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    Plasma doping device with gate shutter
    1.
    发明授权
    Plasma doping device with gate shutter 失效
    带闸门的等离子体掺杂装置

    公开(公告)号：US08257501B2

    公开(公告)日：2012-09-04

    申请号：US11887323

    申请日：2006-03-29

    申请人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno ,  Hiroyuki Ito ,  Ichiro Nakayama ,  Cheng-Guo Jin

    发明人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno ,  Hiroyuki Ito ,  Ichiro Nakayama ,  Cheng-Guo Jin

    IPC分类号： C23C16/00

    CPC分类号： H01L21/2236 ,  H01J37/321 ,  H01J37/32412 ,  H01J37/32458 ,  H01J37/32623 ,  H01J37/32633

    摘要： In a plasma doping device according to the invention, a vacuum chamber (1) is evacuated with a turbo-molecular pump (3) as an exhaust device via a exhaust port 11 while a predetermined gas is being introduced from a gas supply device (2) in order to maintain the inside of the vacuum chamber (1) to a predetermined pressure with a pressure regulating valve (4). A high-frequency power of 13.56 MHz is supplied by a high-frequency power source (5) to a coil (8) provided in the vicinity of a dielectric window (7) opposed to a sample electrode (6) to generate inductive-coupling plasma in the vacuum chamber (1). A high-frequency power source (10) for supplying a high-frequency power to the sample electrode (6) is provided. Uniformity of processing is enhanced by driving a gate shutter (18) and covering a through gate (16).

    摘要翻译： 在根据本发明的等离子体掺杂装置中，在从气体供应装置（2）引入预定气体的同时，通过排气口11将真空室（1）作为排气装置用涡轮分子泵（3）抽真空 ），以便通过压力调节阀（4）将真空室（1）的内部保持在预定压力。 高频电源（5）将13.56MHz的高频功率提供给设置在与样品电极（6）相对的电介质窗口（7）附近的线圈（8），以产生电感耦合 真空室（1）中的等离子体。 提供了用于向样品电极（6）提供高频电力的高频电源（10）。 通过驱动闸门（18）并覆盖通过门（16）来增强处理的均匀性。

    Method and apparatus for plasma processing
    3.
    发明授权
    Method and apparatus for plasma processing 失效
    等离子体处理方法和装置

    公开(公告)号：US07601619B2

    公开(公告)日：2009-10-13

    申请号：US11887821

    申请日：2006-04-04

    申请人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

    发明人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

    IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/42 ,  H01J37/32 ,  C23F4/00

    CPC分类号： H01J37/32935 ,  H01J37/321 ,  H01J37/32412

    摘要： A method and an apparatus for plasma processing which can accurately monitor an ion current applied to the surface of a sample. Predetermined gas is exhausted via an exhaust port by a turbo-molecular pump while introducing the gas within the vacuum chamber from a gas supply device, and the pressure within the vacuum chamber is kept at a predetermined value by a pressure regulating valve. A high-frequency power supply for a plasma source supplies a high-frequency power to a coil provided near a dielectric window to generate inductively coupled plasma within the vacuum chamber. A high-frequency power supply for the sample electrode for supplying the high-frequency power to the sample electrode is provided. A matching circuit for the sample electrode and a high-frequency sensor are provided between the sample electrode high-frequency power supply and the sample electrode. An ion current applied to the surface of a sample can be accurately monitored buy using the high-frequency sensor and an arithmetic device.

    摘要翻译： 一种用于等离子体处理的方法和装置，其可以精确地监测施加到样品表面的离子电流。 通过涡轮分子泵通过排气口排出预定气体，同时从气体供给装置引入真空室内的气体，并通过压力调节阀将真空室内的压力保持在预定值。 用于等离子体源的高频电源为设置在电介质窗附近的线圈提供高频电力，以在真空室内产生电感耦合等离子体。 提供了用于向样品电极提供高频电力的样品电极的高频电源。 在样品电极高频电源和样品电极之间设置用于样品电极和高频传感器的匹配电路。 使用高频传感器和运算装置，可以精确地监视施加到样品表面的离子电流。

    PLASMA DOPING METHOD AND APPARATUS
    5.
    发明申请
    PLASMA DOPING METHOD AND APPARATUS 审中-公开
    等离子喷涂方法和装置

    公开(公告)号：US20120186519A1

    公开(公告)日：2012-07-26

    申请号：US13358277

    申请日：2012-01-25

    申请人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

    发明人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

    IPC分类号： C23C16/50

    CPC分类号： H01L21/2236 ,  H01J37/321 ,  H01J37/32412 ,  H01J2237/2001

    摘要： A plasma doping method and apparatus in which a prescribed gas is introduced into a vacuum container while being exhausted by a turbomolecular pump as an exhaust apparatus. The pressure in the vacuum container is kept at a prescribed value by a pressure regulating valve. High-frequency electric power of 13.56 MHz is supplied to a coil disposed close to a dielectric window which is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.

    摘要翻译： 一种等离子体掺杂方法和装置，其中将预定气体通过作为排气装置的涡轮分子泵排出而被引入真空容器中。 通过压力调节阀将真空容器内的压力保持在规定值。 将13.56MHz的高频电力供给到与样品电极相对的电介质窗附近设置的线圈，由此在真空容器内产生感应耦合等离子体。 每当处理规定数量的样品时，将虚拟样品进行等离子体掺杂，然后进行加热。 控制处理样品的条件使得表面薄层电阻的测量值等于规定值，从而可以提高杂质浓度的可控性。

    Plasma Doping Method and Apparatus
    6.
    发明申请
    Plasma Doping Method and Apparatus 审中-公开
    等离子体掺杂法和装置

    公开(公告)号：US20090233383A1

    公开(公告)日：2009-09-17

    申请号：US11884924

    申请日：2006-02-14

    申请人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

    发明人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

    IPC分类号： H01L21/66 ,  B05C11/00

    CPC分类号： H01L21/2236 ,  H01J37/321 ,  H01J37/32412 ,  H01J2237/2001

    摘要： It is intended to provide a plasma doping method and apparatus which are superior in the controllability of the concentration of an impurity that is introduced into a surface layer of a sample.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.

    摘要翻译： 旨在提供一种等离子体掺杂方法和装置，该等离子体掺杂方法和装置在引入样品的表面层中的杂质的浓度的可控性方面是优异的。 将规定的气体从作为排气装置的涡轮分子泵3排出而从气体供给装置2引入真空容器1。 真空容器1中的压力通过压力调节阀4保持在规定值。13.56MHz的高频电力从高频电源5供给到靠近电介质窗7设置的线圈8， 与样品电极6相对，从而在真空容器1中产生感应耦合等离子体。提供了用于向样品电极6提供高频电力的高频电源10。 每当处理规定数量的样品时，将虚拟样品进行等离子体掺杂，然后进行加热。 控制处理样品的条件使得表面薄层电阻的测量值等于规定值，从而可以提高杂质浓度的可控性。

    Method of Introducing Impurity
    7.
    发明申请
    Method of Introducing Impurity 审中-公开
    引入杂质的方法

    公开(公告)号：US20080194086A1

    公开(公告)日：2008-08-14

    申请号：US11628454

    申请日：2005-05-31

    申请人： Yuichiro Sasaki ,  Bunji Mizuno ,  Katsumi Okashita ,  Cheng-Guo Jin ,  Hiroyuki Ito

    发明人： Yuichiro Sasaki ,  Bunji Mizuno ,  Katsumi Okashita ,  Cheng-Guo Jin ,  Hiroyuki Ito

    IPC分类号： H01L21/26 ,  H01L21/265

    CPC分类号： H01L21/2236 ,  H01J37/32412

    摘要： There is provided a method of introducing impurity capable of efficiently realizing a shallow impurity introduction. The impurity introducing method includes a first step of making a surface of a semiconductor layer to be amorphous by reacting plasma composed of particles which are electrically inactive in the semiconductor layer to a surface of a solid base body including the semiconductor layer, and a second step of introducing impurity to the surface of the solid base body.After performing the first step, by performing the second step, an amorphous layer with fine pores is formed on the surface of the solid base body including the semiconductor layer, and impurity are introduced in the amorphous layer to form an impurity introducing layer.

    摘要翻译： 提供了能够有效地实现浅杂质导入的杂质的引入方法。 杂质导入方法包括：第一步骤，通过将由半导体层中的电惰性的粒子构成的等离子体与包含该半导体层的固体基体的表面反应，使半导体层的表面成为无定形，第二工序 将杂质引入固体基体的表面。 进行第一工序后，通过进行第二工序，在包含半导体层的固体基体的表面上形成具有细孔的非晶质层，在非晶层中引入杂质，形成杂质导入层。

    PLASMA DOPING METHOD WITH GATE SHUTTER
    9.
    发明申请
    PLASMA DOPING METHOD WITH GATE SHUTTER 失效
    等离子切割方法与门开关

    公开(公告)号：US20120285818A1

    公开(公告)日：2012-11-15

    申请号：US13560648

    申请日：2012-07-27

    申请人： Tomohiro OKUMURA ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno ,  Hiroyuki Ito ,  Ichiro Nakayama ,  Cheng-Guo Jin

    发明人： Tomohiro OKUMURA ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno ,  Hiroyuki Ito ,  Ichiro Nakayama ,  Cheng-Guo Jin

    IPC分类号： C23C14/34

    CPC分类号： H01L21/2236 ,  H01J37/321 ,  H01J37/32412 ,  H01J37/32458 ,  H01J37/32623 ,  H01J37/32633

    摘要： In a plasma doping device according to the invention, a vacuum chamber is evacuated with a turbo-molecular pump as an exhaust device via a exhaust port while a predetermined gas is being introduced from a gas supply device in order to maintain the inside of the vacuum chamber to a predetermined pressure with a pressure regulating valve. A high-frequency power of 13.56 MHz is supplied by a high-frequency power source to a coil provided in the vicinity of a dielectric window opposed to a sample electrode to generate inductive-coupling plasma in the vacuum chamber. A high-frequency power source for supplying a high-frequency power to the sample electrode is provided. Uniformity of processing is enhanced by driving a gate shutter and covering a through gate.

    摘要翻译： 在根据本发明的等离子体掺杂装置中，在从气体供给装置引入预定气体的同时，通过排气口将涡轮分子泵作为排气装置抽真空室，以保持真空内部 通过压力调节阀到达预定压力。 13.56MHz的高频功率由高频电源提供给设置在与样品电极相对的电介质窗口附近的线圈，以在真空室中产生电感耦合等离子体。 提供了用于向样品电极提供高频电力的高频电源。 通过驱动闸门并覆盖通过门来增强处理的均匀性。

    Plasma doping method and apparatus
    10.
    发明授权
    Plasma doping method and apparatus 失效
    等离子体掺杂方法和装置

    公开(公告)号：US08129202B2

    公开(公告)日：2012-03-06

    申请号：US12648142

    申请日：2009-12-28

    申请人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

    发明人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

    IPC分类号： H01L21/00

    CPC分类号： H01L21/2236 ,  H01J37/321 ,  H01J37/32412 ,  H01J2237/2001

    摘要： It is intended to provide a plasma doping method and apparatus which are superior in the controllability of the concentration of an impurity that is introduced into a surface layer of a sample.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.

    摘要翻译： 旨在提供一种等离子体掺杂方法和装置，该等离子体掺杂方法和装置在引入样品的表面层中的杂质的浓度的可控性方面是优异的。 将规定的气体从作为排气装置的涡轮分子泵3排出而从气体供给装置2引入真空容器1。 真空容器1中的压力通过压力调节阀4保持在规定值。13.56MHz的高频电力从高频电源5供给到靠近电介质窗7设置的线圈8， 与样品电极6相对，从而在真空容器1中产生感应耦合等离子体。提供了用于向样品电极6提供高频电力的高频电源10。 每当处理规定数量的样品时，将虚拟样品进行等离子体掺杂，然后进行加热。 控制处理样品的条件使得表面薄层电阻的测量值等于规定值，从而可以提高杂质浓度的可控性。