Silicon microphone and manufacturing method therefor
    1.
    发明申请
    Silicon microphone and manufacturing method therefor 审中-公开
    硅麦克风及其制造方法

    公开(公告)号:US20080019543A1

    公开(公告)日:2008-01-24

    申请号:US11825057

    申请日:2007-07-03

    IPC分类号: H04R7/06 H04R31/00

    摘要: In a silicon microphone, a corrugation is formed in a conductive layer between a center portion forming a diaphragm and a periphery, wherein the corrugation is formed on an imaginary line connecting a plurality of supports formed in a circumferential direction of the conductive layer, whereby it is possible to increase the rigidity of the conductive layer; hence, distortion or deformation may hardly occur in the conductive layer irrespective of variations of stress applied thereto. Alternatively, a planar portion is continuously formed on both sides of a step portion in the plate so as to increase its rigidity, wherein a plurality of holes are uniformly formed and arranged in the planar portion by avoiding the step portion. Thus, it is possible to realize a high sensitivity and uniformity of performance and characteristics in the silicon microphone.

    摘要翻译: 在硅麦克风中,在形成隔膜的中心部分和周边之间的导电层中形成波纹,其中波纹形成在连接形成在导电层的圆周方向上的多个支撑件的假想线上,由此 可以增加导电层的刚性; 因此,无论施加于其上的应力的变化如何,导电层中几乎不发生变形或变形。 或者,平板部分连续地形成在板的台阶部分的两侧,从而增加其刚性,其中通过避免台阶部分将多个孔均匀地形成并布置在平面部分中。 因此,可以实现硅麦克风的高灵敏度和性能和特性的均匀性。

    CAPACITOR MICROPHONE AND DIAPHRAGM THEREFOR
    2.
    发明申请
    CAPACITOR MICROPHONE AND DIAPHRAGM THEREFOR 审中-公开
    电容麦克风和其他胶片

    公开(公告)号:US20070121972A1

    公开(公告)日:2007-05-31

    申请号:US11534915

    申请日:2006-09-25

    IPC分类号: H04R25/00

    摘要: In a capacitor microphone, a diaphragm is positioned opposite to a fixed electrode for covering inner holes of a ring-shaped support, wherein when the diaphragm is deflected to approach the fixed electrode due to electrostatic attraction upon application of a bias voltage, internal stress that occurs on the diaphragm is canceled by compressive stress that is applied to the diaphragm in advance. The diaphragm is formed using a multilayered structure including a first thin film and a second thin film whose internal stress differs from the internal stress of the first thin film, thus adjusting the total internal stress thereof. The diaphragm can be formed in such a way that a center layer having a single-layered structure is sandwiched between first and second coating layers having controlled residual tensions and resistance against hydrofluoric acid.

    摘要翻译: 在电容式麦克风中,隔膜与用于覆盖环状支撑体的内孔的固定电极相对设置,其中当施加偏置电压时由于静电吸引而使膜片偏转到接近固定电极时,内部应力 在隔膜上发生的压力被预先施加到隔膜上的压缩应力消除。 隔膜使用包括第一薄膜和内应力与第一薄膜的内应力不同的第二薄膜的多层结构形成,从而调节其总内应力。 膜片可以以具有单层结构的中心层被夹在具有受控的残余张力和耐氢氟酸的第一和第二涂层之间的方式形成。

    Condenser microphone
    3.
    发明授权
    Condenser microphone 有权
    冷凝器麦克风

    公开(公告)号:US08126167B2

    公开(公告)日:2012-02-28

    申请号:US11691943

    申请日:2007-03-27

    IPC分类号: H04R25/00

    摘要: The present invention provides a condenser microphone, in which, with a simple manufacturing process, vibration characteristics of a diaphragm are improved, and a parasitic capacitance occurring between the diaphragm and a back plate is reduced, thus improving sensitivity. Specifically, the diaphragm having a gear-like shape including a center portion and a plurality of arms and the back plate having a gear-like shape including a center portion and a plurality of arms are positioned opposite to each other above a substrate, wherein the arms of the diaphragm and the arms of the back plate are not positioned opposite to each other. Alternatively, it is possible to independently support the diaphragm and the back plate above the substrate. Furthermore, it is possible to support the back plate above the substrate by means of a plurality of supports inserted into a plurality of holes formed in the center portion of the diaphragm.

    摘要翻译: 本发明提供了一种电容麦克风,其中通过简单的制造工艺,提高了隔膜的振动特性,并且减小了在隔膜和背板之间产生的寄生电容,从而提高了灵敏度。 具体而言,具有中央部和多个臂的齿轮状的隔膜和具有中心部和多个臂的齿轮状的背板位于基板的上方相对的位置, 隔膜的臂和背板的臂不彼此相对定位。 或者,可以独立地支撑基板上方的隔膜和背板。 此外,可以通过插入形成在隔膜的中心部分中的多个孔中的多个支撑件来将基板支撑在基板上。

    Vibration transducer and manufacturing method therefor
    4.
    发明申请
    Vibration transducer and manufacturing method therefor 审中-公开
    振动传感器及其制造方法

    公开(公告)号:US20090136064A1

    公开(公告)日:2009-05-28

    申请号:US12284935

    申请日:2008-09-26

    IPC分类号: H04R25/00

    CPC分类号: H04R19/00 H04R31/00

    摘要: A vibration transducer is constituted of a substrate, a diaphragm having a conductive property, a plate having a conductive property, and a plurality of first spacers having pillar shapes which are formed using a deposited film having an insulating property joining the plate so as to support the plate relative to the diaphragm with a gap therebetween. It is possible to introduce a plurality of second spacers having pillar shapes support the plate relative to the substrate with a gap therebetween, and/or a plurality of third spacers having pillar shapes which support the diaphragm relative to the substrate with a gap therebetween. When the diaphragm vibrates relative to the plate, an electrostatic capacitance formed therebetween is varied so as to detect vibration with a high sensitivity. The diaphragm has a plurality of arms whose outlines are curved so that the intermediate regions thereof are reduced in width.

    摘要翻译: 振动传感器由基板,具有导电性的隔膜,具有导电性的板构成,多个具有柱形状的第一间隔件,该第一间隔件具有使用具有连接板的绝缘性的沉积膜形成,以便支撑 该板相对于隔膜具有间隙。 可以引入具有支柱形状的多个第二间隔件,其间具有间隙地相对于基板支撑板,和/或多个第三间隔件,其具有支撑隔膜相对于基板的间隔的间隔的柱形。 当隔膜相对于板振动时,其间形成的静电电容变化,以便以高灵敏度检测振动。 隔膜具有多个臂,其轮廓弯曲,使得其中间区域的宽度减小。

    CONDENSER MICROPHONE
    5.
    发明申请
    CONDENSER MICROPHONE 有权
    冷凝器麦克风

    公开(公告)号:US20070286438A1

    公开(公告)日:2007-12-13

    申请号:US11691943

    申请日:2007-03-27

    IPC分类号: H04R19/04

    摘要: The present invention provides a condenser microphone, in which, with a simple manufacturing process, vibration characteristics of a diaphragm are improved, and a parasitic capacitance occurring between the diaphragm and a back plate is reduced, thus improving sensitivity. Specifically, the diaphragm having a gear-like shape including a center portion and a plurality of arms and the back plate having a gear-like shape including a center portion and a plurality of arms are positioned opposite to each other above a substrate, wherein the arms of the diaphragm and the arms of the back plate are not positioned opposite to each other. Alternatively, it is possible to independently support the diaphragm and the back plate above the substrate. Furthermore, it is possible to support the back plate above the substrate by means of a plurality of supports inserted into a plurality of holes formed in the center portion of the diaphragm.

    摘要翻译: 本发明提供了一种电容麦克风,其中通过简单的制造工艺,提高了隔膜的振动特性,并且减小了在隔膜和背板之间产生的寄生电容,从而提高了灵敏度。 具体而言,具有中央部和多个臂的齿轮状的隔膜和具有中心部和多个臂的齿轮状的背板位于基板的上方相对的位置, 隔膜的臂和背板的臂不彼此相对定位。 或者,可以独立地支撑基板上方的隔膜和背板。 此外,可以通过插入形成在隔膜的中心部分中的多个孔中的多个支撑件来将基板支撑在基板上。

    Mixing recorder, control method therefore, and computer-readable medium including program for implementing the control method
    6.
    发明授权
    Mixing recorder, control method therefore, and computer-readable medium including program for implementing the control method 失效
    因此,混合记录器,控制方法以及包括用于实现控制方法的程序的计算机可读介质

    公开(公告)号:US07212469B2

    公开(公告)日:2007-05-01

    申请号:US10702381

    申请日:2003-11-05

    IPC分类号: H04B1/20

    摘要: There is provided a mixing recorder which enables the user to readily produce music using overdubbing and/or other recording techniques while suppressing degradation of sound quality to the minimum and enables the user to easily find out his/her desired mixing result from a large number of mixing results obtained in the process of mixing. An audio signal is input, and a source file is read out from a memory card and an audio signal is reproduced based on the source file. The input audio signal and the reproduced audio signal are mixed into a mixed signal, which is then stored as a new source file in the memory card. The source file stored in advance in the memory card is backed up before the new source file is stored in the memory card, and in the back-up, the source file is automatically backed up by generating a file given a new name associated with a name of a source file to be backed up and having the same contents as the contents of the source file.

    摘要翻译: 提供了一种混合记录器,其使得用户能够使用超频和/或其他记录技术容易地产生音乐,同时将声音质量的降低降至最低,并且使得用户能够从大量的音频信号中容易地找到他/她期望的混合结果 在混合过程中得到的混合结果。 输入音频信号,并且从存储卡读出源文件,并且基于源文件再现音频信号。 输入音频信号和再现的音频信号被混合成混合信号,然后将其作为新的源文件存储在存储卡中。 预先存储在存储卡中的源文件在新的源文件存储在存储卡中之前被备份,并且在备份中,通过生成给定与新的名称相关联的新名称的文件来自动备份源文件 要备份并具有与源文件内容相同内容的源文件的名称。

    Method of manufacturing a laminated wiring structure preventing impurity
diffusion therein from N+ and P+ regions in CMOS device with ohmic
contact
    7.
    发明授权
    Method of manufacturing a laminated wiring structure preventing impurity diffusion therein from N+ and P+ regions in CMOS device with ohmic contact 失效
    制造具有欧姆接触的CMOS器件中的N +和P +区域中的杂质扩散的层叠布线结构的方法

    公开(公告)号:US5858868A

    公开(公告)日:1999-01-12

    申请号:US631036

    申请日:1997-04-15

    申请人: Seiji Hirade

    发明人: Seiji Hirade

    CPC分类号: H01L21/28512 H01L21/76838

    摘要: Regions of n.sup.+ - and p.sup.+ -types of a semiconductor device are interconnected with a laminated wiring having a low wiring resistance. On the surface of a semiconductor substrate (10), an insulating film (20) is formed covering a field insulating film (12). Contact holes for the n.sup.+ - and p.sup.+ -type regions are formed in the insulating film (20) at areas corresponding to the n.sup.+ - and p.sup.+ -type regions. Thereafter, a refractory metal layer (30A) such as Ti for forming an ohmic contact having a thickness of 100 angstroms or less, an impurity diffusion preventing conductive layer (32A) such as TiN layer, and a refractory metal layer or refractory metal silicide layer (34A) such as W or WSi layer, are formed sequentially in this order from the bottom. A laminated structure of these layers (30A, 32A, 34A) is patterned to form a wiring layer (36). The laminate is subjected to rapid thermal annealing for ohmically contacting the laminate to the n.sup.+ and p.sup.+ -type regions.

    摘要翻译: 半导体器件的n +和p +型区域与具有低布线电阻的层叠布线互连。 在半导体衬底(10)的表面上形成覆盖场绝缘膜(12)的绝缘膜(20)。 在n +和p +型区域的对应的区域,在绝缘膜(20)中形成n +和p +型区域的接触孔。 此后,形成诸如Ti的难熔金属层(30A),用于形成厚度为100埃的欧姆接触,诸如TiN层的杂质扩散防止导电层(32A),难熔金属层或难熔金属硅化物层 (34A)例如W或WSi层,从底部依次顺序地形成。 对这些层(30A,32A,34A)的叠层结构进行构图以形成布线层(36)。 对层压体进行快速热退火,以使其与n +和p +型区域的欧姆接触。

    Method of forming a step compensated semiconductor device
    8.
    发明授权
    Method of forming a step compensated semiconductor device 失效
    形成阶梯补偿半导体器件的方法

    公开(公告)号:US5457070A

    公开(公告)日:1995-10-10

    申请号:US157635

    申请日:1993-11-24

    申请人: Seiji Hirade

    发明人: Seiji Hirade

    摘要: A field insulating film and a gate insulating film are formed on the surface of a semiconductor substrate, and thereafter contact holes for a source and drain are formed in the gate insulating film. Polycrystalline Si containing impurities are deposited on the substrate and patterned to form source, gate, and drain electrode layers. The source and drain regions are formed by implanting impurity ions and doping the impurities in the source and drain electrode layers to the substrate surface. An interlayer insulating film having a flat surface is thereafter formed on the substrate, and contact holes are formed in the interlayer insulating film by selective etching. The etching depths of the contact holes are generally the same, preventing an excessive etching of the contact hole for the gate electrode.

    摘要翻译: 在半导体衬底的表面上形成场绝缘膜和栅极绝缘膜,然后在栅极绝缘膜中形成用于源极和漏极的接触孔。 含有杂质的多晶硅沉积在衬底上并图案化以形成源极,栅极和漏极电极层。 通过注入杂质离子并将源极和漏极电极层中的杂质掺杂到衬底表面来形成源极和漏极区域。 然后在基板上形成具有平坦表面的层间绝缘膜,并且通过选择性蚀刻在层间绝缘膜中形成接触孔。 接触孔的蚀刻深度通常相同,防止对栅电极的接触孔的过度蚀刻。

    Portable mixing recorder and method and program for controlling the same

    公开(公告)号:US07119267B2

    公开(公告)日:2006-10-10

    申请号:US10170973

    申请日:2002-06-13

    IPC分类号: H04B1/00

    摘要: There is provided a portable mixing recorder which enables a user to readily produce music using overdubbing and/or other recording techniques while suppressing degradation of sound quality to the minimum without excessive concern for space restriction. An input analog audio signal is converted to a digital audio signal by an A/D converter section. A decoder reads out a compressed audio signal from an original source file stored in a memory card, and then extends the compressed audio signal to a digital audio signal. A mixing section mixes the digital audio signal obtained by the A/D conversion by the A/D converter section and the digital audio signal obtained by the extension by the decoder. An encoder compresses the digital audio signal obtained by the mixing by the mixing section to a compressed audio signal (mixed file). The mixed file obtained by the compression by the encoder is stored as a new source file in the memory card.

    Semiconductor input protection circuit
    10.
    发明授权
    Semiconductor input protection circuit 失效
    半导体输入保护电路

    公开(公告)号:US07075123B2

    公开(公告)日:2006-07-11

    申请号:US10968685

    申请日:2004-10-19

    IPC分类号: H01L29/74 H01L23/62

    摘要: A lateral PNP transistor PB and a lateral NPN transistor NB are serially connected between an input terminal and a reference potential (ground potential). In the transistor PB, a diode D1 is formed. In the transistor NB, a diode D3 is formed. When an ESD of +2000 V is input, the transistor NB turns on, whereas when an ESD of −2000 V is input, the transistor PB turns on. The level of a positive signal capable of being input is limited by the inverse breakdown voltage (e.g., 18 to 50 V) of the diode D3, whereas the level of a negative signal capable of being input is limited by the inverse breakdown voltage (e.g., 13 to 15 V) of the diode D1.

    摘要翻译: 横向PNP晶体管PB和横向NPN晶体管NB串联连接在输入端子和参考电位(地电位)之间。 在晶体管PB中,形成二极管D 1 1。 在晶体管NB中,形成二极管D 3 3。 当输入+2000V的ESD时,晶体管NB导通,而当输入-2000V的ESD时,晶体管PB导通。 能够输入的正信号的电平受到二极管D 3 3的反向击穿电压(例如,18至50V)的限制,而能够输入的负信号的电平为 受二极管D 1 1的反向击穿电压(例如,13至15V)的限制。