公开(公告)号：US20070205181A1

公开(公告)日：2007-09-06

申请号：US11681550

申请日：2007-03-02

申请人： Yutaka Asou ,  Masatoshi Shiraishi

发明人： Yutaka Asou ,  Masatoshi Shiraishi

IPC分类号： C23F1/00 ,  B44C1/22

CPC分类号： G03F7/40 ,  G02F1/1303 ,  H01L21/0273 ,  H01L29/66765 ,  H01L29/78603

摘要： Disclosed is a substrate processing method that dissolves and deforms a photoresist film having a first pattern formed on a substrate to reshape the resist film into a second pattern. The method includes: evacuating a processing chamber, thereby reducing an internal pressure of the processing chamber from a standard pressure to a first target pressure lower than the standard pressure; introducing a solvent vapor-containing atmosphere into the processing chamber, thereby bringing the internal pressure back to the standard pressure; dissolving the resist film by a solvent contained in the solvent vapor-containing atmosphere; and evacuating a processing chamber, thereby reducing the internal pressure to a second target pressure higher than the first target pressure and lower than the standard pressure and discharging the solvent vapor-containing atmosphere from the processing chamber. Owing to the relatively low second target pressure, undesirable deformation of the resist film or defects in the resist film due to rapid evaporation of the solvent penetrated in the resist film can be prevented.

摘要翻译： 公开了一种基板处理方法，其使形成在基板上的第一图案的光致抗蚀剂膜溶解并变形，将抗蚀剂膜重新形成为第二图案。 该方法包括：抽空处理室，从而将处理室的内部压力从标准压力降低到低于标准压力的第一目标压力; 将含有溶剂蒸气的气氛引入处理室，从而使内部压力回到标准压力; 用包含在含溶剂蒸气的气氛中的溶剂溶解抗蚀剂膜; 并且排出处理室，从而将内部压力降低到高于第一目标压力并低于标准压力的第二目标压力，并将来自处理室的含溶剂蒸气的气体排出。 由于第二目标压力相对较低，可以防止抗蚀剂膜的不期望的变形或抗蚀剂膜中渗透的溶剂的快速蒸发引起的抗蚀剂膜中的缺陷。

公开(公告)号：US07678532B2

公开(公告)日：2010-03-16

申请号：US11680957

申请日：2007-03-01

申请人： Yutaka Asou ,  Masatoshi Shiraishi

发明人： Yutaka Asou ,  Masatoshi Shiraishi

IPC分类号： G03F7/00 ,  G03F7/26 ,  G03F7/40 ,  G03F7/36

CPC分类号： G03F7/40

摘要： The present invention provides a method of processing a substrate, comprising a reflow process for forming a desired pattern by dissolving a resist pattern, whereby occurrence of defectives, such as disconnection, can be prevented, and a pattern having an appropriate uniformity can be formed efficiently on each predetermined area desired to be masked. From a photoresist pattern 206 including thicker film portions and thinner film portions, the thinner film portions are removed by a re-developing process. Next, the photoresist so formed by the re-developing process on a backing layer 205 is dissolved such that it passes through a stepped portion 205a formed at each edge portion 205b of the backing layer 205, thereby masking a predetermined area Tg. Upon masking the predetermined area Tg, the photoresist 206 is dissolved in a first dissolving-speed mode on the backing layer 205, and then after the photoresist to be dissolved reaches the stepped portion 205a, the photoresist 206 is dissolved in a second dissolving-speed mode which is slower than the first dissolving-speed mode.

摘要翻译： 本发明提供了一种处理衬底的方法，包括通过溶解抗蚀剂图案形成所需图案的回流工艺，由此可以防止诸如断开的缺陷的发生，并且可以有效地形成具有适当均匀性的图案 在希望被掩蔽的每个预定区域上。 从包括较厚膜部分和较薄膜部分的光致抗蚀剂图案206，通过重新显影工艺除去较薄的膜部分。 接下来，通过在背衬层205上的再显影工艺形成的光致抗蚀剂被溶解，使得其通过形成在背衬层205的每个边缘部分205b处的阶梯部分205a，从而掩蔽预定区域Tg。 在掩蔽预定区域Tg时，光致抗蚀剂206以第一溶解速度模式溶解在背衬层205上，然后在待溶解的光致抗蚀剂到达阶梯部分205a之后，光致抗蚀剂206以第二溶解速度 模式比第一溶解速度模式慢。

公开(公告)号：US07670960B2

公开(公告)日：2010-03-02

申请号：US11681550

申请日：2007-03-02

申请人： Yutaka Asou ,  Masatoshi Shiraishi

发明人： Yutaka Asou ,  Masatoshi Shiraishi

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： G03F7/40 ,  G02F1/1303 ,  H01L21/0273 ,  H01L29/66765 ,  H01L29/78603

摘要： Disclosed is a substrate processing method that dissolves and deforms a photoresist film having a first pattern formed on a substrate to reshape the resist film into a second pattern. The method includes: evacuating a processing chamber, thereby reducing an internal pressure of the processing chamber from a standard pressure to a first target pressure lower than the standard pressure; introducing a solvent vapor-containing atmosphere into the processing chamber, thereby bringing the internal pressure back to the standard pressure; dissolving the resist film by a solvent contained in the solvent vapor-containing atmosphere; and evacuating a processing chamber, thereby reducing the internal pressure to a second target pressure higher than the first target pressure and lower than the standard pressure and discharging the solvent vapor-containing atmosphere from the processing chamber. Owing to the relatively low second target pressure, undesirable deformation of the resist film or defects in the resist film due to rapid evaporation of the solvent penetrated in the resist film can be prevented.

摘要翻译： 公开了一种基板处理方法，其使形成在基板上的第一图案的光致抗蚀剂膜溶解并变形，将抗蚀剂膜重新形成为第二图案。 该方法包括：抽空处理室，从而将处理室的内部压力从标准压力降低到低于标准压力的第一目标压力; 将含有溶剂蒸气的气氛引入处理室，从而使内部压力回到标准压力; 用包含在含溶剂蒸气的气氛中的溶剂溶解抗蚀剂膜; 并且排出处理室，从而将内部压力降低到高于第一目标压力并低于标准压力的第二目标压力，并将来自处理室的含溶剂蒸气的气体排出。 由于第二目标压力相对较低，可以防止抗蚀剂膜的不期望的变形或抗蚀剂膜中渗透的溶剂的快速蒸发引起的抗蚀剂膜中的缺陷。

公开(公告)号：US20070207405A1

公开(公告)日：2007-09-06

申请号：US11680957

申请日：2007-03-01

申请人： Yutaka Asou ,  Masatoshi Shiraishi

发明人： Yutaka Asou ,  Masatoshi Shiraishi

IPC分类号： G03C1/00

CPC分类号： G03F7/40

摘要： The present invention provides a method of processing a substrate, comprising a reflow process for forming a desired pattern by dissolving a resist pattern, whereby occurrence of defectives, such as disconnection, can be prevented, and a pattern having an appropriate uniformity can be formed efficiently on each predetermined area desired to be masked. From a photoresist pattern 206 including thicker film portions and thinner film portions, the thinner film portions are removed by a re-developing process. Next, the photoresist so formed by the re-developing process on a backing layer 205 is dissolved such that it passes through a stepped portion 205a formed at each edge portion 205b of the backing layer 205, thereby masking a predetermined area Tg. Upon masking the predetermined area Tg, the photoresist 206 is dissolved in a first dissolving-speed mode on the backing layer 205, and then after the photoresist to be dissolved reaches the stepped portion 205a, the photoresist 206 is dissolved in a second dissolving-speed mode which is slower than the first dissolving-speed mode.

摘要翻译： 本发明提供了一种处理衬底的方法，其包括通过溶解抗蚀剂图案形成所需图案的回流工艺，由此可以防止诸如断开的缺陷的发生，并且可以有效地形成具有适当均匀性的图案 在希望被掩蔽的每个预定区域上。 从包括较厚膜部分和较薄膜部分的光致抗蚀剂图案206，通过重新显影工艺除去较薄的膜部分。 接下来，通过在背衬层205上的再显影工艺形成的光致抗蚀剂被溶解，使得其通过形成在背衬层205的每个边缘部分205b处的阶梯部分205a，从而掩蔽预定区域Tg。 在掩蔽预定区域Tg时，光致抗蚀剂206以第一溶解速度模式溶解在背衬层205上，然后在待溶解的光致抗蚀剂到达阶梯部分205a之后，光致抗蚀剂206溶解在第二溶解速度模式中， 速度模式比第一溶解速度模式慢。

公开(公告)号：US07727895B2

公开(公告)日：2010-06-01

申请号：US11693244

申请日：2007-03-29

申请人： Yutaka Asou

发明人： Yutaka Asou

IPC分类号： H01L21/311

CPC分类号： H01L21/67063

摘要： Disclosed is a substrate processing method that dissolves and deforms a photoresist film having a first pattern formed on a substrate to reshape the resist film into a second pattern During the reflow process, an atmosphere of a thinner vapor-containing gas is established in a processing chamber. A substrate is placed on a temperature adjusting plate. The target temperature of the temperature adjusting plate is set and controlled by a control unit, and the temperature of the temperature adjusting plate is controlled by a temperature regulator based on the target temperature set by the control unit The control unit set and controls the target temperature so that it meets the following requirement: the atmospheric temperature≦the target temperature≦(the atmospheric temperature+2° C.). Due to the above, the reflowing of the resist can be performed stably, while achieving a satisfactory reflow rate although it is somewhat low.

摘要翻译： 公开了一种基板处理方法，其使形成在基板上的第一图案的光致抗蚀剂膜溶解并变形以将抗蚀剂膜重新形成第二图案。在回流工艺期间，在处理室中建立较薄的含蒸汽气体的气氛 。 将基板放置在温度调节板上。 温度调节板的目标温度由控制单元设定和控制，温度调节板的温度由温度调节器基于由控制单元设定的目标温度来控制。控制单元设定并控制目标温度 使其满足以下要求：大气温度＆nlE;目标温度＆nlE;（大气温度+ 2℃）。 由于上述原因，可以稳定地进行抗蚀剂的回流，同时尽管达到令人满意的回流速度，但是略低。

公开(公告)号：US20080032500A1

公开(公告)日：2008-02-07

申请号：US11693244

申请日：2007-03-29

申请人： Yutaka Asou

发明人： Yutaka Asou

IPC分类号： H01L21/00

CPC分类号： H01L21/67063

摘要： Disclosed is a substrate processing method that dissolves and deforms a photoresist film having a first pattern formed on a substrate to reshape the resist film into a second pattern During the reflow process, an atmosphere of a thinner vapor-containing gas is established in a processing chamber. A substrate is placed on a temperature adjusting plate. The target temperature of the temperature adjusting plate is set and controlled by a control unit, and the temperature of the temperature adjusting plate is controlled by a temperature regulator based on the target temperature set by the control unit The control unit set and controls the target temperature so that it meets the following requirement: the atmospheric temperature≦the target temperature≦(the atmospheric temperature+2° C.). Due to the above, the reflowing of the resist can be performed stably, while achieving a satisfactory reflow rate although it is somewhat low.

摘要翻译： 公开了一种基板处理方法，其使形成在基板上的第一图案的光致抗蚀剂膜溶解并变形以将抗蚀剂膜重新形成第二图案。在回流工艺期间，在处理室中建立较薄的含蒸汽气体的气氛 。 将基板放置在温度调节板上。 温度调节板的目标温度由控制单元设定和控制，温度调节板的温度由温度调节器基于由控制单元设定的目标温度来控制。控制单元设定并控制目标温度 使其满足以下要求：大气温度<=目标温度<=（大气温度+ 2℃）。 由于上述原因，可以稳定地进行抗蚀剂的回流，同时尽管达到令人满意的回流速度，但是略低。

公开(公告)号：US20070232080A1

公开(公告)日：2007-10-04

申请号：US11727754

申请日：2007-03-28

申请人： Yutaka Asou

发明人： Yutaka Asou

IPC分类号： H01L21/31

CPC分类号： H01L21/0273 ,  H01L29/41733 ,  H01L29/66765

摘要： A reflow method includes preparing a to-be-processed object, which includes a first layer, a second layer formed in an upper layer to the first layer, and a resist film, which is directly on the second layer and has a pattern allowing formation of an exposure region in which the first layer is exposed and a coverage region in which the first layer is covered, wherein said resist film has an end thereof protruding out further above the exposure region than the edge of the second layer. The resist film has a shape protruding out further above the exposure region than the edge of the second layer. The method also includes covering a part or all of the exposure region by softening and reflowing the resist film.

摘要翻译： 回流方法包括制备被处理物体，其包括第一层，形成在第一层的上层中的第二层和直接在第二层上并具有允许形成的图案的抗蚀剂膜 其中所述第一层被曝光的曝光区域和覆盖所述第一层的覆盖区域，其中所述抗蚀剂膜的端部比所述第二层的边缘更远地突出在所述曝光区域的上方。 抗蚀剂膜具有比第二层的边缘更远地突出于曝光区域的形状。 该方法还包括通过软化和回流抗蚀剂膜来覆盖曝光区域的一部分或全部。

公开(公告)号：US20070231975A1

公开(公告)日：2007-10-04

申请号：US11727745

申请日：2007-03-28

申请人： Yutaka Asou

发明人： Yutaka Asou

IPC分类号： H01L21/84 ,  H01L21/47

CPC分类号： H01L29/66765 ,  H01L27/1288

摘要： A to-be-processed object including an underlying layer and a resist film giving a pattern allowing formation of an exposure region in which the underlying layer is exposed at an upper layer to the underlying layer and a coverage region in which the underlying layer is covered is prepared. A reflow method is provided which softens the resist film to be in a flowing state, resulting in a part of or all of the exposure region covered by it. The resist film has different regions in thickness of at least a thick region and a thin region relatively thinner than the thick region.

摘要翻译： 待处理物体包括下层和抗蚀剂膜，其形成允许形成曝光区域的图案，其中底层在上层暴露于下层，覆盖区域覆盖下层 准备好了 提供了一种使抗蚀剂膜软化成流动状态的回流方法，导致其覆盖的一部分或全部曝光区域。 抗蚀剂膜具有至少厚的区域的厚度不同的区域和比厚区域相对薄的薄区域。