Mounting structure providing electrical surge protection
    1.
    发明授权
    Mounting structure providing electrical surge protection 有权
    安装结构提供电涌保护

    公开(公告)号:US08030575B2

    公开(公告)日:2011-10-04

    申请号:US11465241

    申请日:2006-08-17

    IPC分类号: H05K1/03

    摘要: A solution for protecting an electronic device from an electrical surge using a mounting structure is provided. In particular, the mounting structure comprises a conductive material and is electrically connected to the protected electrical device. The conductive material and/or mounting structure can have one or more properties that prevent the mounting structure from adversely impacting operation of the electronic device during normal operation, but enables the mounting structure to provide an alternative electrical path during the electrical surge.

    摘要翻译: 提供了一种使用安装结构保护电子设备免受电涌的解决方案。 特别地,安装结构包括导电材料并且电连接到受保护的电气设备。 导电材料和/或安装结构可以具有防止安装结构在正常操作期间不利地影响电子设备的操作的一个或多个特性,但是使安装结构能够在电涌期间提供替代的电路径。

    Ultraviolet radiation sterilization
    3.
    发明授权
    Ultraviolet radiation sterilization 有权
    紫外线辐射灭菌

    公开(公告)号:US07634996B2

    公开(公告)日:2009-12-22

    申请号:US11674494

    申请日:2007-02-13

    IPC分类号: A61M16/00

    CPC分类号: A61L2/10 A61M16/04

    摘要: A solution for sterilizing one or more hollow components of a device, such as a medical device, is provided. Ultraviolet radiation having one or more predominant wavelength(s) and a sufficient dose is generated and directed to an interior side of the hollow component(s). The predominant wavelength(s) is/are selected to harm one or more target organisms that may be present on the interior side. The ultraviolet radiation can be delivered by a structure that is periodically inserted and retracted into the hollow component. The structure can be configured to provide additional cleaning capability, such as suction, for removing matter that may be present in the hollow component.

    摘要翻译: 提供了用于对诸如医疗装置的装置的一个或多个中空部件进行灭菌的解决方案。 产生具有一个或多个主要波长和足够剂量的紫外线辐射并将其引导到中空部件的内侧。 选择主要波长以损害可能存在于内侧的一种或多种靶生物体。 紫外线辐射可以通过周期性地插入和缩回到中空部件中的结构传送。 该结构可以构造成提供额外的清洁能力,例如抽吸,用于去除可能存在于中空部件中的物质。

    ORGANISM GROWTH SUPPRESSION USING ULTRAVIOLET RADIATION
    4.
    发明申请
    ORGANISM GROWTH SUPPRESSION USING ULTRAVIOLET RADIATION 有权
    使用超紫外线辐射的有机生长抑制

    公开(公告)号:US20070205382A1

    公开(公告)日:2007-09-06

    申请号:US11380512

    申请日:2006-04-27

    IPC分类号: A61L2/10 A61L9/20

    CPC分类号: A61L2/10 A61L2/23

    摘要: A solution for suppressing organism growth using ultraviolet radiation generated by solid state ultraviolet radiation emitters, such as ultraviolet diodes is provided. The invention includes a connection structure that includes a plurality of solid state ultraviolet radiation emitters disposed thereon. Each of the plurality of solid state ultraviolet radiation emitters emits ultraviolet radiation having a wavelength less than or equal to four hundred nanometers to harm a target organism that may be present on a surface. In one embodiment, the connection structure comprises a two-dimensional mesh that may be placed adjacent an air filter, incorporated in a cover, and/or moved with respect to a surface, such as the interior of an air duct. In this manner, the invention can suppress and/or prevent the growth of organisms, such as biofilms and mold, in locations that are susceptible to such growth.

    摘要翻译: 提供了一种使用紫外线二极管等固体紫外线辐射发射体产生的紫外线照射来抑制生物生长的方法。 本发明包括一种连接结构,其包括设置在其上的多个固态紫外线辐射发射器。 多个固态紫外线辐射发射体中的每一个发射波长小于或等于四百纳米的紫外线辐射,以损害可能存在于表面上的靶生物体。 在一个实施例中,连接结构包括二维网格,其可以放置在与空气过滤器相邻的地方,并入和/或相对于诸如空气管道的内部的表面移动。 以这种方式,本发明可以抑制和/或防止生物体如生物膜和霉菌在易受这种生长影响的位置中的生长。

    Light emitting system with dual use light element
    5.
    发明授权
    Light emitting system with dual use light element 有权
    具有双重使用光源的发光系统

    公开(公告)号:US08395324B2

    公开(公告)日:2013-03-12

    申请号:US12763674

    申请日:2010-04-20

    IPC分类号: H05B37/02

    CPC分类号: H05B33/0863 H05B33/0866

    摘要: A solution is provided in which one or more of a plurality of light elements is alternately operated as a light emitting element and a light detecting element. For example, a system can operate a light element as a light detecting element while operating at least one other light element as a light emitting element in order to manage operation of the light elements to generate light having a set of desired attributes, evaluating an operating condition of the other light element(s), and/or the like.

    摘要翻译: 提供了一种解决方案,其中多个光元件中的一个或多个交替地作为发光元件和光检测元件操作。 例如,系统可以操作作为光检测元件的光元件,同时操作至少一个其它光元件作为发光元件,以便管理光元件的操作以产生具有一组所需属性的光,评估操作 另一个光元件的状态和/或类似物。

    Semiconductor sensing device
    6.
    发明申请
    Semiconductor sensing device 有权
    半导体感测装置

    公开(公告)号:US20050110053A1

    公开(公告)日:2005-05-26

    申请号:US10721803

    申请日:2003-11-25

    摘要: A semiconductor sensing device in which a sensing layer is exposed to a medium being tested in an area below and/or adjacent to a contact. In one embodiment, the device comprises a field effect transistor in which the sensing layer is disposed below a gate contact. The sensing layer is exposed to the medium by one or more perforations that are included in the gate contact and/or one or more layers disposed above the sensing layer. The sensing layer can comprise a dielectric layer, a semiconductor layer, or the like.

    摘要翻译: 一种半导体感测装置,其中感测层暴露于在接触件下方和/或邻近的区域内被测试的介质。 在一个实施例中,该器件包括场效应晶体管,其中感测层设置在栅极触点下方。 感测层通过包括在栅极接触中的一个或多个穿孔和/或设置在感测层上方的一个或多个层而暴露于介质。 感测层可以包括电介质层,半导体层等。

    Shaped contact layer for light emitting heterostructure
    7.
    发明授权
    Shaped contact layer for light emitting heterostructure 有权
    用于发光异质结构的成形接触层

    公开(公告)号:US08981417B2

    公开(公告)日:2015-03-17

    申请号:US13048233

    申请日:2011-03-15

    IPC分类号: H01L33/32 H01L33/38 H01S5/042

    CPC分类号: H01L33/38 H01S5/0425

    摘要: An improved light emitting heterostructure and/or device is provided, which includes a contact layer having a contact shape comprising one of: a clover shape with at least a third order axis of symmetry or an H-shape. The use of these shapes can provide one or more improved operating characteristics for the light emitting devices. The contact shapes can be used, for example, with contact layers on nitride-based devices that emit light having a wavelength in at least one of: the blue spectrum or the deep ultraviolet (UV) spectrum.

    摘要翻译: 提供了一种改进的发光异质结构和/或器件,其包括具有接触形状的接触层,接触形状包括具有至少三阶对称轴或H形的三叶形。 使用这些形状可以为发光器件提供一个或多个改进的操作特性。 接触形状可以例如使用发射具有以下蓝色光谱或深紫外(UV)光谱中的至少一个的波长的光的氮化物基器件上的接触层。

    Shaped contact layer for light emitting heterostructure
    8.
    发明授权
    Shaped contact layer for light emitting heterostructure 有权
    用于发光异质结构的成形接触层

    公开(公告)号:US07928451B2

    公开(公告)日:2011-04-19

    申请号:US11626999

    申请日:2007-01-25

    IPC分类号: H01L33/00

    CPC分类号: H01L33/38 H01S5/0425

    摘要: An improved light emitting heterostructure and/or device is provided, which includes a contact layer having a contact shape comprising one of: a clover shape with at least a third order axis of symmetry or an H-shape. The use of these shapes can provide one or more improved operating characteristics for the light emitting devices. The contact shapes can be used, for example, with contact layers on nitride-based devices that emit light having a wavelength in at least one of: the blue spectrum or the deep ultraviolet (UV) spectrum.

    摘要翻译: 提供了一种改进的发光异质结构和/或器件,其包括具有接触形状的接触层,接触形状包括具有至少三阶对称轴或H形的三叶形。 使用这些形状可以为发光器件提供一个或多个改进的操作特性。 接触形状可以例如使用发射具有以下蓝色光谱或深紫外(UV)光谱中的至少一个的波长的光的氮化物基器件上的接触层。

    Semiconductor sensing device
    9.
    发明授权
    Semiconductor sensing device 有权
    半导体感测装置

    公开(公告)号:US07868399B2

    公开(公告)日:2011-01-11

    申请号:US12106597

    申请日:2008-04-21

    IPC分类号: H01L23/58

    摘要: A semiconductor sensing device in which a sensing layer is exposed to a medium being tested in an area below and/or adjacent to a contact. In one embodiment, the device comprises a field effect transistor in which the sensing layer is disposed below a gate contact. The sensing layer is exposed to the medium by one or more perforations that are included in the gate contact and/or one or more layers disposed above the sensing layer. The sensing layer can comprise a dielectric layer, a semiconductor layer, or the like.

    摘要翻译: 一种半导体感测装置,其中感测层暴露于在接触件下方和/或邻近的区域内被测试的介质。 在一个实施例中,该器件包括场效应晶体管,其中感测层设置在栅极触点下方。 感测层通过包括在栅极接触中的一个或多个穿孔和/或设置在感测层上方的一个或多个层而暴露于介质。 感测层可以包括电介质层,半导体层等。

    SHAPED CONTACT LAYER FOR LIGHT EMITTING HETEROSTRUCTURE
    10.
    发明申请
    SHAPED CONTACT LAYER FOR LIGHT EMITTING HETEROSTRUCTURE 审中-公开
    形状接触层用于发光结构

    公开(公告)号:US20110163335A1

    公开(公告)日:2011-07-07

    申请号:US13048233

    申请日:2011-03-15

    IPC分类号: H01L33/32

    CPC分类号: H01L33/38 H01S5/0425

    摘要: An improved light emitting heterostructure and/or device is provided, which includes a contact layer having a contact shape comprising one of: a clover shape with at least a third order axis of symmetry or an H-shape. The use of these shapes can provide one or more improved operating characteristics for the light emitting devices. The contact shapes can be used, for example, with contact layers on nitride-based devices that emit light having a wavelength in at least one of: the blue spectrum or the deep ultraviolet (UV) spectrum.

    摘要翻译: 提供了一种改进的发光异质结构和/或器件,其包括具有接触形状的接触层,接触形状包括具有至少三阶对称轴或H形的三叶形。 使用这些形状可以为发光器件提供一个或多个改进的操作特性。 接触形状可以例如使用发射具有以下蓝色光谱或深紫外(UV)光谱中的至少一个的波长的光的氮化物基器件上的接触层。