公开(公告)号：US4885260A

公开(公告)日：1989-12-05

申请号：US156525

申请日：1988-02-16

申请人： Yuzaburo Ban ,  Masaya Manno ,  Minoru Kubo ,  Mototsugu Morisaki ,  Mototsugu Ogura

发明人： Yuzaburo Ban ,  Masaya Manno ,  Minoru Kubo ,  Mototsugu Morisaki ,  Mototsugu Ogura

IPC分类号： H01L21/20 ,  H01L21/205

CPC分类号： H01L21/02395 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S117/904 ,  Y10S148/048 ,  Y10S148/065 ,  Y10S148/072 ,  Y10S148/094 ,  Y10S438/925 ,  Y10S438/936

摘要： Disclosed is a vapor phase growth method of compound semiconductor in which source gases are introduced into an epitaxial growth reactor at fixed feed rates, the substrate surface is irradiated with light, and the light irradiation is turned on and off, or the intensity of light irradiation is increased or decreased, so that an epitaxial layer structure changes in the composition, and the carrier concentration and conductivity type abruptly or continuously change in the growth film in the direction of the thickness.

摘要翻译： 公开了一种化合物半导体的气相生长方法，其中源气体以固定的进料速率被引入外延生长反应器中，基板表面被光照射，并且光照射被打开和关闭，或者光照射强度 增加或减少，使得外延层结构改变组成，并且载流子浓度和导电类型在生长膜中在厚度方向上突然或连续地变化。

公开(公告)号：US06822989B1

公开(公告)日：2004-11-23

申请号：US09515285

申请日：2000-02-29

申请人： Toshiya Fukuhisa ,  Masaya Manno ,  Akio Yoshikawa

发明人： Toshiya Fukuhisa ,  Masaya Manno ,  Akio Yoshikawa

IPC分类号： H01S500

CPC分类号： H01S5/2231 ,  H01S5/222 ,  H01S5/2226

摘要： A semiconductor laser, including: an n-type cladding layer that has n-type conductivity; an active layer formed on top of the n-type cladding layer; a p-type cladding base layer that is formed on top of the active layer and has p-type conductivity; a current-blocking layer that is formed on specified parts of an upper surface of the p-type cladding base layer and substantially has n-type conductivity; and a p-type buried cladding layer that has p-type conductivity and is formed so as to cover the current-blocking layer and contact remaining parts of the upper surface of the p-type cladding base layer. The current-blocking layer has at least two regions having different concentrations (hereafter “N1” and “N2” where N1

摘要翻译： 一种半导体激光器，包括：具有n型导电性的n型包层; 形成在n型包覆层顶部的有源层; p型覆层基层，形成在有源层的顶部并具有p型导电性; 形成在p型包覆基层的上表面的特定部分上并且基本上具有n型导电性的电流阻挡层; 以及具有p型导电性并形成为覆盖电流阻挡层并与p型包覆基底层的上表面的剩余部分接触的p型埋层包层。 电流阻挡层具有至少两个具有不同浓度的区域（以下称为“N1”和“N2”，其中N1