公开(公告)号：US20120155171A1

公开(公告)日：2012-06-21

申请号：US13242958

申请日：2011-09-23

申请人： Yuji KOMINE ,  Tokumasa Hara

发明人： Yuji KOMINE ,  Tokumasa Hara

IPC分类号： G11C14/00

CPC分类号： G11C5/143 ,  G11C7/20 ,  G11C16/0483

摘要： According to one embodiment, a memory system includes a nonvolatile first memory configured to store a boot program, a volatile second memory, a detection circuit configured to detect a level of a power supply voltage, and to generates an interrupt when the power supply voltage becomes less than a first level, and a state machine configured to execute a sequence including a first read operation for reading the boot program from the first memory and a transfer operation for transferring the read boot program to the second memory at power-on. The state machine includes a waiting state for waiting until the interrupt is deactivated when the interrupt is activated during the first read operation or the transfer operation.

摘要翻译： 根据一个实施例，存储器系统包括被配置为存储引导程序的非易失性第一存储器，易失性第二存储器，被配置为检测电源电压电平的检测电路，并且当电源电压变为 小于第一级，以及状态机，被配置为执行包括从第一存储器读取引导程序的第一读取操作的序列和用于在开机时将读取的引导程序传送到第二存储器的传送操作。 状态机包括等待状态，等待中断在第一次读取操作或传输操作期间中断被激活时被停用。

公开(公告)号：US20090129156A1

公开(公告)日：2009-05-21

申请号：US12273813

申请日：2008-11-19

申请人： Yuji KOMINE ,  Shinya Fujisawa ,  Yasuhiko Honda ,  Ryu Hondai ,  Takamichi Kasai ,  Takahiro Suzuki

发明人： Yuji KOMINE ,  Shinya Fujisawa ,  Yasuhiko Honda ,  Ryu Hondai ,  Takamichi Kasai ,  Takahiro Suzuki

IPC分类号： G11C16/06 ,  G11C11/34 ,  G11C7/10

CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C15/046 ,  G11C16/344 ,  G11C16/3445 ,  G11C16/3454 ,  G11C16/3459

摘要： A non-volatile semiconductor storage device includes a memory cell array having a plurality of non-volatile memory cells, an address search circuit which searches for write object data and outputs an address where the write object data is present, when writing data into the non-volatile memory cells, and a control circuit which exercises control to write the write object data into the non-volatile memory cells in accordance with the address output from the address search circuit.

摘要翻译： 非易失性半导体存储装置包括具有多个非易失性存储单元的存储单元阵列，地址搜索电路，当将数据写入非易失性存储单元时，搜索写入对象数据并输出存在写入对象数据的地址 并且控制电路根据从地址搜索电路输出的地址进行控制以将写入目标数据写入非易失性存储单元。