公开(公告)号：US20100229416A1

公开(公告)日：2010-09-16

申请号：US12647952

申请日：2009-12-28

申请人： Yukinori ABURATANI ,  Seiyo NAKASHIMA ,  Masakazu SHIMADA

发明人： Yukinori ABURATANI ,  Seiyo NAKASHIMA ,  Masakazu SHIMADA

IPC分类号： F26B25/08

CPC分类号： H01L21/67757 ,  H01L21/67109 ,  H01L21/67115

摘要： Provided is a substrate processing apparatus that can decrease the time necessary for cooling a processed wafer for improving the throughput. The substrate processing apparatus comprises: a process chamber configured to process a substrate; a substrate supporter configured to support the substrate and load the substrate into the process chamber; a transfer mechanism configured to carry the substrate to the substrate supporter; and a non-sealing type shield part installed between the substrate supporter and the transfer mechanism.

摘要翻译： 提供了一种可以减少冷却处理晶片所需的时间以提高生产量的基板处理装置。 基板处理装置包括：处理室，被配置为处理基板; 衬底支撑件，其构造成支撑所述衬底并将所述衬底加载到所述处理室中; 传送机构，其构造成将所述基板运送到所述基板支撑件; 以及安装在基板支撑件和转印机构之间的非密封型屏蔽部。

公开(公告)号：US20090197402A1

公开(公告)日：2009-08-06

申请号：US12363045

申请日：2009-01-30

申请人： Seiyo NAKASHIMA ,  Tomoyuki Yamada ,  Masakazu Shimada

发明人： Seiyo NAKASHIMA ,  Tomoyuki Yamada ,  Masakazu Shimada

IPC分类号： H01L21/02 ,  C23C16/54

CPC分类号： C23C16/45591 ,  C23C16/4584 ,  H01L21/67017 ,  H01L21/67303 ,  H01L21/68792

摘要： In a substrate processing apparatus, a process vessel is configured to accommodate and process a substrate held at a horizontal position. A gas introduction port is installed at a periphery of a first side of the process vessel and configured to introduce gas into the process vessel from a lateral direction of the substrate. A gas exhaust port is installed at a second side of the process vessel which is opposite to the first side, and is configured to exhaust gas inside the process vessel from a lateral direction of the substrate. A slope part is installed between the gas introduction port and the gas exhaust port inside the process vessel, and is configured to guide a flow path of the gas introduced into the process vessel.

摘要翻译： 在基板处理装置中，处理容器构造成容纳并处理保持在水平位置的基板。 气体导入口安装在处理容器的第一侧的周边，并被构造成从衬底的横向方向将气体引入处理容器。 排气口安装在与第一侧相对的处理容器的第二侧，并且构造成从衬底的横向方向排出处理容器内的气体。 倾斜部分安装在处理容器内的气体导入口和排气口之间，构成为引导导入处理容器的气体的流路。

公开(公告)号：US20110305543A1

公开(公告)日：2011-12-15

申请号：US13156925

申请日：2011-06-09

申请人： Seiyo NAKASHIMA ,  Yuichi MATSUDA ,  Takashi NOGAMI ,  Shinobu SUGIURA ,  Tomoyuki YAMADA

发明人： Seiyo NAKASHIMA ,  Yuichi MATSUDA ,  Takashi NOGAMI ,  Shinobu SUGIURA ,  Tomoyuki YAMADA

IPC分类号： H01L21/677 ,  H01L21/673

CPC分类号： H01L21/67757 ,  H01L21/67017

摘要： A substrate processing apparatus includes a holder configured to hold a substrate and carry the substrate into a process chamber, a waiting station located outside the process chamber in which the holder waits prior to carrying the substrate into the process chamber, a circulation path configured to circulate a gas throughout the waiting station, and an exhaust path formed in the circulation path and configured to exhaust the gas from the waiting station.

摘要翻译： 基板处理装置包括保持器，其构造成保持基板并将基板运送到处理室中，等待站位于处理室外部，其中保持器在将基板运送到处理室之前等待，循环路径被配置为循环 整个等候站内的气体，以及形成在循环路径中的排气路径，其构造成从等待站排出气体。