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    MEMORY ELEMENT AND MEMORY DEVICE
    3.
    发明申请
    MEMORY ELEMENT AND MEMORY DEVICE 有权
    存储元件和存储器件

    公开(公告)号：US20120294079A1

    公开(公告)日：2012-11-22

    申请号：US13465755

    申请日：2012-05-07

    申请人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida ,  Tetsuya Asayama

    发明人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida ,  Tetsuya Asayama

    IPC分类号： G11C11/15

    CPC分类号： H01L43/10 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  Y10S977/933 ,  Y10S977/935

    摘要： A memory element including a memory layer to hold the information by the magnetization state of a magnetic substance, a magnetization pinned layer having magnetization serving as a reference of the information stored in the memory layer, an intermediate layer formed from a nonmagnetic substance disposed between the memory layer and the magnetization pinned layer, a magnetic coupling layer disposed adjoining the magnetization pinned layer and opposing to the intermediate layer, and a high coercive force layer disposed adjoining the magnetic coupling layer, wherein the information is stored by reversing magnetization of the memory layer, making use of spin torque magnetization reversal generated along with a current passing in the lamination direction of the layered structure including the memory layer, the intermediate layer, and the magnetization pinned layer, and the magnetic coupling layer has a two-layer laminate structure.

    摘要翻译： 一种存储元件，包括通过磁性物质的磁化状态保持信息的存储层，具有作为存储在存储层中的信息的参考的磁化的磁化固定层，由设置在存储层中的非磁性物质形成的中间层 存储层和磁化固定层，邻近所述磁化被钉扎层并与所述中间层相对设置的磁耦合层和邻近所述磁耦合层设置的高矫顽力层，其中所述信息通过反转存储层的磁化而被存储 利用随着在包括存储层，中间层和磁化被钉扎层的层叠方向的层叠方向上流过的电流产生的自旋转矩磁化反转，并且磁耦合层具有两层层叠结构。

    Memory element and memory device
    5.
    发明授权
    Memory element and memory device 有权
    存储器元件和存储器件

    公开(公告)号：US08923037B2

    公开(公告)日：2014-12-30

    申请号：US13465755

    申请日：2012-05-07

    申请人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida ,  Tetsuya Asayama

    发明人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida ,  Tetsuya Asayama

    IPC分类号： G11C11/00 ,  H01L43/08 ,  G11C11/16

    CPC分类号： H01L43/10 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  Y10S977/933 ,  Y10S977/935

    摘要： A memory element including a memory layer to hold the information by the magnetization state of a magnetic substance, a magnetization pinned layer having magnetization serving as a reference of the information stored in the memory layer, an intermediate layer formed from a nonmagnetic substance disposed between the memory layer and the magnetization pinned layer, a magnetic coupling layer disposed adjoining the magnetization pinned layer and opposing to the intermediate layer, and a high coercive force layer disposed adjoining the magnetic coupling layer, wherein the information is stored by reversing magnetization of the memory layer, making use of spin torque magnetization reversal generated along with a current passing in the lamination direction of the layered structure including the memory layer, the intermediate layer, and the magnetization pinned layer, and the magnetic coupling layer has a two-layer laminate structure.

    摘要翻译： 一种存储元件，包括通过磁性物质的磁化状态保持信息的存储层，具有作为存储在存储层中的信息的参考的磁化的磁化固定层，由设置在存储层中的非磁性物质形成的中间层 存储层和磁化固定层，邻近所述磁化被钉扎层并与所述中间层相对设置的磁耦合层和邻近所述磁耦合层设置的高矫顽力层，其中所述信息通过反转存储层的磁化而被存储 利用随着在包括存储层，中间层和磁化被钉扎层的层叠方向的层叠方向上流过的电流产生的自旋转矩磁化反转，并且磁耦合层具有两层层叠结构。

    Memory element and memory device
    6.
    发明授权
    Memory element and memory device 有权
    存储器元件和存储器件

    公开(公告)号：US08829631B2

    公开(公告)日：2014-09-09

    申请号：US13215405

    申请日：2011-08-23

    申请人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

    发明人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

    IPC分类号： H01L29/82 ,  G11C11/16

    CPC分类号： H01L43/10 ,  G11C11/16 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08

    摘要： There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face and becomes a reference for the information stored in the memory layer; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer and is formed of a non-magnetic layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure having the memory layer, the insulating layer, and the magnetization-fixed layer, and thereby the magnetization direction varies and a recording of information is performed with respect to the memory layer, and a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer.

    摘要翻译： 公开了一种存储元件，其包括具有垂直于膜面的磁化和其磁化方向根据信息而变化的存储层; 磁化固定层，其具有垂直于膜面的磁化，并成为存储在存储层中的信息的参考; 以及绝缘层，其设置在所述存储层和所述磁化固定层之间并且由非磁性层形成，其中在具有所述存储层的层状结构的层叠方向上注入自旋极化的电子， 绝缘层和磁化固定层，从而磁化方向变化，并且相对于存储层执行信息记录，存储层接收的有效抗磁场的大小小于饱和磁化强度 内存层的数量。

    Storage element and storage device
    7.
    发明授权
    Storage element and storage device 有权
    存储元件和存储设备

    公开(公告)号：US08625342B2

    公开(公告)日：2014-01-07

    申请号：US13461437

    申请日：2012-05-01

    申请人： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

    发明人： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC分类号： G11C11/14

    CPC分类号： H01L27/228 ,  G11C11/161 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08

    摘要： A storage element includes: a storage layer which retains information by a magnetization state of a magnetic substance; a magnetization pinned layer having magnetization which is used as the basis of the information stored in the storage layer; and an interlayer of a non-magnetic substance provided between the storage layer and the magnetization pinned layer. The storage element is configured to store information by reversing magnetization of the storage layer using spin torque magnetization reversal generated by a current passing in a laminate direction of a layer structure including the storage layer, the interlayer, and the magnetization pinned layer, and when the saturation magnetization of the storage layer and the thickness thereof are represented by Ms (emu/cc) and t (nm), respectively, (1489/Ms)−0.593

    摘要翻译： 存储元件包括：存储层，其通过磁性物质的磁化状态保持信息; 具有磁化的磁化固定层，其被用作存储在存储层中的信息的基础; 以及设置在存储层和磁化固定层之间的非磁性物质的中间层。 存储元件被配置为通过使用由包括存储层，中间层和磁化固定层的层结构的层叠方向通过的电流产生的自旋扭矩磁化反转来反转存储层的磁化来存储信息，并且当 存储层的饱和磁化强度和其厚度分别由Ms（emu / cc）和t（nm）表示，（1489 / Ms）-0.593

    Storage element and memory device
    8.
    发明授权
    Storage element and memory device 有权
    存储元件和存储器件

    公开(公告)号：US08559219B2

    公开(公告)日：2013-10-15

    申请号：US13344024

    申请日：2012-01-05

    申请人： Hiroyuki Uchida ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Hiroyuki Ohmori ,  Yutaka Higo ,  Tetsuya Asayama ,  Kazutaka Yamane

    发明人： Hiroyuki Uchida ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Hiroyuki Ohmori ,  Yutaka Higo ,  Tetsuya Asayama ,  Kazutaka Yamane

    IPC分类号： G11C11/14

    CPC分类号： G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    摘要： A storage element includes a storage layer which has magnetization vertical to the film surface and of which the direction of magnetization changes, a magnetization fixed layer which has magnetization vertical to the film surface serving as a reference of information, and an insulating layer, and the direction of magnetization of the storage layer changes by injecting spin-polarized electrons in the laminated direction of the layer structure so as to perform information recording, the size of an effective demagnetizing field that the storage layer receives is configured to be smaller than a saturated magnetization amount of the storage layer, and a ferromagnetic layer material constituting the storage layer has CoFeB as the base material and an anti-corrosive element is added to the base material.

    摘要翻译： 存储元件包括具有垂直于膜表面的磁化强度并且其磁化方向变化的磁化固定层，具有垂直于膜表面的磁化作为信息参考的磁化固定层的绝缘层和绝缘层， 存储层的磁化方向通过在层结构的层叠方向注入自旋极化电子来进行信息记录而改变，存储层接收的有效去磁场的尺寸被配置为小于饱和磁化强度 存储层的量和构成保存层的铁磁层材料具有CoFeB作为基材，并且在基材中添加防腐蚀元素。

    STORAGE ELEMENT AND STORAGE DEVICE
    9.
    发明申请
    STORAGE ELEMENT AND STORAGE DEVICE 有权
    存储元件和存储设备

    公开(公告)号：US20130033931A1

    公开(公告)日：2013-02-07

    申请号：US13560708

    申请日：2012-07-27

    申请人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

    发明人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

    IPC分类号： G11C11/16

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10

    摘要： Provided is a storage element including a storage layer that holds information according to a magnetization state of a magnetic body, a magnetization fixing layer that has magnetization serving as a reference of the information stored in the storage layer, and an insulation layer that is formed of a non-magnetic body disposed between the storage layer and the magnetization fixing layer. The information is stored by reversing the magnetization of the storage layer using spin torque magnetization reversal occurring with a current flowing in a lamination direction of a layer configuration of the storage layer, the insulation layer, and the magnetization fixing layer, and a size of the storage layer is less than a size in which a direction of the magnetization is simultaneously changed.

    摘要翻译： 提供一种存储元件，其包括存储层，其根据磁体的磁化状态保存信息;磁化固定层，其具有作为存储在存储层中的信息的参考的磁化;以及绝缘层，其由 设置在所述存储层和所述磁化固定层之间的非磁性体。 通过使用在存储层，绝缘层和磁化固定层的层构造的层叠方向上流动的电流发生的自旋转矩磁化反转来反转存储层的磁化来存储信息，以及 存储层小于磁化方向同时变化的尺寸。

    STORAGE ELEMENT AND STORAGE DEVICE
    10.
    发明申请
    STORAGE ELEMENT AND STORAGE DEVICE 有权
    存储元件和存储设备

    公开(公告)号：US20120300541A1

    公开(公告)日：2012-11-29

    申请号：US13461437

    申请日：2012-05-01

    申请人： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

    发明人： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC分类号： G11C11/14

    CPC分类号： H01L27/228 ,  G11C11/161 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08

    摘要： A storage element includes: a storage layer which retains information by a magnetization state of a magnetic substance; a magnetization pinned layer having magnetization which is used as the basis of the information stored in the storage layer; and an interlayer of a non-magnetic substance provided between the storage layer and the magnetization pinned layer. The storage element is configured to store information by reversing magnetization of the storage layer using spin torque magnetization reversal generated by a current passing in a laminate direction of a layer structure including the storage layer, the interlayer, and the magnetization pinned layer, and when the saturation magnetization of the storage layer and the thickness thereof are represented by Ms (emu/cc) and t (nm), respectively, (1489/Ms)−0.593

    摘要翻译： 存储元件包括：存储层，其通过磁性物质的磁化状态保持信息; 具有磁化的磁化固定层，其被用作存储在存储层中的信息的基础; 以及设置在存储层和磁化固定层之间的非磁性物质的中间层。 存储元件被配置为通过使用由包括存储层，中间层和磁化固定层的层结构的层叠方向通过的电流产生的自旋扭矩磁化反转来反转存储层的磁化来存储信息，并且当 存储层的饱和磁化强度和其厚度分别由Ms（emu / cc）和t（nm）表示，（1489 / Ms）-0.593