公开(公告)号：US4492879A

公开(公告)日：1985-01-08

申请号：US312126

申请日：1981-10-16

申请人： Yutaka Tsuchiya ,  Eiji Inuzuka ,  Yuji Shinoda

发明人： Yutaka Tsuchiya ,  Eiji Inuzuka ,  Yuji Shinoda

IPC分类号： H03K3/335 ,  H03K5/04 ,  H03K5/02 ,  H03K17/60

CPC分类号： H03K3/335

摘要： A trigger circuit comprises a shaping circuit connected between an input terminal receiving a trigger signal and an avalanche transistor. The shaping circuit has a pass band whose upper limit frequency is much lower than the frequency component of the leading edge of the input trigger signal, and it has a saturation characteristic to provide a pulse whose time width is sufficient to start the avalanche transistor.

摘要翻译： 触发电路包括连接在接收触发信号的输入端和雪崩晶体管之间的整形电路。 整形电路具有通带，其上限频率远低于输入触发信号的前沿的频率分量，并且具有饱和特性，以提供其时间宽度足以启动雪崩晶体管的脉冲。

公开(公告)号：US4602282A

公开(公告)日：1986-07-22

申请号：US506401

申请日：1983-06-21

申请人： Takehiro Kurono ,  Yutaka Tsuchiya ,  Eiji Inuzuka ,  Teruo Hiruma

发明人： Takehiro Kurono ,  Yutaka Tsuchiya ,  Eiji Inuzuka ,  Teruo Hiruma

IPC分类号： G01T1/164 ,  H01J37/22 ,  H04N7/18

CPC分类号： H01J37/224 ,  G01T1/1645

摘要： New types of devices for measuring two-dimensional photon-caused or corpuscular-ray-caused image signals by means of a special television imaging technology suitable for an extremely low level of incident visible light, infra-red, ultra-violet, X-rays, .gamma.-rays, protons or neutrons are disclosed. These image signals are sensed by an electron emitting layer, i.e., a photoelectric emitter or a secondary electron emitter, which can respond to photons or corpuscular rays, and then amplified by a micro-channel-plate which can multiply the emitted electrons to a finite number with their positional relationships remaining in the two-dimensional area. The amplified signals are digitally processed to be displayed on a television picture monitor. The image signals on the television picture monitor can be printed out or saved in magnetic media.

摘要翻译： 用于通过适用于极低水平的入射可见光，红外线，紫外线，X射线的特殊电视成像技术来测量二维光子引起的或红细胞的射线引起的图像信号的新型装置 公开了γ射线，质子或中子。 这些图像信号由电子发射层（即，光电发射器或二次电子发射器）感测，其可以响应于光子或红外线，然后由微通道板放大，微通道板可将发射的电子乘以有限 其位置关系保留在二维区域中。 放大的信号被数字处理以显示在电视图像监视器上。 电视图像监视器上的图像信号可以打印出来或保存在磁性介质中。

公开(公告)号：US5532607A

公开(公告)日：1996-07-02

申请号：US274716

申请日：1994-07-18

申请人： Eiji Inuzuka ,  Shigehisa Oguri ,  Kouji Suzuki ,  Wataru Nagata ,  Yasushi Hiruma

发明人： Eiji Inuzuka ,  Shigehisa Oguri ,  Kouji Suzuki ,  Wataru Nagata ,  Yasushi Hiruma

IPC分类号： G01N21/63 ,  G01N21/88 ,  G01N21/956 ,  H01L21/66 ,  G01R31/26

CPC分类号： H01L22/12

摘要： A semiconductor device inspection system having an improved measurement accuracy and in operability. A semiconductor device is observed from the bottom surface side. First, image data obtained upon image pickup under infrared illumination is converted into first left-to-right-reversed image data corresponding to a left-to-right-reversed image and the first reversed image data is stored. Then an image is obtained under no illumination from very weak light emitted from an abnormal portion when a bias is applied to the semiconductor device. Image data of the very weak light image is then converted into second left-to-right-reversed image data corresponding to a left-to-right-reversed image. The first and second left-to-right-reversed image data are superimposedly added to each other and a superimposed image is displayed with the abnormal portion being superimposed on a chip pattern as seen from the top surface of the semiconductor device.

摘要翻译： 一种具有改进的测量精度和可操作性的半导体器件检查系统。 从底面观察半导体器件。 首先，在红外照明下拍摄的图像数据被转换成与从左到右反转的图像对应的第一左右颠倒图像数据，并存储第一反转图像数据。 然后，当向半导体器件施加偏压时，从异常部分发出的非常弱的光线在无照明条件下获得图像。 然后，非常弱的光图像的图像数据被转换成对应于从左到右的反转图像的第二左至右反转的图像数据。 第一和第二左至右反转的图像数据彼此叠加，并且从半导体器件的顶表面看，叠加的图像被显示，异常部分叠加在芯片图案上。

公开(公告)号：US5136373A

公开(公告)日：1992-08-04

申请号：US638027

申请日：1991-01-07

申请人： Kiyoshi Kamiya ,  Eiji Inuzuka ,  Masahumi Oshiro ,  Shigeru Uchiyama ,  Koji Suzuki

发明人： Kiyoshi Kamiya ,  Eiji Inuzuka ,  Masahumi Oshiro ,  Shigeru Uchiyama ,  Koji Suzuki

IPC分类号： G01N21/66 ,  G01N21/84 ,  G02B21/00

CPC分类号： G02B21/0004 ,  G01N21/66 ,  G01N2021/1765 ,  G01N2021/8461

摘要： Configuration image data representing an external form of an object is stored in advance in a configuration image memory. A two-dimensional image of faint light emitted from the object is detected by a high-sensitivity image pickup means including a two-dimensional photon-counting tube. Faint light image data representing the detected faint light image is accumulated by an adder circuit, and stored in a faint light image memory. The stored faint light image data is superposed on the stored configuration data for each accumulating operation, and based on the superposed image data a superposed image is successivley displayed on a display device.

摘要翻译： 表示对象的外部形式的配置图像数据预先存储在配置图像存储器中。 通过包括二维光子计数管的高灵敏度图像拾取装置来检测从物体发出的微弱光的二维图像。 表示检测到的微弱光图像的微弱光图像数据由加法器电路累积，并存储在微弱的光图像存储器中。 存储的微弱光图像数据被叠加在用于每个累积操作的存储的配置数据上，并且基于叠加的图像数据，叠加的图像被成功地显示在显示装置上。

公开(公告)号：US6002792A

公开(公告)日：1999-12-14

申请号：US607873

申请日：1996-02-29

申请人： Shigehisa Oguri ,  Eiji Inuzuka ,  Kouji Suzuki ,  Wataru Nagata ,  Yasushi Hiruma

发明人： Shigehisa Oguri ,  Eiji Inuzuka ,  Kouji Suzuki ,  Wataru Nagata ,  Yasushi Hiruma

IPC分类号： G01N21/95 ,  G01R31/302 ,  G06K9/00

CPC分类号： G01N21/9501 ,  G01N21/956

摘要： The present invention relates to an inspection system for transparently taking an image of inside of a semiconductor device to analyze anomalous occurrence. First, image data obtained under infrared ray illumination are converted into a first left-to-right reversed image data in which the obtained image data are reversed left to right and the first left-to-right reversed image data are stored. Next, very weak light emitted from an anomalous portion when the semiconductor device is biased is picked up under no illumination. Then, image data of very weak light is converted into a second left-to-right reversed image data in which the image data of weak light are reversed left to right. The first and second left-to-right image data are superimposed to superimpose the image specifying the anomalous location on an image of chip patterns in the semiconductor device and the superimposed image is displayed. Further, in the infrared-ray epi-irradiation means, an optical filter made of the same material as that of the semiconductor device to be measured is used to form infrared rays for illumination, so that when the back surface of the semiconductor device is irradiated with infrared rays produced by the optical filter, light having a short wavelength which is easily reflected on the surface of the semiconductor device is interrupted and infrared rays having high transmittance against the semiconductor device can be obtined.

摘要翻译： 本发明涉及一种用于透明地拍摄半导体器件内部的图像以分析异常发生的检查系统。 首先，在红外线照射下获得的图像数据被转换成从左到右反转所获得的图像数据并且存储第一左右颠倒图像数据的第一左右反转图像数据。 接下来，在半导体器件偏置时从异常部分发射的非常弱的光在无照明的情况下被拾取。 然后，非常弱的光的图像数据被转换成其中弱光的图像数据从左到右反转的第二个左至右反转图像数据。 第一和第二左右图像数据被叠加以将指定异常位置的图像叠加在半导体器件中的芯片图案的图像上，并且显示叠加的图像。 此外，在红外线照射装置中，使用与被测量的半导体装置相同的材料制成的滤光器，以形成用于照明的红外线，使得当半导体器件的背面被照射时 利用由滤光器产生的红外线，中断在半导体器件的表面上容易反射的短波长的光，可以获得对半导体器件具有高透射率的红外线。

公开(公告)号：US5227638A

公开(公告)日：1993-07-13

申请号：US737795

申请日：1991-07-24

申请人： Yoshihiko Mizushima ,  Takashi Iida ,  Eiji Inuzuka

发明人： Yoshihiko Mizushima ,  Takashi Iida ,  Eiji Inuzuka

IPC分类号： G01N21/64

CPC分类号： G01N21/66 ,  G01N21/6489

摘要： Photoluminescence or electroluminescence from a material substrate is measured in a photon-counting range. Luminous efficiency of the substrate in its normal operation range is evaluated on the basis of the measured data. The luminescence is measured in an excitation range of the material including a transition excitation level corresponding to a transition luminous level from a low luminous range to a regular, intense luminous range. Two-dimensional distribution of the luminous efficiencies can be obtained by measuring the luminescence from small divided areas of the substrate.

摘要翻译： 在光子计数范围内测量材料衬底的光致发光或电致发光。 基于测量数据评估基板在其正常工作范围内的发光效率。 在材料的激发范围内测量发光，其包括对应于从低发光范围到规则的强烈发光范围的过渡发光水平的跃迁激发水平。 可以通过从基板的小分割区域测量发光来获得发光效率的二维分布。