公开(公告)号：US07700054B2

公开(公告)日：2010-04-20

申请号：US11987493

申请日：2007-11-30

申请人： Akira Hayashida ,  Masaaki Ueno ,  Masakazu Shimada ,  Yukinori Aburatani ,  Tomoyuki Yamada ,  Seiyo Nakashima ,  Masashi Sugishita

发明人： Akira Hayashida ,  Masaaki Ueno ,  Masakazu Shimada ,  Yukinori Aburatani ,  Tomoyuki Yamada ,  Seiyo Nakashima ,  Masashi Sugishita

IPC分类号： H01L21/00 ,  B01J19/00 ,  F27B5/14

CPC分类号： H01L21/67109 ,  F27B17/0025

摘要： An object of the present invention is to improve substrate processing efficiency. A substrate processing apparatus has a reaction tube that processes a substrate inside, and a heating apparatus disposed so as to surround an external periphery of the reaction tube, so that at least a gas inlet tube is disposed on a side surface in an area in which the substrate is processed inside the reaction tube, and the heating apparatus has a heat insulator that surrounds the reaction tube, an inlet opening formed in the shape of a groove in the heat insulator from the lower end of the heating apparatus so as to avoid the gas inlet tube, and a heating element disposed between the heat insulator and the reaction tube.

摘要翻译： 本发明的目的是提高基板处理效率。 基板处理装置具有处理内部的基板的反应管和设置成围绕反应管的外周的加热装置，使得至少一个气体入口管设置在其中的 在反应管内加工基板，加热装置具有围绕反应管的绝热体，从加热装置的下端形成为绝热体的槽状的入口开口，以避免 气体入口管和设置在隔热件和反应管之间的加热元件。

公开(公告)号：US20090191718A1

公开(公告)日：2009-07-30

申请号：US12382618

申请日：2009-03-19

申请人： Seiyo Nakashima ,  Yukinori Aburatani

发明人： Seiyo Nakashima ,  Yukinori Aburatani

IPC分类号： H01L21/283

CPC分类号： C23C16/345 ,  C23C16/44 ,  C23C16/4412 ,  C23C16/45502 ,  C23C16/45519 ,  C23C16/4584

摘要： A method of manufacturing a semiconductor device includes the steps of: conveying a plurality of substrates disposed in a direction perpendicular to a substrate processing surface into a processing chamber provided inside of a reaction tube, with an outer periphery surrounded by a heating device; and processing the substrates by introducing gas to a gas inlet tube provided on a side face of the reaction tube in a region for processing the substrates inside the reaction tube, so as to reach at least an outside of the heating device, and spouting the gas into the processing chamber from a slit-shaped gas spouting port disposed in a form so as to straddle at least a plurality of the substrates in a direction perpendicular to the substrate processing surface.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：将设置在与衬底处理表面垂直的方向上的多个衬底输送到设置在反应管内部的处理室中，其外周被加热装置包围; 并且通过在设置在反应管的侧面的气体导入管中的处理反应管内部的基板的区域中引入气体来处理基板，以至少到达加热装置的外部，并且喷射气体 从形成为以与基板处理表面垂直的方向跨越至少多个基板的形式的狭缝状气体喷射口将其进入处理室。

公开(公告)号：US20080134977A1

公开(公告)日：2008-06-12

申请号：US11665217

申请日：2005-10-26

申请人： Seiyo Nakashima ,  Tomoshi Taniyama ,  Kenichi Suzaki ,  Yoshikazu Takashima

发明人： Seiyo Nakashima ,  Tomoshi Taniyama ,  Kenichi Suzaki ,  Yoshikazu Takashima

IPC分类号： C23C16/00 ,  H01L21/00

CPC分类号： H01L21/67017 ,  C23C16/4408 ,  H01L21/67757

摘要： A gas flow in a load-lock type preliminary chamber is improved. A load-lock type substrate treating apparatus contains a processing chamber (34) for storing and processing a substrate (1); a preliminary chamber (23) continuously arranged to the processing chamber (31); a substrate holding jig mechanism (40) for carrying in and carrying out a substrate holding jig (50) holding multiple substrates (1), to and from the processing chamber (31); an inert gas supply port (61) for supplying inert gas to the preliminary chamber (23); a first exhaust port (71) provided above the inert gas supply port (61) in the preliminary chamber (23) to exhaust the inert gas: a second exhaust port (81) to draw a vacuum in the preliminary chamber (23); and a controller (100) for performing control so that the inert gas supplied from the inert gas supply port (61) is exhausted only from the first exhaust port (71), while maintaining the preliminary chamber (23) drawn a vacuum from the second exhaust port (81) at a specified pressure after raising the pressure.

摘要翻译： 提高了装载型预备室中的气流。 负载锁定型基板处理装置包括用于存储和处理基板（1）的处理室（34）。 连续地布置到处理室（31）的预备室（23）; 用于承载并执行将多个基板（1）保持在所述处理室（31）上的基板保持夹具（50）的基板保持夹具机构（40）。 用于向预备室（23）供给惰性气体的惰性气体供给口（61）; 第一排气口（71），其设置在所述预备室（23）中的所述惰性气体供给口（61）的上方排出所述惰性气体;第二排气口（81），在所述预备室（23）中抽真空; 以及控制器（100），用于进行控制，使得从惰性气体供给口（61）供给的惰性气体仅从第一排气口（71）排出，同时保持预备室（23）从第二排气口 排气口（81）在提高压力之后处于规定的压力。

公开(公告)号：US08420167B2

公开(公告)日：2013-04-16

申请号：US12382618

申请日：2009-03-19

申请人： Seiyo Nakashima ,  Yukinori Aburatani

发明人： Seiyo Nakashima ,  Yukinori Aburatani

IPC分类号： C23C16/455

CPC分类号： C23C16/345 ,  C23C16/44 ,  C23C16/4412 ,  C23C16/45502 ,  C23C16/45519 ,  C23C16/4584

摘要： A method of manufacturing a semiconductor device includes the steps of: conveying a plurality of substrates disposed in a direction perpendicular to a substrate processing surface into a processing chamber provided inside of a reaction tube, with an outer periphery surrounded by a heating device; and processing the substrates by introducing gas to a gas inlet tube provided on a side face of the reaction tube in a region for processing the substrates inside the reaction tube, so as to reach at least an outside of the heating device, and spouting the gas into the processing chamber from a slit-shaped gas spouting port disposed in a form so as to straddle at least a plurality of the substrates in a direction perpendicular to the substrate processing surface.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：将设置在与衬底处理表面垂直的方向上的多个衬底输送到设置在反应管内部的处理室中，其外周被加热装置包围; 并且通过在设置在反应管的侧面的气体导入管中的处理反应管内部的基板的区域中引入气体来处理基板，以至少到达加热装置的外部，并且喷射气体 从形成为以与基板处理表面垂直的方向跨越至少多个基板的形式的狭缝状气体喷射口将其进入处理室。

公开(公告)号：US08303712B2

公开(公告)日：2012-11-06

申请号：US12363045

申请日：2009-01-30

申请人： Seiyo Nakashima ,  Tomoyuki Yamada ,  Masakazu Shimada

发明人： Seiyo Nakashima ,  Tomoyuki Yamada ,  Masakazu Shimada

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45591 ,  C23C16/4584 ,  H01L21/67017 ,  H01L21/67303 ,  H01L21/68792

摘要： In a substrate processing apparatus, a process vessel is configured to accommodate and process a substrate held at a horizontal position. A gas introduction port is installed at a periphery of a first side of the process vessel and configured to introduce gas into the process vessel from a lateral direction of the substrate. A gas exhaust port is installed at a second side of the process vessel which is opposite to the first side, and is configured to exhaust gas inside the process vessel from a lateral direction of the substrate. A slope part is installed between the gas introduction port and the gas exhaust port inside the process vessel, and is configured to guide a flow path of the gas introduced into the process vessel.

摘要翻译： 在基板处理装置中，处理容器构造成容纳并处理保持在水平位置的基板。 气体导入口安装在处理容器的第一侧的周边，并被构造成从衬底的横向方向将气体引入处理容器。 排气口安装在与第一侧相对的处理容器的第二侧，并且构造成从衬底的横向方向排出处理容器内的气体。 倾斜部分安装在处理容器内的气体导入口和排气口之间，构成为引导导入处理容器的气体的流路。

公开(公告)号：US08277161B2

公开(公告)日：2012-10-02

申请号：US12213679

申请日：2008-06-23

申请人： Yukinori Aburatani ,  Seiyo Nakashima

发明人： Yukinori Aburatani ,  Seiyo Nakashima

IPC分类号： H01L21/677

CPC分类号： H01L21/67742 ,  H01L21/67109 ,  H01L21/67766 ,  H01L21/67769

摘要： A substrate processing apparatus is equipped with a processing furnace for processing wafers, a loading port which is used for carrying a pod containing substrates into and out of a case, a pod transport mechanism for transporting the container at least from the entrance and exit place, and a top storage which is disposed above the processing furnace in such a manner that at least part of the top storage overlaps with the processing furnace in the direction of gravity.

摘要翻译： 基板处理装置配备有用于处理晶片的处理炉，用于将包含基板的壳体运送到壳体中的装载口，至少从入口和出口处输送容器的荚输送机构， 以及顶部储存器，其设置在处理炉上方，使得顶部储存器的至少一部分在重力方向上与处理炉重叠。

公开(公告)号：US20100229416A1

公开(公告)日：2010-09-16

申请号：US12647952

申请日：2009-12-28

申请人： Yukinori ABURATANI ,  Seiyo NAKASHIMA ,  Masakazu SHIMADA

发明人： Yukinori ABURATANI ,  Seiyo NAKASHIMA ,  Masakazu SHIMADA

IPC分类号： F26B25/08

CPC分类号： H01L21/67757 ,  H01L21/67109 ,  H01L21/67115

摘要： Provided is a substrate processing apparatus that can decrease the time necessary for cooling a processed wafer for improving the throughput. The substrate processing apparatus comprises: a process chamber configured to process a substrate; a substrate supporter configured to support the substrate and load the substrate into the process chamber; a transfer mechanism configured to carry the substrate to the substrate supporter; and a non-sealing type shield part installed between the substrate supporter and the transfer mechanism.

摘要翻译： 提供了一种可以减少冷却处理晶片所需的时间以提高生产量的基板处理装置。 基板处理装置包括：处理室，被配置为处理基板; 衬底支撑件，其构造成支撑所述衬底并将所述衬底加载到所述处理室中; 传送机构，其构造成将所述基板运送到所述基板支撑件; 以及安装在基板支撑件和转印机构之间的非密封型屏蔽部。

公开(公告)号：USD618638S1

公开(公告)日：2010-06-29

申请号：US29327478

申请日：2008-11-06

申请人： Seiyo Nakashima

设计人： Seiyo Nakashima

公开(公告)号：US20090197402A1

公开(公告)日：2009-08-06

申请号：US12363045

申请日：2009-01-30

申请人： Seiyo NAKASHIMA ,  Tomoyuki Yamada ,  Masakazu Shimada

发明人： Seiyo NAKASHIMA ,  Tomoyuki Yamada ,  Masakazu Shimada

IPC分类号： H01L21/02 ,  C23C16/54

CPC分类号： C23C16/45591 ,  C23C16/4584 ,  H01L21/67017 ,  H01L21/67303 ,  H01L21/68792

摘要： In a substrate processing apparatus, a process vessel is configured to accommodate and process a substrate held at a horizontal position. A gas introduction port is installed at a periphery of a first side of the process vessel and configured to introduce gas into the process vessel from a lateral direction of the substrate. A gas exhaust port is installed at a second side of the process vessel which is opposite to the first side, and is configured to exhaust gas inside the process vessel from a lateral direction of the substrate. A slope part is installed between the gas introduction port and the gas exhaust port inside the process vessel, and is configured to guide a flow path of the gas introduced into the process vessel.

摘要翻译： 在基板处理装置中，处理容器构造成容纳并处理保持在水平位置的基板。 气体导入口安装在处理容器的第一侧的周边，并被构造成从衬底的横向方向将气体引入处理容器。 排气口安装在与第一侧相对的处理容器的第二侧，并且构造成从衬底的横向方向排出处理容器内的气体。 倾斜部分安装在处理容器内的气体导入口和排气口之间，构成为引导导入处理容器的气体的流路。

公开(公告)号：USD652395S1

公开(公告)日：2012-01-17

申请号：US29371213

申请日：2010-11-29

申请人： Masakazu Shimada ,  Takashi Nogami ,  Satoshi Aizawa ,  Seiyo Nakashima ,  Tomoyuki Yamada ,  Shinobu Sugiura ,  Yukinori Aburatani ,  Mitsuhiro Nagata

设计人： Masakazu Shimada ,  Takashi Nogami ,  Satoshi Aizawa ,  Seiyo Nakashima ,  Tomoyuki Yamada ,  Shinobu Sugiura ,  Yukinori Aburatani ,  Mitsuhiro Nagata