High-voltage capacitor, high-voltage capacitor device and magnetron
    1.
    发明授权
    High-voltage capacitor, high-voltage capacitor device and magnetron 失效
    高压电容器,高压电容器和磁控管

    公开(公告)号:US07460353B2

    公开(公告)日:2008-12-02

    申请号:US11386742

    申请日:2006-03-23

    IPC分类号: H01G4/35 H01G4/005

    CPC分类号: H01C7/10 H01C7/102

    摘要: A high-voltage capacitor is intended for use in a high-voltage capacitor device having at least two through conductors. The high-voltage capacitor includes a dielectric porcelain, an individual electrode, and a common electrode. At least two spaced individual electrodes are provided on one surface of the dielectric porcelain and intended to be connected one-to-one to the through conductors positioned outside the dielectric porcelain. The common electrode is provided on the other surface of the dielectric porcelain.

    摘要翻译: 高电压电容器用于具有至少两个贯通导体的高压电容器装置。 高压电容器包括电介质瓷,单独电极和公共电极。 在电介质陶瓷的一个表面上设置至少两个间隔开的单独电极,并且意图与位于电介质瓷瓷外部的贯通导体一对一连接。 公共电极设置在电介质瓷的另一面上。

    High-voltage feed-through capacitor and magnetron
    2.
    发明授权
    High-voltage feed-through capacitor and magnetron 失效
    高压直流电容器和磁控管

    公开(公告)号:US07184256B1

    公开(公告)日:2007-02-27

    申请号:US11444493

    申请日:2006-06-01

    IPC分类号: H01G4/35 H01G4/236

    CPC分类号: H01G4/35 H01G4/236

    摘要: A high-voltage feed-through capacitor includes: a capacitor element; a grounding metal fitting; an insulating resin; two through conductors; an insulating cover; and an insulating tube. The capacitor element has two separate electrodes on one side and one common electrode on the other side and is mounted on one side of the grounding metal fitting with the common electrode being connected to the same side of the grounding metal fitting. The insulating resin fills a space inside the capacitor element. Each through conductor has a rod-like conductor portion passing through the grounding metal fitting and the capacitor element and connected to the separate electrode. At least a portion of the insulating tube is attached to the rod-like conductor portion within the capacitor element. The insulating cover is attached to the rod-like conductor portion to have one end thereof in contact with one end of the insulating tube.

    摘要翻译: 高压直流电容器包括:电容器元件; 接地金属配件; 绝缘树脂; 两根导线; 绝缘盖; 和绝缘管。 电容器元件在一侧具有两个单独的电极,另一侧具有一个公共电极,并且安装在接地金属配件的一侧,公共电极连接到接地金属配件的同一侧。 绝缘树脂填充电容器元件内的空间。 每个贯通导体具有穿过接地金属配件和电容器元件并连接到单独电极的棒状导体部分。 绝缘管的至少一部分附接到电容器元件内的棒状导体部分。 绝缘盖附接到杆状导体部分,以使其一端与绝缘管的一端接触。

    High-voltage capacitor, high-voltage capacitor device and magnetoron
    3.
    发明申请
    High-voltage capacitor, high-voltage capacitor device and magnetoron 失效
    高压电容器,高压电容器和磁铁

    公开(公告)号:US20060227470A1

    公开(公告)日:2006-10-12

    申请号:US11386742

    申请日:2006-03-23

    IPC分类号: H01G2/12

    CPC分类号: H01C7/10 H01C7/102

    摘要: A high-voltage capacitor is intended for use in a high-voltage capacitor device having at least two through conductors. The high-voltage capacitor includes a dielectric porcelain, an individual electrode, and a common electrode. At least two spaced individual electrodes are provided on one surface of the dielectric porcelain and intended to be connected one-to-one to the through conductors positioned outside the dielectric porcelain. The common electrode is provided on the other surface of the dielectric porcelain.

    摘要翻译: 高电压电容器用于具有至少两个贯通导体的高压电容器装置。 高压电容器包括电介质瓷,单独电极和公共电极。 在电介质陶瓷的一个表面上设置至少两个间隔开的单独电极,并且意图与位于电介质瓷瓷外部的贯通导体一对一连接。 公共电极设置在电介质瓷的另一面上。

    HIGH-VOLTAGE FEED-THROUGH CAPACITOR AND MAGNETRON
    4.
    发明申请
    HIGH-VOLTAGE FEED-THROUGH CAPACITOR AND MAGNETRON 失效
    高电压馈电电容和磁铁

    公开(公告)号:US20070047174A1

    公开(公告)日:2007-03-01

    申请号:US11444493

    申请日:2006-06-01

    IPC分类号: H01G4/35

    CPC分类号: H01G4/35 H01G4/236

    摘要: A high-voltage feed-through capacitor includes: a capacitor element; a grounding metal fitting; an insulating resin; two through conductors; an insulating cover; and an insulating tube. The capacitor element has two separate electrodes on one side and one common electrode on the other side and is mounted on one side of the grounding metal fitting with the common electrode being connected to the same side of the grounding metal fitting. The insulating resin fills a space inside the capacitor element. Each through conductor has a rod-like conductor portion passing through the grounding metal fitting and the capacitor element and connected to the separate electrode. At least a portion of the insulating tube is attached to the rod-like conductor portion within the capacitor element. The insulating cover is attached to the rod-like conductor portion to have one end thereof in contact with one end of the insulating tube.

    摘要翻译: 高压直流电容器包括:电容器元件; 接地金属配件; 绝缘树脂; 两根导线; 绝缘盖; 和绝缘管。 电容器元件在一侧具有两个单独的电极,另一侧具有一个公共电极,并且安装在接地金属配件的一侧,公共电极连接到接地金属配件的同一侧。 绝缘树脂填充电容器元件内的空间。 每个贯通导体具有穿过接地金属配件和电容器元件并连接到单独电极的棒状导体部分。 绝缘管的至少一部分附接到电容器元件内的棒状导体部分。 绝缘盖附接到杆状导体部分,以使其一端与绝缘管的一端接触。

    High-voltage capacitor, hight-voltage capacitor device and magnetron
    5.
    发明申请
    High-voltage capacitor, hight-voltage capacitor device and magnetron 失效
    高压电容器,高压电容器和磁控管

    公开(公告)号:US20050168912A1

    公开(公告)日:2005-08-04

    申请号:US11036050

    申请日:2005-01-18

    IPC分类号: H01J23/15 H01G4/12 H01G4/35

    摘要: The present invention is directed to a high-voltage capacitor, high-voltage capacitor device and magnetron in which, undesirable radiation waves generated in the frequency range of 450 MHz to 1000 MHz in a magnetron are suppressed to such a level that there is no adverse effect on the peripheral devices. The dielectric porcelain comprises a body 210 and through holes 211, 212. The body 210 includes a portion (216, 217) that is narrowed on both sides in the middle of the body in the plan view. The through holes 211, 212 are formed in the body, arranged at a distance from each other over the narrowed portion (216, 217). One individual electrode 213 is provided on the surface of the body 210 at which the through hole 211 opens. The other individual electrode 214 is provided on the surface of the body 210 at which the through hole 212 opens. The common electrode 215 is provided on another surface of the body 210 at which the through holes 211, 212 open.

    摘要翻译: 本发明涉及一种高压电容器,高压电容器件和磁控管,其中在磁控管中在450MHz至1000MHz的频率范围内产生的不需要的辐射波被抑制到不会有不利的水平 对外围设备的影响。 电介质瓷器包括主体210和通孔211,212。主体210包括在平面图中在身体中间两侧变窄的部分(216,217)。 通孔211,212形成在主体中,在狭窄部分(216,217)上彼此间隔一定距离设置。 一个单独的电极213设置在主体210的通孔211打开的表面上。 另一个单独电极214设置在主体210的通孔212所在的表面上。 公共电极215设置在主体210的另一表面上,通孔211,212处于此开口。

    High-voltage capacitor, high-voltage capacitor device and magnetron
    6.
    发明授权
    High-voltage capacitor, high-voltage capacitor device and magnetron 失效
    高压电容器,高压电容器和磁控管

    公开(公告)号:US07042704B2

    公开(公告)日:2006-05-09

    申请号:US11036050

    申请日:2005-01-18

    IPC分类号: H01G4/35

    摘要: The present invention is directed to a high-voltage capacitor, high-voltage capacitor device and magnetron in which, undesirable radiation waves generated in the frequency range of 450 MHz to 1000 MHz in a magnetron are suppressed to such a level that there is no adverse effect on the peripheral devices. The dielectric porcelain comprises a body 210 and through holes 211, 212. The body 210 includes a portion (216, 217) that is narrowed on both sides in the middle of the body in the plan view. The through holes 211, 212 are formed in the body, arranged at a distance from each other over the narrowed portion (216, 217). One individual electrode 213 is provided on the surface of the body 210 at which the through hole 211 opens. The other individual electrode 214 is provided on the surface of the body 210 at which the through hole 212 opens. The common electrode 215 is provided on another surface of the body 210 at which the through holes 211, 212 open.

    摘要翻译: 本发明涉及一种高压电容器,高压电容器件和磁控管,其中在磁控管中在450MHz至1000MHz的频率范围内产生的不需要的辐射波被抑制到不会有不利的水平 对外围设备的影响。 电介质瓷器包括主体210和通孔211,212。主体210包括在平面图中在身体中间两侧变窄的部分(216,217)。 通孔211,212形成在主体中,在狭窄部分(216,217)上彼此间隔一定距离设置。 一个单独的电极213设置在主体210的通孔211打开的表面上。 另一个单独电极214设置在主体210的通孔212所在的表面上。 公共电极215设置在主体210的另一表面上,通孔211,212处于此开口。

    High voltage capacitor and magnetron

    公开(公告)号:US20050073799A1

    公开(公告)日:2005-04-07

    申请号:US10913367

    申请日:2004-08-09

    CPC分类号: H01G4/35

    摘要: A capacitor has electrodes at surfaces thereof, with one of the electrodes secured onto one surface of a grounding metal. Through conductors pass through the capacitor and the grounding metal and are connected to the other electrodes so as to achieve electrical continuity. An insulating case is provided at one surface of the grounding metal, with one end of the insulating case fitted around the external circumference of the raised portion of the grounding metal. Insulating resin fills a space inside the insulating case, the internal space of the grounding metal and a space around the capacitor. The insulating resin comprises an epoxy resin containing a brominated fire retardant, and the brominated fire retardant is a brominated aromatic glycidyl ether.

    High voltage capacitor and magnetron
    8.
    发明授权
    High voltage capacitor and magnetron 有权
    高压电容器和磁控管

    公开(公告)号:US06909590B2

    公开(公告)日:2005-06-21

    申请号:US10913367

    申请日:2004-08-09

    CPC分类号: H01G4/35

    摘要: A capacitor has electrodes at surfaces thereof, with one of the electrodes secured onto one surface of a grounding metal. Through conductors pass through the capacitor and the grounding metal and are connected to the other electrodes so as to achieve electrical continuity. An insulating case is provided at one surface of the grounding metal, with one end of the insulating case fitted around the external circumference of the raised portion of the grounding metal. Insulating resin fills a space inside the insulating case, the internal space of the grounding metal and a space around the capacitor. The insulating resin comprises an epoxy resin containing a brominated fire retardant, and the brominated fire retardant is a brominated aromatic glycidyl ether.

    摘要翻译: 电容器在其表面具有电极,其中一个电极固定在接地金属的一个表面上。 通过导体穿过电容器和接地金属并且连接到其它电极以实现电连续性。 绝缘壳体设置在接地金属的一个表面处,绝缘壳体的一端围绕接地金属的凸起部分的外圆周安装。 绝缘树脂填充绝缘箱内的空间,接地金属的内部空间和电容器周围的空间。 绝缘树脂包含含有溴化阻燃剂的环氧树脂,溴化阻燃剂是溴化芳族缩水甘油醚。

    Manufacturing method of semiconductor device
    9.
    发明授权
    Manufacturing method of semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号:US08629055B2

    公开(公告)日:2014-01-14

    申请号:US12565333

    申请日:2009-09-23

    IPC分类号: H01L21/316

    摘要: A coating solution of SOG is applied on a silicon oxynitride film (11) and precured. As a result, moisture contained in the coating solution volatilizes, and an SOG film (12) is formed. Next, a coating solution of SOG is applied on the SOG film (12) and precured. As a result, an SOG film (13) is formed. Thereafter, a coating solution of SOG is applied on the SOG film (13) and precured. As a result, an SOG film (14) is formed. Subsequently, a main cure of the SOG films (12, 13, and 14) is performed. The viscosity of the coating solution of SOG used for forming the SOG film (12) is lower than those of the coating solutions of SOG used for forming the SOG films (13 and 14).

    摘要翻译: 将SOG涂层溶液涂覆在氮氧化硅膜(11)上并预硫化。 结果,涂布液中含有的水分挥发,形成SOG膜(12)。 接着,将SOG的涂布液涂布在SOG膜(12)上并进行预固化。 结果,形成SOG膜(13)。 此后,将SOG涂层溶液涂布在SOG膜(13)上并预硫化。 结果,形成SOG膜(14)。 随后,执行SOG膜(12,13和14)的主要固化。 用于形成SOG膜(12)的SOG涂层溶液的粘度低于用于形成SOG膜(13和14)的SOG涂层溶液的粘度。