Fabrication method of gallium manganese nitride single crystal nanowire
    1.
    发明授权
    Fabrication method of gallium manganese nitride single crystal nanowire 失效
    氮化镓单晶纳米线的制备方法

    公开(公告)号:US07575631B2

    公开(公告)日:2009-08-18

    申请号:US11314502

    申请日:2005-12-22

    IPC分类号: C01B21/00

    摘要: The present invention relates to a fabrication method of gallium manganese nitride (GaMnN) single crystal nanowire, more particularly to a fabrication method of GaMnN single crystal nanowire substrate by halide vapor phase epitaxy (HVPE) in which such metal components as gallium (Ga) and manganese (Mn) react with such gas components as nitrogen (N2), hydrogen chloride (HCl) and ammonia (NH3), wherein the amount of the gas components are adjusted to control the Mn doping concentration in order to obtain nanowire having a perfect, one-dimensional, single crystal structure without internal defect, concentration of holes, or carriers, and magnetization value of which being determined by the doping concentration and showing ferromagnetism at room temperature, thus being a useful spin transporter in the field of the next-generation spintronics, such as spin-polarized LED, spin-polarized FET, etc.

    摘要翻译: 本发明涉及一种氮化镓(GaMnN)单晶纳米线的制造方法,更具体地说,涉及通过卤化物气相外延(HVPE)制造的GaMnN单晶纳米线基板的制造方法,其中诸如镓(Ga)和 锰(Mn)与氮(N 2),氯化氢(HCl)和氨(NH 3)等气体组分反应,其中调节气体组分的量以控制Mn掺杂浓度,以获得具有完美的纳米线, 一维单晶结构,没有内部缺陷,空穴浓度或载流子,其磁化值由掺杂浓度决定,在室温下显示出铁磁性,因此是下一代领域的有用的自旋转运体 自旋电子学,如自旋极化LED,自旋极化FET等。