公开(公告)号：US08148720B2

公开(公告)日：2012-04-03

申请号：US12516071

申请日：2007-11-15

申请人： Masatoshi Saito ,  Yuki Nakano ,  Hiroaki Nakamura

发明人： Masatoshi Saito ,  Yuki Nakano ,  Hiroaki Nakamura

IPC分类号： H01L29/08

CPC分类号： H01L51/0074 ,  C09K9/02 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1029 ,  C09K2211/1037 ,  C09K2211/1044 ,  H01L51/0022 ,  H01L51/005 ,  H01L51/0058 ,  H01L51/0068 ,  H01L51/0072 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105 ,  H01L51/5203 ,  H01L51/5296 ,  H05B33/14

摘要： An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a specified organic compound having an acetylene or olefin structure in the center thereof; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed and has a large ON/OFF ratio, are provided.

摘要翻译： 一种有机薄膜晶体管，包括其上具有至少三个端子的基板，栅电极，源电极和漏电极，绝缘体层和有机半导体层，源极和漏极之间的电流在施加时被控制 对所述栅电极施加电压，其中所述有机半导体层在其中心包含具有乙炔或烯烃结构的特定有机化合物; 以及利用有机薄膜晶体管的有机薄膜发光晶体管，其中有机薄膜晶体管是利用在源极和漏极之间流动的电流获得发光的发光，并且在施加了发光时控制发光 提供对栅电极的电压，并且相对于响应速度变高并且具有大的ON / OFF比。

公开(公告)号：US20110180790A1

公开(公告)日：2011-07-28

申请号：US13060767

申请日：2009-08-14

申请人： Yuki Nakano ,  Masatoshi Saito ,  Hiroaki Nakamura ,  Hirofumi Kondo

发明人： Yuki Nakano ,  Masatoshi Saito ,  Hiroaki Nakamura ,  Hirofumi Kondo

IPC分类号： H01L51/30 ,  C07C13/66

CPC分类号： H01L51/0054 ,  C07C15/38 ,  C07C22/08 ,  C07C25/22 ,  C07C43/20 ,  C07C321/28 ,  C07C2603/48 ,  C07D333/08 ,  C07D333/54 ,  C07D409/10 ,  C07F7/0805 ,  H01L51/0094 ,  H01L51/0541 ,  H01L51/0545 ,  Y10S428/917

摘要： A compound for an organic thin film transistor having a structure represented by the following formula (1): wherein at least one of R1 to R6 is a substituent, and the remaining R1 to R6 are a hydrogen atom.

摘要翻译： 一种具有由下式（1）表示的结构的有机薄膜晶体管的化合物：其中R 1至R 6中的至少一个为取代基，其余的R 1至R 6为氢原子。

公开(公告)号：US20110031488A1

公开(公告)日：2011-02-10

申请号：US12936945

申请日：2009-04-02

申请人： Masatoshi Saito ,  Yuki Nakano ,  Hiroaki Nakamura

发明人： Masatoshi Saito ,  Yuki Nakano ,  Hiroaki Nakamura

IPC分类号： H01L51/10 ,  C07C13/62 ,  C07C13/66 ,  C07C13/573 ,  C07C22/08 ,  C07D333/78 ,  C07D495/04 ,  C07D495/14 ,  C07D513/04 ,  C07D493/04

CPC分类号： H01L51/0052 ,  C07C15/56 ,  C07C15/60 ,  C07C15/62 ,  C07C22/08 ,  C07C2603/24 ,  C07C2603/44 ,  C07C2603/52 ,  C07D333/76 ,  C07D493/04 ,  C07D495/04 ,  C07D495/14 ,  C07D513/04 ,  H01L51/0541 ,  H01L51/0545

摘要： A compound for an organic thin film transistor having a structure shown by the following formula (1): X1-L-Ar-L-X2   (1) wherein L is —C≡C—, or —CH═CH— in a trans configuration, X1 and X2 are independently an alkyl group having 2 to 30 carbon atoms or a haloalkyl group having 1 to 30 carbon atoms, and Ar is a substituted or unsubstituted aromatic hydrocarbon group having 14 to 60 ring carbon atoms which is a condensed ring of three or more rings, or a substituted or unsubstituted aromatic heterocyclic group having 11 to 60 ring atoms which is a condensed ring of three or more rings.

摘要翻译： 一种具有下式（1）所示结构的有机薄膜晶体管的化合物：其中L为-C≡C-的X1-L-Ar-L-X2（1）或反式 构型，X1和X2独立地为碳原子数为2〜30的烷基或碳原子数为1〜30的卤代烷基，Ar为取代或未取代的环碳原子数为14〜60的芳香族烃基， 三个以上环，或取代或未取代的环状原子数为11〜60的芳香族杂环基，是3个以上环的稠环。

公开(公告)号：US20100012929A1

公开(公告)日：2010-01-21

申请号：US12445146

申请日：2007-10-10

申请人： Yuki Nakano ,  Masatoshi Saito ,  Hiroaki Nakamura

发明人： Yuki Nakano ,  Masatoshi Saito ,  Hiroaki Nakamura

IPC分类号： H01L51/30

CPC分类号： H01L51/005 ,  C09B1/00 ,  C09B3/78 ,  C09B57/00 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1014 ,  C09K2211/1029 ,  C09K2211/1044 ,  C09K2211/1051 ,  C09K2211/1092 ,  H01L51/0022 ,  H01L51/0052 ,  H01L51/0058 ,  H01L51/0074 ,  H01L51/0512 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/102 ,  H01L51/52 ,  H01L51/5203 ,  H01L51/5296 ,  H05B33/14

摘要： An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a compound having a specified structure; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed (driving speed) and has a large ON/OFF ratio, are provided.

摘要翻译： 一种有机薄膜晶体管，包括其上具有至少三个端子的基板，栅电极，源电极和漏电极，绝缘体层和有机半导体层，源极和漏极之间的电流在施加时被控制 对栅电极施加的电压，其中所述有机半导体层包括具有特定结构的化合物; 以及利用有机薄膜晶体管的有机薄膜发光晶体管，其中有机薄膜晶体管是利用在源极和漏极之间流动的电流获得发光的发光，并且在施加了发光时控制发光 提供对栅电极的电压，并且相对于响应速度（驱动速度）变高并且具有大的ON / OFF比。

公开(公告)号：US08901540B2

公开(公告)日：2014-12-02

申请号：US13060779

申请日：2009-08-20

申请人： Masatoshi Saito ,  Yuki Nakano ,  Hiroaki Nakamura ,  Hirofumi Kondo

发明人： Masatoshi Saito ,  Yuki Nakano ,  Hiroaki Nakamura ,  Hirofumi Kondo

IPC分类号： H01L51/52 ,  C07F7/08 ,  C07C255/52 ,  C07C22/08 ,  C07C25/22 ,  C07C211/61 ,  C07C321/28 ,  C07C43/20 ,  C07D495/04 ,  C07D471/04 ,  H01L51/10 ,  H01L51/00 ,  C07C15/56 ,  C07C15/28 ,  C07C13/62 ,  H01L51/05

CPC分类号： C07D495/04 ,  C07C13/62 ,  C07C15/28 ,  C07C15/56 ,  C07C2603/52 ,  C07C2603/54 ,  H01L51/0055 ,  H01L51/0074 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558 ,  Y10S428/917

摘要： A compound for an organic thin film transistor having a structure represented by the following formula (1): wherein R1 and R2, and R3 and R4 are respectively combined with each other to form an aromatic hydrocarbon ring having 6 to 60 carbon atoms or an aromatic heterocyclic ring having 3 to 60 carbon atoms; the ring being fused to the ring to which the groups are bonded, whereby the structure of the formula (1) has 5 or more aromatic rings that are fused; and the fused rings formed by R1 and R2, and R3 and R4 each may have a substituent.

摘要翻译： 一种具有下式（1）所示结构的有机薄膜晶体管的化合物：其中R1和R2以及R3和R4分别相互结合形成具有6至60个碳原子的芳烃环或芳族 具有3至60个碳原子的杂环; 所述环与所述基团键合的环稠合，由此式（1）的结构具有5个或更多个稠合的芳环; 并且由R 1和R 2以及R 3和R 4形成的稠环各自可以具有取代基。

公开(公告)号：US08525156B2

公开(公告)日：2013-09-03

申请号：US12679634

申请日：2008-09-09

申请人： Hiroaki Nakamura ,  Yuki Nakano ,  Masatoshi Saito ,  Hirofumi Kondo

发明人： Hiroaki Nakamura ,  Yuki Nakano ,  Masatoshi Saito ,  Hirofumi Kondo

IPC分类号： H01L51/30

CPC分类号： B82Y10/00 ,  C08G2261/124 ,  C08G2261/222 ,  C08G2261/226 ,  C08G2261/314 ,  C08G2261/3162 ,  C08G2261/76 ,  C08G2261/92 ,  H01L51/0003 ,  H01L51/0012 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0562 ,  H01L51/5296 ,  H01L2251/552

摘要： An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon applying a voltage to the gate electrode, wherein a channel control layer including an amorphous organic compound having an ionization potential of less than 5.8 eV is provided between the organic semiconductor layer and the insulator layer, has excellent stability of a field-effect mobility and a high response speed even when stored at a high temperature.

摘要翻译： 一种有机薄膜晶体管，包括其上具有至少三个端子的基板，栅电极，源电极和漏电极，绝缘体层和有机半导体层，源极和漏极之间的电流被控制在施加 电压到栅电极，其中在有机半导体层和绝缘体层之间设置包含电离电位小于5.8eV的非晶有机化合物的沟道控制层，具有优异的场效应迁移率和高响应性的稳定性 即使在高温下储存时也是如此。

公开(公告)号：US20100283041A1

公开(公告)日：2010-11-11

申请号：US12679634

申请日：2008-09-09

申请人： Hiroaki Nakamura ,  Yuki Nakano ,  Masatoshi Saito ,  Hirofumi Kondo

发明人： Hiroaki Nakamura ,  Yuki Nakano ,  Masatoshi Saito ,  Hirofumi Kondo

IPC分类号： H01L51/30

CPC分类号： B82Y10/00 ,  C08G2261/124 ,  C08G2261/222 ,  C08G2261/226 ,  C08G2261/314 ,  C08G2261/3162 ,  C08G2261/76 ,  C08G2261/92 ,  H01L51/0003 ,  H01L51/0012 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0562 ,  H01L51/5296 ,  H01L2251/552

摘要： An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon applying a voltage to the gate electrode, wherein a channel control layer including an amorphous organic compound having an ionization potential of less than 5.8 eV is provided between the organic semiconductor layer and the insulator layer, has excellent stability of a field-effect mobility and a high response speed even when stored at a high temperature.

摘要翻译： 一种有机薄膜晶体管，包括其上具有至少三个端子的基板，栅电极，源电极和漏电极，绝缘体层和有机半导体层，源极和漏极之间的电流被控制在施加 电压到栅电极，其中在有机半导体层和绝缘体层之间设置包含电离电位小于5.8eV的非晶有机化合物的沟道控制层，具有优异的场效应迁移率和高响应性的稳定性 即使在高温下储存时也是如此。

公开(公告)号：US20100243993A1

公开(公告)日：2010-09-30

申请号：US12514958

申请日：2007-11-13

申请人： Masatoshi Saito ,  Yuki Nakano ,  Hiroaki Nakamura

发明人： Masatoshi Saito ,  Yuki Nakano ,  Hiroaki Nakamura

IPC分类号： H01L51/30

CPC分类号： H01L51/0067 ,  H01L51/0058 ,  H01L51/0072 ,  H01L51/0074 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/057 ,  H01L51/5296

摘要： An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a specified organic compound having an aromatic heterocyclic group in the center thereof; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed and has a large ON/OFF ratio, are provided.

摘要翻译： 一种有机薄膜晶体管，包括其上具有至少三个端子的基板，栅电极，源电极和漏电极，绝缘体层和有机半导体层，源极和漏极之间的电流在施加时被控制 对所述栅电极施加电压，其中，所述有机半导体层在其中央包含具有芳香族杂环基的规定的有机化合物; 以及利用有机薄膜晶体管的有机薄膜发光晶体管，其中有机薄膜晶体管是利用在源极和漏极之间流动的电流获得发光的发光，并且在施加了发光时控制发光 提供对栅电极的电压，并且相对于响应速度变高并且具有大的ON / OFF比。

公开(公告)号：US20100019234A1

公开(公告)日：2010-01-28

申请号：US12517462

申请日：2007-11-28

申请人： Masatoshi Saito ,  Yuki Nakano ,  Hiroaki Nakamura

发明人： Masatoshi Saito ,  Yuki Nakano ,  Hiroaki Nakamura

IPC分类号： H01L51/30

CPC分类号： H01L51/0094 ,  H01L51/0022 ,  H01L51/005 ,  H01L51/0058 ,  H01L51/0059 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0074 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105 ,  H01L51/5012 ,  H01L51/52 ,  H01L51/5203 ,  H01L51/5296

摘要： An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a specified organic compound having an aromatic heterocyclic group in the center thereof; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed and has a large ON/OFF ratio, are provided.

摘要翻译： 一种有机薄膜晶体管，包括其上具有至少三个端子的基板，栅电极，源电极和漏电极，绝缘体层和有机半导体层，源极和漏极之间的电流在施加时被控制 对所述栅电极施加电压，其中，所述有机半导体层在其中央包含具有芳香族杂环基的规定的有机化合物; 以及利用有机薄膜晶体管的有机薄膜发光晶体管，其中有机薄膜晶体管是利用在源极和漏极之间流动的电流获得发光的发光，并且在施加了发光时控制发光 提供对栅电极的电压，并且相对于响应速度变高并且具有大的ON / OFF比。

公开(公告)号：US20090256145A1

公开(公告)日：2009-10-15

申请号：US12514866

申请日：2007-11-13

申请人： Masatoshi Saito ,  Yuki Nakano ,  Hiroaki Nakamura

发明人： Masatoshi Saito ,  Yuki Nakano ,  Hiroaki Nakamura

IPC分类号： H01L51/10

CPC分类号： H01L51/5296 ,  H01L51/0022 ,  H01L51/0052 ,  H01L51/0054 ,  H01L51/0055 ,  H01L51/0056 ,  H01L51/0058 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0074 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105

摘要： An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a specified organic compound having a divalent aromatic hydrocarbon group having a phenanthrene structure in the center thereof; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed and has a large ON/OFF ratio, are provided.

摘要翻译： 一种有机薄膜晶体管，包括其上具有至少三个端子的基板，栅电极，源电极和漏电极，绝缘体层和有机半导体层，源极和漏极之间的电流在施加时被控制 对所述栅电极施加电压，其中所述有机半导体层包含其中心具有菲结构的二价芳族烃基的规定的有机化合物; 以及利用有机薄膜晶体管的有机薄膜发光晶体管，其中有机薄膜晶体管是利用在源极和漏极之间流动的电流获得发光的发光，并且在施加了发光时控制发光 提供对栅电极的电压，并且相对于响应速度变高并且具有大的ON / OFF比。