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15 条记录 (耗时 0.02 秒)

    Surgical Clamp
    2.
    发明申请
    Surgical Clamp 有权
    手术夹

    公开(公告)号：US20120197291A1

    公开(公告)日：2012-08-02

    申请号：US13206573

    申请日：2011-08-10

    申请人： Yung-Fang Tsai ,  Wei-Kai Wang ,  Yung-Fu Liao ,  Din-Hsiang Tseng

    发明人： Yung-Fang Tsai ,  Wei-Kai Wang ,  Yung-Fu Liao ,  Din-Hsiang Tseng

    IPC分类号： A61B17/28

    CPC分类号： A61B17/3403 ,  A61B17/2804 ,  A61B17/2812 ,  A61B17/8866 ,  A61B2017/2808

    摘要： A surgical clamp includes first and second supports respectively having first and second engagement sections. The first and second supports are pivotably connected at a connection by a pivotal portion such that the first and second supports are pivotable about a pivot axis extending through the connection. An opening is defined between the first and second engagement sections for receiving a bone of a patient. A connecting tube includes a first end fixed to the connection. A guiding tube includes an end connected to a second end of the connecting tube and is located in a central plane of the opening between the first and second engagement sections. The central plane includes the pivot axis and has equal spacing to the first and second engagement sections. A sliding rod is fixed to the connecting tube and includes a sliding groove slideably receiving a pole located on the pivotal portion.

    摘要翻译： 手术夹具包括分别具有第一和第二接合部分的第一和第二支撑件。 第一和第二支撑件通过枢转部分在连接处可枢转地连接，使得第一和第二支撑件可围绕延伸穿过连接件的枢转轴线枢转。 在第一和第二接合部分之间限定开口，用于接收患者的骨骼。 连接管包括固定到连接件的第一端。 引导管包括连接到连接管的第二端并且位于第一和第二接合部之间的开口的中心平面中的端部。 中心平面包括枢转轴线并且具有与第一和第二接合部分相等的间隔。 滑动杆固定在连接管上，并包括可滑动地容纳位于枢转部分上的杆的滑动槽。

    Surgical clamp
    3.
    发明授权
    Surgical clamp 有权
    手术钳

    公开(公告)号：US08529575B2

    公开(公告)日：2013-09-10

    申请号：US13206573

    申请日：2011-08-10

    申请人： Yung-Fang Tsai ,  Wei-Kai Wang ,  Yung-Fu Liao ,  Din-Hsiang Tseng

    发明人： Yung-Fang Tsai ,  Wei-Kai Wang ,  Yung-Fu Liao ,  Din-Hsiang Tseng

    IPC分类号： A61B17/17

    CPC分类号： A61B17/3403 ,  A61B17/2804 ,  A61B17/2812 ,  A61B17/8866 ,  A61B2017/2808

    摘要： A surgical clamp includes first and second supports respectively having first and second engagement sections. The first and second supports are pivotably connected at a connection by a pivotal portion such that the first and second supports are pivotable about a pivot axis extending through the connection. An opening is defined between the first and second engagement sections for receiving a bone of a patient. A connecting tube includes a first end fixed to the connection. A guiding tube includes an end connected to a second end of the connecting tube and is located in a central plane of the opening between the first and second engagement sections. The central plane includes the pivot axis and has equal spacing to the first and second engagement sections. A sliding rod is fixed to the connecting tube and includes a sliding groove slideably receiving a pole located on the pivotal portion.

    摘要翻译： 手术夹具包括分别具有第一和第二接合部分的第一和第二支撑件。 第一和第二支撑件通过枢转部分在连接处可枢转地连接，使得第一和第二支撑件可围绕延伸穿过连接件的枢转轴线枢转。 在第一和第二接合部分之间限定开口，用于接收患者的骨骼。 连接管包括固定到连接件的第一端。 引导管包括连接到连接管的第二端并且位于第一和第二接合部之间的开口的中心平面中的端部。 中心平面包括枢转轴线并且具有与第一和第二接合部分相等的间隔。 滑动杆固定在连接管上，并包括可滑动地容纳位于枢转部分上的杆的滑动槽。

    Semiconductor layered structure
    4.
    发明申请
    Semiconductor layered structure 审中-公开
    半导体分层结构

    公开(公告)号：US20080006829A1

    公开(公告)日：2008-01-10

    申请号：US11646319

    申请日：2006-12-28

    申请人： Dong-Sing Wuu ,  Ray-Hua Horng ,  Wei-Kai Wang ,  Kuo-Sheng Wen

    发明人： Dong-Sing Wuu ,  Ray-Hua Horng ,  Wei-Kai Wang ,  Kuo-Sheng Wen

    IPC分类号： H01L29/15 ,  H01L31/0256

    CPC分类号： H01L21/02647 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02642 ,  H01L33/007

    摘要： A semiconductor structure includes: a base layer formed with an array of recesses; a first epitaxial layer stacked on the base layer and extending into the recesses in the base layer; a patterned mask layer stacked on the first epitaxial layer; and a second epitaxial layer having a first portion that corresponds to the recesses in the base layer and that extends through the mask layer to contact the first epitaxial layer, and a second portion that is stacked on the mask layer.

    摘要翻译： 半导体结构包括：形成有凹槽阵列的基底层; 第一外延层，堆叠在基底层上并延伸到基底层的凹部中; 层叠在所述第一外延层上的图案化掩模层; 以及第二外延层，其具有对应于所述基底层中的所述凹部的第一部分，并且延伸穿过所述掩模层以接触所述第一外延层，以及层叠在所述掩模层上的第二部分。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    5.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
    半导体发光器件

    公开(公告)号：US20090212312A1

    公开(公告)日：2009-08-27

    申请号：US12269499

    申请日：2008-11-12

    申请人： Tzong-Liang TSAI ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

    发明人： Tzong-Liang TSAI ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

    IPC分类号： H01L33/00

    CPC分类号： H01L33/44 ,  H01L2933/0091

    摘要： The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. Each bump structure is made of ITO, SiO2, SiN, ZnO, polymide, BCB, SOG, InO, or SnO.

    摘要翻译： 本发明公开了一种半导体发光器件，其包括基板，第一导电型半导体材料层，第二导电型半导体材料层，发光层，第一电极，第二电极和多个凸块 结构。 第一导电型半导体材料层形成在基板上，并且具有包括第一区域和与第一区域不同的第二区域的上表面。 第一电极形成在第一区域上。 在第二区域上形成发光层和第二导电型半导体材料层。 凸起结构形成在第一导电类型半导体材料层的上表面上，并且在第一区域和第二区域之间。 每个凸块结构由ITO，SiO2，SiN，ZnO，聚酰亚胺，BCB，SOG，InO或SnO制成。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    6.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权

    公开(公告)号：US20090212311A1

    公开(公告)日：2009-08-27

    申请号：US12184933

    申请日：2008-08-01

    申请人： Tzong-Liang Tsai ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

    发明人： Tzong-Liang Tsai ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

    IPC分类号： H01L33/00

    CPC分类号： H01L33/44 ,  H01L2933/0091

    摘要： The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. Each bump structure is made of ITO, SiO2, SiN, ZnO, polymide, BCB, SOG, InO, or SnO.

    Semiconductor light-emitting device
    7.
    发明授权
    Semiconductor light-emitting device 有权
    半导体发光装置

    公开(公告)号：US07923744B2

    公开(公告)日：2011-04-12

    申请号：US12755019

    申请日：2010-04-06

    申请人： Tzong-Liang Tsai ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

    发明人： Tzong-Liang Tsai ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

    IPC分类号： H01L29/26

    CPC分类号： H01L33/44 ,  H01L33/20 ,  H01L2933/0091

    摘要： The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. At least one recess is formed in the sidewall of each bump structure. Alternatively, the sidewall of each bump structure has a curved contour.

    摘要翻译： 本发明公开了一种半导体发光器件，其包括基板，第一导电型半导体材料层，第二导电型半导体材料层，发光层，第一电极，第二电极和多个凸块 结构。 第一导电型半导体材料层形成在基板上，并且具有包括第一区域和与第一区域不同的第二区域的上表面。 第一电极形成在第一区域上。 在第二区域上形成发光层和第二导电型半导体材料层。 凸起结构形成在第一导电类型半导体材料层的上表面上，并且在第一区域和第二区域之间。 在每个凸块结构的侧壁中形成至少一个凹部。 或者，每个凸块结构的侧壁具有弯曲的轮廓。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    8.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20100230706A1

    公开(公告)日：2010-09-16

    申请号：US12755019

    申请日：2010-04-06

    申请人： Tzong Liang Tsai ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

    发明人： Tzong Liang Tsai ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

    IPC分类号： H01L33/02

    CPC分类号： H01L33/44 ,  H01L33/20 ,  H01L2933/0091

    摘要： The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. At least one recess is formed in the sidewall of each bump structure. Alternatively, the sidewall of each bump structure has a curved contour.

    摘要翻译： 本发明公开了一种半导体发光器件，其包括基板，第一导电型半导体材料层，第二导电型半导体材料层，发光层，第一电极，第二电极和多个凸块 结构。 第一导电型半导体材料层形成在基板上，并且具有包括第一区域和与第一区域不同的第二区域的上表面。 第一电极形成在第一区域上。 在第二区域上形成发光层和第二导电型半导体材料层。 凸起结构形成在第一导电类型半导体材料层的上表面上，并且在第一区域和第二区域之间。 在每个凸块结构的侧壁中形成至少一个凹部。 或者，每个凸块结构的侧壁具有弯曲的轮廓。

    Semiconductor light-emitting device with high light-extraction efficiency
    9.
    发明授权
    Semiconductor light-emitting device with high light-extraction efficiency 有权
    半导体发光器件具有较高的光提取效率

    公开(公告)号：US07956373B2

    公开(公告)日：2011-06-07

    申请号：US12081595

    申请日：2008-04-17

    申请人： Wei-Kai Wang ,  Su-Hui Lin ,  Wen-Chung Shih

    发明人： Wei-Kai Wang ,  Su-Hui Lin ,  Wen-Chung Shih

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/22

    摘要： The invention discloses a semiconductor light-emitting device and a fabricating method thereof. The semiconductor light-emitting device according to the invention includes a substrate, a multi-layer structure, a top-most layer, and at least one electrode. The multi-layer structure is formed on the substrate and includes a light-emitting region. The top-most layer is formed on the multi-layer structure, and the lower part of the sidewall of the top-most layer exhibits a first surface morphology relative to a first pattern. In addition, the upper part of the sidewall of the top-most layer exhibits a second surface morphology relative to a second pattern. The first pattern is different from the second pattern. The at least one electrode is formed on the top-most layer. Therefore, the sidewall of the semiconductor light-emitting device according to the invention exhibits a surface morphology, which increases the light extraction area of the sidewall, and consequently enhances the light extraction efficiency of the semiconductor light-emitting device.

    摘要翻译： 本发明公开了一种半导体发光器件及其制造方法。 根据本发明的半导体发光器件包括衬底，多层结构，最顶层和至少一个电极。 多层结构形成在基板上并且包括发光区域。 最顶层形成在多层结构上，最顶层的侧壁的下部表现出相对于第一图案的第一表面形态。 此外，最顶层的侧壁的上部相对于第二图案显示出第二表面形态。 第一种模式与第二种模式不同。 至少一个电极形成在最上层。 因此，根据本发明的半导体发光器件的侧壁呈现表面形态，这增加了侧壁的光提取面积，从而提高了半导体发光器件的光提取效率。

    Semiconductor light-emitting device
    10.
    发明授权
    Semiconductor light-emitting device 有权
    半导体发光装置

    公开(公告)号：US07768027B2

    公开(公告)日：2010-08-03

    申请号：US12184933

    申请日：2008-08-01

    申请人： Tzong-Liang Tsai ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

    发明人： Tzong-Liang Tsai ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

    IPC分类号： H01L29/26

    CPC分类号： H01L33/44 ,  H01L2933/0091

    摘要： The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. Each bump structure is made of ITO, SiO2, SiN, ZnO, polymide, BCB, SOG, InO, or SnO.

    摘要翻译： 本发明公开了一种半导体发光器件，其包括基板，第一导电型半导体材料层，第二导电型半导体材料层，发光层，第一电极，第二电极和多个凸块 结构。 第一导电型半导体材料层形成在基板上，并且具有包括第一区域和与第一区域不同的第二区域的上表面。 第一电极形成在第一区域上。 在第二区域上形成发光层和第二导电型半导体材料层。 凸起结构形成在第一导电类型半导体材料层的上表面上，并且在第一区域和第二区域之间。 每个凸块结构由ITO，SiO2，SiN，ZnO，聚酰亚胺，BCB，SOG，InO或SnO制成。