公开(公告)号：US20110080511A1

公开(公告)日：2011-04-07

申请号：US12899273

申请日：2010-10-06

申请人： Yun-Ki LEE ,  Duck-Hyung LEE

发明人： Yun-Ki LEE ,  Duck-Hyung LEE

IPC分类号： H04N5/335 ,  H01L27/146

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14687

摘要： An image sensor and a method of fabricating the same are provided. The image sensor includes a substrate having a pixel region including a plurality of unit pixels and a non-pixel region, at least one first well in the non-pixel region, an interconnect structure on a first side of the substrate, and a base well in the non-pixel region and between the first well and a second side of the substrate.

摘要翻译： 提供了图像传感器及其制造方法。 图像传感器包括具有包括多个单位像素和非像素区域的像素区域的基板，非像素区域中的至少一个第一阱，基板的第一侧上的互连结构，以及基底阱 在非像素区域以及衬底的第一阱和第二侧之间。

公开(公告)号：US20080150057A1

公开(公告)日：2008-06-26

申请号：US11951070

申请日：2007-12-05

申请人： Yun-Ki LEE ,  Duck-Hyung LEE ,  Chang-Rok MOON ,  Sung-Ho HWANG ,  Doo-Won KWON ,  Gil-Sang YOO ,  Seung-Hun SHIN

发明人： Yun-Ki LEE ,  Duck-Hyung LEE ,  Chang-Rok MOON ,  Sung-Ho HWANG ,  Doo-Won KWON ,  Gil-Sang YOO ,  Seung-Hun SHIN

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/14623 ,  H01L27/1464 ,  H01L27/14685

摘要： An image sensor and a method of manufacturing the same are disclosed. An image sensor is formed by forming a photoelectric transformation element at a front surface of a semiconductor substrate in an active pixel sensor region and in an optical black region of the semiconductor substrate, subjecting a surface of the semiconductor substrate opposite the front surface to a removal process to create a back surface of the semiconductor substrate, and forming a light blocking film pattern on the back surface in the optical black region. The light blocking film pattern includes an organic material.

摘要翻译： 公开了一种图像传感器及其制造方法。 通过在半导体衬底的有源像素传感器区域和半导体衬底的光学黑色区域中的半导体衬底的前表面处形成光电转换元件来形成图像传感器，使得与前表面相对的半导体衬底的表面被去除 处理以形成半导体衬底的背面，并在光学黑色区域的后表面上形成遮光膜图案。 遮光膜图案包括有机材料。

公开(公告)号：US20110101430A1

公开(公告)日：2011-05-05

申请号：US12940410

申请日：2010-11-05

申请人： Yun-Ki LEE

发明人： Yun-Ki LEE

IPC分类号： H01L31/113

CPC分类号： H01L27/14685 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643

摘要： A CIS and a method of manufacturing the same, the CIS including a substrate having a first surface and second surface opposite thereto, the substrate including an APS array region including a photoelectric transformation element and a peripheral circuit region; an insulating interlayer on the first surface of the substrate and including metal wirings electrically connected to the photoelectric transformation element; a light blocking layer on the peripheral circuit region of the second surface of the substrate, exposing the APS array region, and including a plurality of metal wiring patterns spaced apart from one another to form at least one drainage path along a boundary region between the APS array region and the peripheral circuit region; a color filter layer on the second surface of the substrate covering the APS array region and the light blocking layer; and a microlens on the color filter layer on the APS array region.

摘要翻译： 一种CIS及其制造方法，所述CIS包括具有与其相反的第一表面和第二表面的基板，所述基板包括包括光电转换元件和外围电路区域的APS阵列区域; 在所述基板的第一表面上的绝缘中间层，并且包括电连接到所述光电转换元件的金属布线; 在所述基板的第二表面的外围电路区域上的遮光层，暴露所述APS阵列区域，并且包括彼此间隔开的多个金属布线图案，以形成沿着所述APS之间的边界区域的至少一个排水路径 阵列区域和外围电路区域; 在所述基板的覆盖所述APS阵列区域和所述遮光层的所述第二表面上的滤色器层; 以及APS阵列区域上的滤色器层上的微透镜。

公开(公告)号：US20100171191A1

公开(公告)日：2010-07-08

申请号：US12649451

申请日：2009-12-30

申请人： Yun-Ki LEE

发明人： Yun-Ki LEE

IPC分类号： H01L31/0216 ,  H01L31/14

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14645

摘要： An image sensor includes at least one photoelectric conversion device formed in a silicon substrate, at least one lens formed on one side of the photoelectric conversion device and configured to collect light, a dielectric layer formed on the other side of the photoelectric conversion device and a reflective pattern formed on the dielectric layer. The reflective pattern serves as an electrical circuit interconnection and is configured to reflect the light passing through the dielectric layer such that the light is absorbed to the silicon substrate again.

摘要翻译： 图像传感器包括形成在硅衬底中的至少一个光电转换装置，形成在光电转换装置的一侧上并构成为收集光的至少一个透镜，形成在光电转换装置的另一侧的电介质层和 形成在电介质层上的反射图案。 反射图案用作电路互连，并且被配置为反射通过电介质层的光，使得光再次被吸收到硅衬底。