公开(公告)号：US20240012977A1

公开(公告)日：2024-01-11

申请号：US18328800

申请日：2023-06-05

Applicant: ZHEJIANG LAB

Inventor： Shunbin LI ,  Weihao WANG ,  Ruyun ZHANG ,  Qinrang LIU ,  Zhiquan WAN ,  Jianliang SHEN

IPC: G06F30/396 ,  H01L27/02

CPC classification number: G06F30/396 ,  H01L27/0207 ,  G06F2119/22

Abstract: A routing structure and a method of a wafer substrate with standard integration zone for integration on-wafer, which comprises a core voltage network, an interconnection signal network, a clock signal network and a ground network, wherein the core voltage network and the interconnection signal network belong to a top metal layer, the clock signal network is located in a inner metal layer, and the ground network is located in a bottom metal layer. The pins provided on the standard zone include core voltage pins, interconnection signal pins, clock signal pins, ground pins, and complex function pins. The complex function pins are directly connected to the outside of the system by TSV at the bottom of the wafer, and the other pins are connected by their signal networks. The present disclosure solves the yield problem with few metal layers of the wafer substrate for SoW.

公开(公告)号：US20240006372A1

公开(公告)日：2024-01-04

申请号：US18328797

申请日：2023-06-05

Applicant: ZHEJIANG LAB

Inventor： Weihao WANG ,  Shunbin LI ,  Guandong LIU ,  Ruyun ZHANG ,  Qinrang LIU ,  Zhiquan WAN ,  Jianliang SHEN

IPC: H01L23/00

CPC classification number: H01L24/81 ,  H01L24/11 ,  H01L24/14 ,  H01L2224/1403 ,  H01L2224/145 ,  H01L2224/14131 ,  H01L2224/11462

Abstract: A system-on-wafer structure and a fabrication method. The structure includes a wafer substrate, an integrated chiplet, a system configuration board and a thermal module. The wafer substrate and the integrated chiplet are bonded through a wafer micro bump array and a chiplet micro bump array. The wafer substrate and the system configuration board are bonded through a copper pillar array on wafer substrate topside and a pad on system configuration board backside. A molding layer is provided between the wafer substrate and the system configuration board, and is configured to mold the wafer substrate, the integrated chiplet and the copper pillar array. Integrated chiplet are electrically connected to each other through a re-distributed layer in wafer substrate. The integrated chiplet is electrically connected to the system configuration board through the re-distributed layer and the copper pillar array. The thermal module is attached to the backside of the wafer substrate.

公开(公告)号：US20240021578A1

公开(公告)日：2024-01-18

申请号：US18298379

申请日：2023-04-11

Applicant: ZHEJIANG LAB

Inventor： Shunbin LI ,  Weihao WANG ,  Ruyun ZHANG ,  Qinrang LIU ,  Zhiquan WAN ,  Jianliang SHEN

IPC: H01L25/065 ,  H01L23/498 ,  H01L23/538 ,  H01L23/00 ,  H01L21/306 ,  H01L21/48 ,  H01L21/56

CPC classification number: H01L25/0655 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/5383 ,  H01L24/16 ,  H01L24/81 ,  H01L21/30625 ,  H01L21/486 ,  H01L21/565 ,  H01L2224/16235 ,  H01L2224/81192 ,  H01L2924/182

Abstract: A wafer-level heterogeneous dies integration structure and method are provided. The integration structure includes a wafer substrate, a silicon interposer, heterogeneous dies, and a configuration substrate. A standard integration module is defined by the heterogeneous dies connected to the silicon interposer. The standard integration module is connected to an upper surface of the wafer substrate, and the configuration substrate is connected to a lower surface of the wafer substrate. The wafer substrate is connected to the configuration substrate via Through Silicon Vias on lower surface of the wafer substrate. And the upper surface of the wafer substrate is provided with Re-distributed Layers and a standardized micro bump array to form standard integration zone connected to the standard integration module.