公开(公告)号：US07872254B2

公开(公告)日：2011-01-18

申请号：US11687767

申请日：2007-03-19

申请人： Yuji Suwa ,  Tomihiro Hashizume ,  Masaaki Fujimori

发明人： Yuji Suwa ,  Tomihiro Hashizume ,  Masaaki Fujimori

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

CPC分类号： H01L51/0021 ,  H01B1/02 ,  H01B1/16 ,  H01L51/0545 ,  H01L51/105 ,  H05K1/097 ,  H05K3/105

摘要： An organic transistor is formed with a low material cost and low manufacturing cost while still providing high performance and a low contact resistance with an organic semiconductor of the transistor. The organic transistor has electrodes whose bodies are formed mainly of an inexpensive first metal and whose surfaces are formed of a second metal that is expensive but provides high performance properties. To obtain stability of this structure with a low cost, a property of the second metal is used in which the second metal is easily segregated on the surface of the first metal in an alloy of the first metal and the second metal.

摘要翻译： 有机晶体管以低的材料成本和低的制造成本形成，同时仍然提供与晶体管的有机半导体的高性能和低接触电阻。 有机晶体管具有主体由廉价的第一金属形成并且其表面由昂贵但提供高性能的第二金属形成的电极。 为了以低成本获得该结构的稳定性，使用第二金属的属性，其中第二金属在第一金属和第二金属的合金中容易地偏析在第一金属的表面上。

公开(公告)号：US20070275500A1

公开(公告)日：2007-11-29

申请号：US11687767

申请日：2007-03-19

申请人： Yuji Suwa ,  Tomihiro Hashizume ,  Masaaki Fujimori

发明人： Yuji Suwa ,  Tomihiro Hashizume ,  Masaaki Fujimori

IPC分类号： H01L51/00 ,  H01B7/22

CPC分类号： H01L51/0021 ,  H01B1/02 ,  H01B1/16 ,  H01L51/0545 ,  H01L51/105 ,  H05K1/097 ,  H05K3/105

摘要： If an organic transistor is formed by printing with a low cost, there are problems in that an inexpensive electrode material has a high contact resistance with a semiconductor, and an expensive electrode material has a low contact resistance. To solve the problems, the present invention provides an organic transistor and a method of forming the same, the organic transistor being formed with a low material cost and low manufacturing cost and providing a low contact resistance with a semiconductor and high performance.The organic transistor has electrodes whose bodies are formed mainly of an inexpensive first metal and whose surfaces are formed of a second metal that is expensive but provides high performance properties. To obtain stability of this structure with a low cost, the present invention uses a property of the second metal, in which the second metal is easily segregated on the surface of the first metal in an alloy of the first metal and the second metal.

摘要翻译： 如果通过低成本的印刷形成有机晶体管，则存在廉价的电极材料与半导体具有高接触电阻并且昂贵的电极材料具有低接触电阻的问题。 为了解决这些问题，本发明提供了一种有机晶体管及其形成方法，有机晶体管以低成本和低制造成本形成，并且具有半导体的低接触电阻和高性能。 有机晶体管具有主体由廉价的第一金属形成并且其表面由昂贵但提供高性能的第二金属形成的电极。 为了以低成本获得该结构的稳定性，本发明使用第二金属的特性，其中第二金属在第一金属和第二金属的合金中容易地偏析在第一金属的表面上。

公开(公告)号：US20080012009A1

公开(公告)日：2008-01-17

申请号：US11685958

申请日：2007-03-14

申请人： Tomihiro Hashizume ,  Masaaki Fujimori ,  Yuji Suwa ,  Tadashi Arai

发明人： Tomihiro Hashizume ,  Masaaki Fujimori ,  Yuji Suwa ,  Tadashi Arai

IPC分类号： H01L51/10 ,  H01L51/40

CPC分类号： H01L51/0021 ,  H01L51/0545 ,  H01L51/105

摘要： A method for determining the combination of the electrode and organic semiconductor with improved electron injection efficiency and hole injection efficiency in an organic TFT is provided, two types of FETS, that is, an n channel FET and a p channel FET are realized, and further, a complementary TFT (CTFT) is provided. The method for obtaining the vacuum level shift at the electrode metal/organic semiconductor interface from physical constants of constituent elements of the electrode and the organic semiconductor is provided. By changing the electrode metal through an electrochemical method, the electrodes whose electron injection and hole injection can be controlled are formed. By using these electrodes, two types of FETs such as an n channel FET and a p channel FET are realized, thereby providing a complementary TFT (CTFT).

摘要翻译： 提供了一种用于确定电极和有机半导体在有机TFT中具有改进的电子注入效率和空穴注入效率的组合的方法，实现了两种类型的FETS，即n沟道FET和ap沟道FET，此外， 提供互补TFT（CTFT）。 提供了从电极和有机半导体的构成元件的物理常数获得电极金属/有机半导体界面处的真空电平移动的方法。 通过电化学方法改变​​电极金属，可以形成电子注入和空穴注入的电极。 通过使用这些电极，实现了诸如n沟道FET和p沟道FET的两种类型的FET，从而提供互补TFT（CTFT）。

公开(公告)号：US07872257B2

公开(公告)日：2011-01-18

申请号：US12128993

申请日：2008-05-29

申请人： Tomihiro Hashizume ,  Yuji Suwa ,  Masaaki Fujimori ,  Tadashi Arai ,  Takeo Shiba

发明人： Tomihiro Hashizume ,  Yuji Suwa ,  Masaaki Fujimori ,  Tadashi Arai ,  Takeo Shiba

IPC分类号： H01L51/30 ,  H01L21/70

CPC分类号： H01L27/283 ,  H01L51/0003 ,  H01L51/0018 ,  H01L51/0021

摘要： An n-type TFT and a p-type TFT are realized by selectively changing only a cover coat without changing a TFT material using an equation for applying the magnitude of a difference in the Fermi energy between an interface of semiconductor and an electrode and between an interface of semiconductor and insulator. At this time, in order to configure a predetermined circuit, the process is performed, as a source electrode and a drain electrode of the p-type TFT and a source electrode and a drain electrode of the n-type TFT being connected all, respectively, and an unnecessary interconnection is cut by irradiating light using a scanning laser exposure apparatus or the like.

摘要翻译： 通过使用用于施加半导体和电极的界面和电极之间的费米能量的差异的大小的方程式，仅选择性地改变覆盖涂层而不改变TFT材料来实现n型TFT和p型TFT 半导体和绝缘体的界面。 此时，为了构成规定的电路，作为p型TFT的源电极和漏电极，n型TFT的源电极和漏极全部分别连接，进行该处理 并且通过使用扫描激光曝光装置等照射光而切断不必要的互连。

公开(公告)号：US20080315191A1

公开(公告)日：2008-12-25

申请号：US12128993

申请日：2008-05-29

申请人： Tomihiro Hashizume ,  Yuji Suwa ,  Masaaki Fujimori ,  Tadashi Arai ,  Takeo Shiba

发明人： Tomihiro Hashizume ,  Yuji Suwa ,  Masaaki Fujimori ,  Tadashi Arai ,  Takeo Shiba

IPC分类号： H01L51/30 ,  H01L21/70

CPC分类号： H01L27/283 ,  H01L51/0003 ,  H01L51/0018 ,  H01L51/0021

摘要： An n-type TFT and a p-type TFT are realized by selectively changing only a cover coat without changing a TFT material using an equation for applying the magnitude of a difference in the Fermi energy between an interface of semiconductor and an electrode and between an interface of semiconductor and insulator. At this time, in order to configure a predetermined circuit, the process is performed, as a source electrode and a drain electrode of the p-type TFT and a source electrode and a drain electrode of the n-type TFT being connected all, respectively, and an unnecessary interconnection is cut by irradiating light using a scanning laser exposure apparatus or the like.

摘要翻译： 通过使用用于施加半导体和电极的界面和电极之间的费米能量的差异的大小的方程式，仅选择性地改变覆盖涂层而不改变TFT材料来实现n型TFT和p型TFT 半导体和绝缘体的界面。 此时，为了构成规定的电路，作为p型TFT的源电极和漏电极，n型TFT的源电极和漏极全部分别连接，进行该处理 并且通过使用扫描激光曝光装置等照射光而切断不必要的互连。

公开(公告)号：US06780698B2

公开(公告)日：2004-08-24

申请号：US10194253

申请日：2002-07-15

申请人： Yuji Suwa ,  Tomihiro Hashizume ,  Ken Yamaguchi ,  Masaaki Fujimori

发明人： Yuji Suwa ,  Tomihiro Hashizume ,  Ken Yamaguchi ,  Masaaki Fujimori

IPC分类号： H01L218238

CPC分类号： H01L29/66537 ,  H01L21/3003 ,  H01L21/823807 ,  H01L29/1083 ,  H01L29/66545 ,  H01L29/66621 ,  H01L29/7834

摘要： A method for producing a semiconductor device which comprises causing a dopant present in a semiconductor substrate to segregate in the surface of said semiconductor substrate, thereby forming a thin layer which has a higher dopant concentration than said substrate. The thin layer formed by segregation prevents punch-through which occurs as the result of miniaturization of MOSFET. This method permits economical delta doping without sacrificing the device characteristics.

摘要翻译： 一种制造半导体器件的方法，包括使存在于半导体衬底中的掺杂剂在所述半导体衬底的表面中分离，从而形成具有比所述衬底更高掺杂剂浓度的薄层。 通过偏析形成的薄层防止由于MOSFET的小型化而发生的穿通。 该方法允许经济的δ掺杂，而不牺牲器件特性。

公开(公告)号：US08008654B2

公开(公告)日：2011-08-30

申请号：US12155801

申请日：2008-06-10

申请人： Takeo Shiba ,  Tomihiro Hashizume ,  Yuji Suwa ,  Tadashi Arai

发明人： Takeo Shiba ,  Tomihiro Hashizume ,  Yuji Suwa ,  Tadashi Arai

IPC分类号： H01L51/00

CPC分类号： H01L51/0012 ,  H01L27/283 ,  H01L51/0004 ,  H01L51/0022 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/105

摘要： A method of manufacturing a thin-film transistor device improves performance of a complementary TFT circuit incorporated in a thin- and light-weighted image display device or a flexible electronic device, and reduces power consumption manufacturing cost. Electrodes forming n-type and p-type TFTs and an organic semiconductor are made of the same material in both types of TFT by a solution-process and/or printable process method. A first polarizable thin-film is formed on an interface between a gate insulator and a semiconductor, and a second polarizable thin film provided on an interface between source and drain electrodes and the semiconductor film. A complementary thin-film transistor device is manufactured by selectively exposing either the n-type TFT area or the p-type TFT area to light to remove the polarizing function from the first and second polarizable thin films.

摘要翻译： 薄膜晶体管器件的制造方法提高了结合在薄型和轻型图像显示器件或柔性电子器件中的互补TFT电路的性能，并降低了功耗制造成本。 形成n型和p型TFT的电极和有机半导体通过溶液处理和/或可印刷的方法在两种类型的TFT中由相同的材料制成。 第一可极化薄膜形成在栅极绝缘体和半导体之间的界面上，第二可极化薄膜设置在源电极和漏电极与半导体膜之间的界面上。 通过将n型TFT区域或p型TFT区域选择性地暴露于光以从第一和第二可极化薄膜去除偏振功能来制造互补薄膜晶体管器件。

公开(公告)号：US20080087883A1

公开(公告)日：2008-04-17

申请号：US11865769

申请日：2007-10-02

申请人： YUJI SUWA ,  Tomihiro Hashizume ,  Masahiko Ando ,  Takeo Shiba

发明人： YUJI SUWA ,  Tomihiro Hashizume ,  Masahiko Ando ,  Takeo Shiba

IPC分类号： H01L51/10 ,  H01L51/30

CPC分类号： H01L51/105 ,  H01L51/0545

摘要： Disclosed are a method for inexpensively reducing the contact resistance between an electrode and an organic semiconductor upon a p-type operation of the organic semiconductor; and a method for inexpensively operating, as an n-type semiconductor, an organic semiconductor that is likely to work as a p-type semiconductor. In addition, also disclosed are a p-cannel FET, an n-channel FET, and a C-TFT which can be fabricated inexpensively. Specifically, a p-type region and an n-type region is inexpensively prepared on one substrate by arranging an organic semiconductor that is likely to work as a p-type semiconductor in a p-channel FET region and an n-channel FET region of a C-TFT; and arranging a self-assembled monolayer between an electrode and the organic semiconductor in the n-channel FET region, which self-assembled monolayer is capable of allowing the organic semiconductor to work as an n-type semiconductor.

摘要翻译： 公开了一种在有机半导体的p型操作时廉价地降低电极和有机半导体之间的接触电阻的方法; 以及作为n型半导体廉价地操作有可能用作p型半导体的有机半导体的方法。 此外，还公开了可以廉价制造的p型FET，n沟道FET和C-TFT。 具体地说，在一个衬底上廉价地制备p型区域和n型区域，通过在p沟道FET区域和n沟道FET区域中配置可能作为p型半导体的有机半导体， 一个C-TFT; 并且在n沟道FET区域中的电极和有机半导体之间布置自组装单层，该自组装单层能够使有机半导体作为n型半导体工作。

公开(公告)号：US20090001361A1

公开(公告)日：2009-01-01

申请号：US12155801

申请日：2008-06-10

申请人： Takeo Shiba ,  Tomihiro Hashizume ,  Yuji Suwa ,  Tadashi Arai

发明人： Takeo Shiba ,  Tomihiro Hashizume ,  Yuji Suwa ,  Tadashi Arai

IPC分类号： H01L51/00 ,  H01L51/40

CPC分类号： H01L51/0012 ,  H01L27/283 ,  H01L51/0004 ,  H01L51/0022 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/105

摘要： The present invention provides a method of manufacturing a thin-film transistor device. This method enables improvement in performance of a complementary TFT circuit incorporated in a thin- and light-weighted image display device or a flexible electronic device and also enables reduction of power consumption and reduction of manufacturing cost of the circuit. Further in the method, the number of manufacturing steps is decreased so that mass production and growth in size of thin film transistor devices are facilitated through a printing technique. In this method, electrodes forming n-type and p-type TFT and an organic semiconductor are made of the same material in both types of TFT by the solution-process and/or printable process method. A first polarizable thin-film 7 is formed on an interface between a gate insulator and a semiconductor, and also a second polarizable thin film 8 provided on an interface between source and drain electrodes 5 and a semiconductor film 9. A complementary thin-film transistor device is manufactured by selectively exposing either the n-type TFT area or the p-type TFT area to light to remove the polarizing function from the first and second polarizable thin films in the area.

摘要翻译： 本发明提供一种制造薄膜晶体管器件的方法。 该方法能够提高并入薄型和轻型图像显示装置或柔性电子装置中的互补TFT电路的性能，并且还能够降低功耗并降低电路的制造成本。 此外，在该方法中，制造步骤的数量减少，从而通过印刷技术促进了薄膜晶体管器件的大规模生产和尺寸增长。 在这种方法中，通过溶液处理和/或可印刷的方法，形成n型和p型TFT的电极和有机半导体由两种类型的TFT由相同的材料制成。 第一可极化薄膜7形成在栅极绝缘体和半导体之间的界面上，以及设置在源电极和漏电极5与半导体膜9之间的界面上的第二可极化薄膜8.互补薄膜晶体管 通过将n型TFT区域或p型TFT区域选择性地暴露于光以从该区域中的第一和第二可极化薄膜去除偏振功能来制造器件。

公开(公告)号：US06475650B2

公开(公告)日：2002-11-05

申请号：US09961292

申请日：2001-09-25

申请人： Satoshi Watanabe ,  Toshiyuki Onogi ,  Masahiko Ichimura ,  Yoshimasa Ono ,  Tomihiro Hashizume ,  Yasuo Wada ,  Yuji Suwa

发明人： Satoshi Watanabe ,  Toshiyuki Onogi ,  Masahiko Ichimura ,  Yoshimasa Ono ,  Tomihiro Hashizume ,  Yasuo Wada ,  Yuji Suwa

IPC分类号： G11B539

CPC分类号： B82Y30/00 ,  B82B1/00 ,  B82B3/00 ,  B82Y15/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/00 ,  G11B5/3945 ,  G11B5/3961 ,  G11B5/3967 ,  G11B5/49 ,  G11B5/4984 ,  G11B2005/0005 ,  H01F1/0036 ,  H01F1/0302 ,  Y10S428/90 ,  Y10T428/1136 ,  Y10T428/1193 ,  Y10T428/32

摘要： A ferromagnetic material can be formed in a very small size on the order of an atomic size and is capable of being stably magnetized. The ferromagnetic material comprises basic unit structures each consisting of a first atom (11), a second atom (12) of the same kind as the first atom (11), and a third atom (or atomic group) (13) of the same kind as the first atom (11) or of a kind different from that of the first atom (11). In each of the basic unit structures, the atoms are arranged on a surface of a substrate so that a chemical bond (14) is formed between the first atom or molecule and the third atom or molecule, a chemical bond (14) is formed between the second atom or molecule and the third atom or molecule, and a chemical bond or an electron path (15) not passing the third atom is formed between the first and the second atom or molecule, wherein said third atoms or molecules consist of As atoms.

摘要翻译： 铁磁材料可以以原子尺寸的数量级的非常小的尺寸形成，并且能够被稳定地磁化。 铁磁材料包括各自由与第一原子（11）相同类型的第一原子（11），第二原子（12）和与第一原子（11）相同种类的第二原子（12）和其第三原子（或原子团）（13）组成的基本单元结构 作为第一原子（11）或与第一原子（11）不同的一种。 在每个基本单元结构中，原子布置在基板的表面上，使得在第一原子或分子与第三原子或分子之间形成化学键（14），在第一原子或分子与第三原子或分子之间形成化学键（14）， 在第一和第二原子或分子之间形成第二原子或分子和第三原子或分子，以及不通过第三原子的化学键或电子通路（15），其中所述第三原子或分子由As原子 。