缘膜上的控制栅电极。
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公开(公告)号：US20110003481A1
公开(公告)日：2011-01-06
申请号：US12801912
申请日：2010-07-01
IPC分类号： H01L21/314
CPC分类号： H01L27/11568 , C23C8/02 , C23C8/24 , C23C8/80 , H01L21/2652 , H01L21/28202 , H01L21/28238 , H01L21/28273 , H01L21/3144 , H01L21/3145 , H01L21/3185 , H01L27/115 , H01L27/11521 , H01L29/105 , H01L29/513
摘要： It is made possible to restrain generation of defects at the time of insulating film formation. A method for manufacturing a semiconductor device, includes: placing a semiconductor substrate into an atmosphere, thereby forming a nitride film on a surface of the semiconductor substrate, the atmosphere containing a first nitriding gas nitriding the surface of the semiconductor substrate and a first diluent gas not actually reacting with the semiconductor substrate, the ratio of the sum of the partial pressure of the first diluent gas and the partial pressure of the first nitriding gas to the partial pressure of the first nitriding gas being 5 or higher, and the total pressure of the atmosphere being 40 Torr or lower.
摘要翻译： 可以抑制成膜时的缺陷的产生。 一种制造半导体器件的方法，包括：将半导体衬底放置在大气中，从而在所述半导体衬底的表面上形成氮化物膜，所述气氛包含氮化所述半导体衬底的表面的第一氮化气体和第一稀释气体 实际上不与半导体衬底反应，第一稀释气体的分压和第一氮化气体的分压与第一氮化气体的分压之和的比率为5以上， 气氛为40乇或更低。
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公开(公告)号：US07749919B2
公开(公告)日：2010-07-06
申请号：US11896860
申请日：2007-09-06
申请人： Kiwamu Sakuma , Daisuke Matsushita , Koichi Kato , Yasushi Nakasaki , Izumi Hirano , Kouichi Muraoka , Yuichiro Mitani , Shigeto Fukatsu , Toshihide Ito
发明人： Kiwamu Sakuma , Daisuke Matsushita , Koichi Kato , Yasushi Nakasaki , Izumi Hirano , Kouichi Muraoka , Yuichiro Mitani , Shigeto Fukatsu , Toshihide Ito
IPC分类号： H01L21/321
CPC分类号： H01L21/28273
摘要： A semiconductor device includes: a semiconductor substrate; a source region and a drain region formed at a distance from each other in the semiconductor substrate; a first insulating film formed on a portion of the semiconductor substrate, the portion being located between the source region and the drain region; a charge storage film formed on the first insulating film; a second insulating film formed above the charge storage film and made of a high-permittivity material; a control gate electrode formed above the second insulating film; and a silicon nitride layer including nitrogen atoms having three-coordinate nitrogen bonds, at least one of second-nearest neighbor atoms of the nitrogen atoms being a nitrogen atom. At least one of the charge storage film and the control gate electrode contains silicon, the silicon nitride layer is located between the second insulating film and the at least one of the charge storage film and the control gate electrode.
摘要翻译： 半导体器件包括：半导体衬底; 在半导体衬底中形成为彼此间隔一定距离的源极区域和漏极区域; 形成在半导体衬底的一部分上的第一绝缘膜，该部分位于源区和漏区之间; 形成在所述第一绝缘膜上的电荷存储膜; 形成在电荷存储膜上方并由高介电常数材料制成的第二绝缘膜; 形成在所述第二绝缘膜上方的控制栅电极; 和包含具有三配位氮键的氮原子的氮化硅层，氮原子的第二最近邻原子中的至少一个为氮原子。 电荷存储膜和控制栅电极中的至少一个包含硅，氮化硅层位于第二绝缘膜和电荷存储膜和控制栅电极中的至少一个之间。
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公开(公告)号：US08557717B2
公开(公告)日：2013-10-15
申请号：US12801912
申请日：2010-07-01
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L27/11568 , C23C8/02 , C23C8/24 , C23C8/80 , H01L21/2652 , H01L21/28202 , H01L21/28238 , H01L21/28273 , H01L21/3144 , H01L21/3145 , H01L21/3185 , H01L27/115 , H01L27/11521 , H01L29/105 , H01L29/513
摘要： It is made possible to restrain generation of defects at the time of insulating film formation. A method for manufacturing a semiconductor device, includes: placing a semiconductor substrate into an atmosphere, thereby forming a nitride film on a surface of the semiconductor substrate, the atmosphere containing a first nitriding gas nitriding the surface of the semiconductor substrate and a first diluent gas not actually reacting with the semiconductor substrate, the ratio of the sum of the partial pressure of the first diluent gas and the partial pressure of the first nitriding gas to the partial pressure of the first nitriding gas being 5 or higher, and the total pressure of the atmosphere being 40 Torr or lower.
摘要翻译： 可以抑制成膜时的缺陷的产生。 一种制造半导体器件的方法，包括：将半导体衬底放置在大气中，从而在所述半导体衬底的表面上形成氮化物膜，所述气氛包含氮化所述半导体衬底的表面的第一氮化气体和第一稀释气体 实际上不与半导体衬底反应，第一稀释气体的分压和第一氮化气体的分压与第一氮化气体的分压之和的比率为5以上， 气氛为40乇或更低。
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公开(公告)号：US07772129B2
公开(公告)日：2010-08-10
申请号：US11547691
申请日：2006-08-28
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L27/11568 , C23C8/02 , C23C8/24 , C23C8/80 , H01L21/2652 , H01L21/28202 , H01L21/28238 , H01L21/28273 , H01L21/3144 , H01L21/3145 , H01L21/3185 , H01L27/115 , H01L27/11521 , H01L29/105 , H01L29/513
摘要： It is made possible to restrain generation of defects at the time of insulating film formation. A method for manufacturing a semiconductor device, includes: placing a semiconductor substrate into an atmosphere, thereby forming a nitride film on a surface of the semiconductor substrate, the atmosphere containing a first nitriding gas nitriding the surface of the semiconductor substrate and a first diluent gas not actually reacting with the semiconductor substrate, the ratio of the sum of the partial pressure of the first diluent gas and the partial pressure of the first nitriding gas to the partial pressure of the first nitriding gas being 5 or higher, and the total pressure of the atmosphere being 40 Torr or lower.
摘要翻译： 可以抑制成膜时的缺陷的产生。 一种制造半导体器件的方法，包括：将半导体衬底放置在大气中，从而在所述半导体衬底的表面上形成氮化物膜，所述气氛包含氮化所述半导体衬底的表面的第一氮化气体和第一稀释气体 实际上不与半导体衬底反应，第一稀释气体的分压和第一氮化气体的分压与第一氮化气体的分压之和的比率为5以上， 气氛为40乇或更低。
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公开(公告)号：US20080173927A1
公开(公告)日：2008-07-24
申请号：US11896860
申请日：2007-09-06
申请人： Kiwamu Sakuma , Daisuke Matsushita , Koichi Kato , Yasushi Nakasaki , Izumi Hirano , Kouichi Muraoka , Yuichiro Mitani , Shigeto Fukatsu , Toshihide Ito
发明人： Kiwamu Sakuma , Daisuke Matsushita , Koichi Kato , Yasushi Nakasaki , Izumi Hirano , Kouichi Muraoka , Yuichiro Mitani , Shigeto Fukatsu , Toshihide Ito
IPC分类号： H01L29/788 , H01L21/336 , H01L29/792
CPC分类号： H01L21/28273
摘要： A semiconductor device includes: a semiconductor substrate; a source region and a drain region formed at a distance from each other in the semiconductor substrate; a first insulating film formed on a portion of the semiconductor substrate, the portion being located between the source region and the drain region; a charge storage film formed on the first insulating film; a second insulating film formed above the charge storage film and made of a high-permittivity material; a control gate electrode formed above the second insulating film; and a silicon nitride layer including nitrogen atoms having three-coordinate nitrogen bonds, at least one of second-nearest neighbor atoms of the nitrogen atoms being a nitrogen atom. At least one of the charge storage film and the control gate electrode contains silicon, the silicon nitride layer is located between the second insulating film and the at least one of the charge storage film and the control gate electrode.
摘要翻译： 半导体器件包括：半导体衬底; 在半导体衬底中形成为彼此间隔一定距离的源极区域和漏极区域; 形成在半导体衬底的一部分上的第一绝缘膜，该部分位于源区和漏区之间; 形成在所述第一绝缘膜上的电荷存储膜; 形成在电荷存储膜上方并由高介电常数材料制成的第二绝缘膜; 形成在所述第二绝缘膜上方的控制栅电极; 和包含具有三配位氮键的氮原子的氮化硅层，氮原子的第二最近邻原子中的至少一个为氮原子。 电荷存储膜和控制栅电极中的至少一个包含硅，氮化硅层位于第二绝缘膜和电荷存储膜和控制栅电极中的至少一个之间。
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公开(公告)号：US20060278940A1
公开(公告)日：2006-12-14
申请号：US11287192
申请日：2005-11-28
申请人： Koichi Kato , Daisuke Matsushita , Koichi Muraoka , Yasushi Nakasaki , Yuichiro Mitani , Nobutoshi Aoki
发明人： Koichi Kato , Daisuke Matsushita , Koichi Muraoka , Yasushi Nakasaki , Yuichiro Mitani , Nobutoshi Aoki
IPC分类号： H01L29/94
CPC分类号： H01L29/16 , H01L21/28176 , H01L21/28185 , H01L29/518
摘要： A semiconductor device includes a semiconductor substrate; an insulation film provided on the semiconductor substrate; and an electrode provided on the insulation film, and containing boron and a semiconductor material, wherein at least one element of the group V and carbon is introduced into an interface between the insulation film and the electrode.
摘要翻译： 半导体器件包括半导体衬底; 设置在所述半导体基板上的绝缘膜; 以及设置在所述绝缘膜上并且含有硼和半导体材料的电极，其中所述V族和碳族中的至少一种元素被引入到所述绝缘膜和所述电极之间的界面中。
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9.发明授权公开(公告)号：US07586163B2
公开(公告)日：2009-09-08
申请号：US11287192
申请日：2005-11-28
申请人： Koichi Kato , Daisuke Matsushita , Koichi Muraoka , Yasushi Nakasaki , Yuichiro Mitani , Nobutoshi Aoki
发明人： Koichi Kato , Daisuke Matsushita , Koichi Muraoka , Yasushi Nakasaki , Yuichiro Mitani , Nobutoshi Aoki
IPC分类号： H01L29/76
CPC分类号： H01L29/16 , H01L21/28176 , H01L21/28185 , H01L29/518
摘要： A semiconductor device includes a semiconductor substrate; an insulation film provided on the semiconductor substrate; and an electrode provided on the insulation film, and containing boron and a semiconductor material, wherein at least one element of the group V and carbon is introduced into an interface between the insulation film and the electrode.
摘要翻译： 半导体器件包括半导体衬底; 设置在所述半导体基板上的绝缘膜; 以及设置在所述绝缘膜上并且含有硼和半导体材料的电极，其中所述V族和碳族中的至少一种元素被引入到所述绝缘膜和所述电极之间的界面中。
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公开(公告)号：US20080305647A1
公开(公告)日：2008-12-11
申请号：US11547691
申请日：2006-08-28
IPC分类号： H01L21/469
CPC分类号： H01L27/11568 , C23C8/02 , C23C8/24 , C23C8/80 , H01L21/2652 , H01L21/28202 , H01L21/28238 , H01L21/28273 , H01L21/3144 , H01L21/3145 , H01L21/3185 , H01L27/115 , H01L27/11521 , H01L29/105 , H01L29/513
摘要： It is made possible to restrain generation of defects at the time of insulating film formation. A method for manufacturing a semiconductor device, includes: placing a semiconductor substrate into an atmosphere, thereby forming a nitride film on a surface of the semiconductor substrate, the atmosphere containing a first nitriding gas nitriding the surface of the semiconductor substrate and a first diluent gas not actually reacting with the semiconductor substrate, the ratio of the sum of the partial pressure of the first diluent gas and the partial pressure of the first nitriding gas to the partial pressure of the first nitriding gas being 5 or higher, and the total pressure of the atmosphere being 40 Torr or lower.
摘要翻译： 可以抑制成膜时的缺陷的产生。 一种制造半导体器件的方法，包括：将半导体衬底放置在大气中，从而在所述半导体衬底的表面上形成氮化物膜，所述气氛包含氮化所述半导体衬底的表面的第一氮化气体和第一稀释气体 实际上不与半导体衬底反应，第一稀释气体的分压和第一氮化气体的分压与第一氮化气体的分压之和的比率为5以上， 气氛为40乇或更低。
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