公开(公告)号：US20190207365A1

公开(公告)日：2019-07-04

申请号：US16296636

申请日：2019-03-08

申请人： Sony Corporation

发明人： Kota Tokuda ,  Takayuki Kawasumi

IPC分类号： H01S5/042 ,  H01S5/22 ,  H01S5/32 ,  H01S5/30

CPC分类号： H01S5/0425 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/2226 ,  H01S5/3054 ,  H01S5/3213 ,  H01S5/34333 ,  H01S2304/04

摘要： A semiconductor light-emitting element includes a laminated structure which has an active layer between a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, a first semiconductor layer which includes at least the first conductivity-type semiconductor layer of the laminated structure, an insulation film which is formed on the first semiconductor layer and has an opening, and a second semiconductor layer which is formed on the insulation film and includes at least the second conductivity-type semiconductor layer of the laminated structure. The second semiconductor layer includes a first region facing the opening of the insulation film and a second region not facing the opening, and the second region has a portion with a higher impurity concentration than the first region.

公开(公告)号：US09972973B2

公开(公告)日：2018-05-15

申请号：US15405998

申请日：2017-01-13

申请人： SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.

发明人： Takayuki Watanabe

IPC分类号： H01S5/00 ,  H01S5/227 ,  H01S5/30 ,  H01S5/343 ,  H01L21/02 ,  H01S5/32 ,  H01S5/042 ,  H01S5/22

CPC分类号： H01S5/2277 ,  H01L21/02543 ,  H01L21/0262 ,  H01L21/02636 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/2224 ,  H01S5/2226 ,  H01S5/2272 ,  H01S5/2275 ,  H01S5/3013 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/34306 ,  H01S5/3434 ,  H01S2301/176 ,  H01S2304/04

摘要： A semiconductor laser diode type of a buried-hetero structure (BH-LD) is disclosed. The LD provides a mesa, a first burying layer, and a second burying layer, where the burying layers are provided in respective sides of the mesa so as to expose a top of the mesa. The mesa includes a lower cladding layer, an active layer, and an upper cladding layer, where the cladding layers have conduction type opposite to each other and, combined with the burying layers, constitute a carrier confinement structure. The second burying layer has an even surface overlapping with an even surface of the first burying layer, and has a thickness in a portion of the even surface that is thinner than a thickness thereof in a portion except for the even surface.

公开(公告)号：US20180123320A1

公开(公告)日：2018-05-03

申请号：US15797707

申请日：2017-10-30

申请人： SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC

发明人： Naoki OGAWA

IPC分类号： H01S5/343 ,  H01S5/026 ,  H01S5/02

CPC分类号： H01S5/34313 ,  H01S5/0206 ,  H01S5/026 ,  H01S5/1231 ,  H01S5/2226 ,  H01S5/2275 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3406 ,  H01S5/3407 ,  H01S5/34306 ,  H01S5/34366

摘要： A semiconductor laser diode (LD) having an optical grating is disclosed. The LD includes a lower cladding layer that buries the optical grating, an active layer, and an upper cladding layer. The active layer has the multi-quantum well (MQW) structure of barrier layers and well layers alternately arranged to each other. The MQW structure further includes intermediate layers between the barrier layers and the well layers, and have lattice constant between that of the barrier layer and that of the well layer. The inter mediate layer has a thickness thinner than 1 nm.

公开(公告)号：US20150255950A1

公开(公告)日：2015-09-10

申请号：US14633363

申请日：2015-02-27

申请人： Sony Corporation

发明人： Kota Tokuda ,  Takayuki Kawasumi

IPC分类号： H01S5/042 ,  H01S5/22 ,  H01S5/343

CPC分类号： H01S5/0425 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/2226 ,  H01S5/3054 ,  H01S5/3213 ,  H01S5/34333 ,  H01S2304/04

摘要： A semiconductor light-emitting element includes a laminated structure which has an active layer between a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, a first semiconductor layer which includes at least the first conductivity-type semiconductor layer of the laminated structure, an insulation film which is formed on the first semiconductor layer and has an opening, and a second semiconductor layer which is formed on the insulation film and includes at least the second conductivity-type semiconductor layer of the laminated structure. The second semiconductor layer includes a first region facing the opening of the insulation film and a second region not facing the opening, and the second region has a portion with a higher impurity concentration than the first region.

摘要翻译： 半导体发光元件包括在第一导电型半导体层和第二导电型半导体层之间具有有源层的层压结构，至少包括层叠的第一导电型半导体层的第一半导体层 结构，形成在第一半导体层上并具有开口的绝缘膜，以及形成在绝缘膜上并且至少包括层叠结构的第二导电类型半导体层的第二半导体层。 第二半导体层包括面向绝缘膜的开口的第一区域和不面向开口的第二区域，并且第二区域具有比第一区域更高的杂质浓度的部分。

公开(公告)号：US08891570B2

公开(公告)日：2014-11-18

申请号：US13761755

申请日：2013-02-07

申请人： Oclaro Japan, Inc.

发明人： Kouji Nakahara ,  Yuki Wakayama ,  Takeshi Kitatani ,  Kazunori Shinoda

IPC分类号： H01S5/00 ,  H01S5/227 ,  H01S5/34 ,  H01S5/22 ,  H01S5/32 ,  H01S5/343 ,  H01S5/30 ,  H01S5/028 ,  H01S5/20 ,  H01S5/12

CPC分类号： H01S5/3403 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/0287 ,  H01S5/12 ,  H01S5/209 ,  H01S5/2201 ,  H01S5/2206 ,  H01S5/2213 ,  H01S5/2222 ,  H01S5/2224 ,  H01S5/2226 ,  H01S5/2275 ,  H01S5/3095 ,  H01S5/3201 ,  H01S5/3213 ,  H01S5/34306 ,  H01S2301/176

摘要： In a BH laser which uses InGaAlAs-MQW in an active layer, Al-based semiconductor multi-layer films including an InP buffer layer and an InGaAlAs-MQW layer, and an InGaAsP etching stop layer are formed in a mesa shape, and a p type InP burial layer is buried in side walls of the mesa shape. An air ridge mesa-stripe of a lateral center that is substantially the same as that of the mesa shape is formed on the mesa shape. According to the present structure, a leakage current can be considerably reduced, the light confinement coefficient can be made to be larger than in a BH laser in the related art, and thereby it is possible to implement a semiconductor laser with a low leakage current and a high relaxation oscillation frequency.

摘要翻译： 在有源层中使用InGaAlAs-MQW的BH激光器中，以台面形状形成包括InP缓冲层和InGaAlAs-MQW层的Al系半导体多层膜和InGaAsP蚀刻停止层，ap型 埋藏层埋在台面形状的侧壁上。 在台面形状上形成与台面形状基本相同的横向中心的气脊台面条纹。 根据本结构，相对于现有技术中的BH激光器，能够大幅度地减小泄漏电流，可以使光限制系数大于BH激光器，由此可以实现低泄漏电流的半导体激光器， 高弛豫振荡频率。

公开(公告)号：US08270446B2

公开(公告)日：2012-09-18

申请号：US12718009

申请日：2010-03-05

申请人： Takashi Shiota ,  Takeshi Kitatani

发明人： Takashi Shiota ,  Takeshi Kitatani

IPC分类号： H01S5/00

CPC分类号： H01S5/3434 ,  B82Y20/00 ,  H01S5/0265 ,  H01S5/12 ,  H01S5/187 ,  H01S5/2209 ,  H01S5/2226 ,  H01S5/2227 ,  H01S5/2275

摘要： High performance and high reliability of a semiconductor laser device having a buried-hetero structure are achieved. The semiconductor laser device having a buried-hetero structure is manufactured by burying both sides of a mesa structure by a Ru-doped InGaP wide-gap layer and subsequently by a Ru-doped InGaP graded layer whose composition is graded from InGaP to InP, and then, by a Ru-doped InP layer. By providing the Ru-doped InGaP graded layer between the Ru-doped InGaP wide-gap layer and the Ru-doped InP layer, the Ru-doped InGaP wide-gap layer and the Ru-doped InP layer not lattice-matching with each other can be formed as a buried layer with excellent crystallinity.

摘要翻译： 实现了具有掩埋异质结构的半导体激光器件的高性能和高可靠性。 具有掩埋异质结构的半导体激光器件通过用Ru掺杂的InGaP宽间隙层掩埋台面结构的两面并随后通过组成从InGaP分级为InP的Ru掺杂的InGaP梯度层而制造，以及 然后，通过Ru掺杂的InP层。 通过在Ru掺杂的InGaP宽间隙层和Ru掺杂的InP层之间提供Ru掺杂的InGaP渐变层，Ru掺杂的InGaP宽间隙层和Ru掺杂的InP层彼此不格子匹配 可以形成具有优异结晶度的埋层。

公开(公告)号：US07920613B2

公开(公告)日：2011-04-05

申请号：US12245780

申请日：2008-10-06

申请人： Yasutaka Sakata

发明人： Yasutaka Sakata

IPC分类号： H01S5/00

CPC分类号： H01S5/3434 ,  B82Y20/00 ,  H01S5/2226 ,  H01S5/2275 ,  H01S5/3054 ,  H01S2304/00 ,  H01S2304/04

摘要： The reliability of a buried hetero-structure semiconductor laser is improved by preventing an increase in oscillation threshold current and a decrease in external differential quantum efficiency in cases where the semiconductor laser is energized continuously under conditions of high temperature and high optical output. An optical semiconductor laser has an optical waveguide structure comprising an n-type cladding layer, an active layer and p-type cladding layers, and a current narrowing/blocking structure comprising a p-type blocking layer and an n-type blocking layer, wherein concentration of hydrogen contained in the p-type cladding layers is higher than concentration of hydrogen contained in the p-type blocking layer.

摘要翻译： 在半导体激光器在高温和高光输出条件下连续通电的情况下，通过防止振荡阈值电流的增加和外部微分量子效率的降低，可以提高掩埋异质结构半导体激光器的可靠性。 光半导体激光器具有包括n型包覆层，有源层和p型覆层的光波导结构以及包括p型阻挡层和n型阻挡层的电流窄化/阻挡结构，其中 p型包覆层中所含的氢的浓度高于p型阻挡层中所含的氢浓度。

公开(公告)号：US07835413B2

公开(公告)日：2010-11-16

申请号：US12198152

申请日：2008-08-26

申请人： Tohru Takiguchi ,  Yuichiro Okunuki ,  Go Sakaino

发明人： Tohru Takiguchi ,  Yuichiro Okunuki ,  Go Sakaino

IPC分类号： H01S5/00

CPC分类号： H01S5/227 ,  H01S5/2222 ,  H01S5/2226 ,  H01S5/2275

摘要： A semiconductor laser comprises: a ridge structure including a p-type cladding layer, an active layer, and an n-type cladding layer stacked on one another; and a burying layer burying sides of the ridge structure. The burying layer includes a p-type semiconductor layer and an n-type semiconductor layer that form a pn junction; and one of the p-type semiconductor layer and the n-type semiconductor layer has a carrier concentration of 5×1017 cm−3 or less near the pn junction.

摘要翻译： 半导体激光器包括：包括彼此堆叠的p型覆层，有源层和n型覆层的脊结构; 以及埋藏在山脊结构侧面的埋藏层。 掩埋层包括形成pn结的p型半导体层和n型半导体层; p型半导体层和n型半导体层中的一个在pn结附近具有5×1017cm-3以下的载流子浓度。

公开(公告)号：US07807489B2

公开(公告)日：2010-10-05

申请号：US12213392

申请日：2008-06-18

申请人： Mitsuo Takahashi ,  Kenji Hiratsuka ,  Akiko Kumagai

发明人： Mitsuo Takahashi ,  Kenji Hiratsuka ,  Akiko Kumagai

IPC分类号： H01L21/00

CPC分类号： H01S5/227 ,  B82Y20/00 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/2226 ,  H01S5/2275 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3072 ,  H01S5/34306 ,  H01S5/34366 ,  Y10S438/924

摘要： A light-emitting device with a protection layer for Zn inter-diffusion and a process to form the device are described. The device of the invention provides an active layer containing aluminum (Al) as a group III element, typically AlGaInAs, and protection layers containing silicon (Si) to prevent the inter-diffusion of zing (Zn) atoms contained in p-type layers surrounding the active layer. One of protection layers is put between the active layer and the p-type cladding layer, while, the other of protection layers is disposed between the active layer and the p-type burying layer.

摘要翻译： 描述了具有用于Zn互扩散的保护层的发光器件和形成该器件的工艺。 本发明的器件提供了含有铝（Al）作为III族元素（通常为AlGaInAs）和包含硅（Si）的保护层的活性层，以防止包围在围绕p型层的p型层中的zing（Zn）原子的相互扩散 活动层。 在有源层和p型包覆层之间放置一层保护层，另一层保护层设置在有源层和p型埋层之间。

公开(公告)号：US20080283852A1

公开(公告)日：2008-11-20

申请号：US12153081

申请日：2008-05-13

申请人： Yukihiro TSUJI ,  Kenji Hiratsuka ,  Mitsuo Takahashi

发明人： Yukihiro TSUJI ,  Kenji Hiratsuka ,  Mitsuo Takahashi

IPC分类号： H01L33/00 ,  H01L21/02

CPC分类号： H01S5/227 ,  B82Y20/00 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/2226 ,  H01S5/2275 ,  H01S5/34306 ,  H01S5/34366 ,  H01S2304/04

摘要： A light-emitting device and a method to from the device are is described. The device described herein may realize the transversely single mode operation by the buried mesa configuration even when the active layer contains aluminum. The method provides a step to form the mesa on a semiconductor substrate with an average dislocation density of 500 to 5000 cm−2, a step to form a protection layer, which prevents the active layer from oxidizing, at least on a side of the active layer, and a step to from a blocking layer so as to cover the protection layer and to bury the mesa.

摘要翻译： 对发光装置及其装置的方法进行说明。 本文描述的装置即使当活性层含有铝时，也可以通过埋地台形结构实现横向单模操作。 该方法提供了在半导体衬底上形成平均位错密度为500至5000cm -2的步骤，形成防止活性层氧化的保护层的步骤 至少在活性层的一侧，以及从阻挡层到覆盖保护层并埋入台面的步骤。