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公开(公告)号：US12046283B2
公开(公告)日：2024-07-23
申请号：US17841689
申请日：2022-06-16
申请人： ZHEJIANG UNIVERSITY
发明人： Yi Zhao , Shifan Gao
CPC分类号： G11C13/0069 , G06N3/063 , G11C13/003 , G11C11/1675 , G11C11/2275 , G11C13/0004 , G11C2213/79
摘要： Disclosed are a compute-in-memory array and module, and a data computing method; a storage cell is configured to form an array used for computation; the storage cell consists of bitcells serially connected in sequence; a bitcell comprises a switching device and a resistive memory; the switching device is connected in series or in parallel with the resistive memory; the write resistance value of the storage cell is determined by means of controlling the switching state of the switching device so as to change the resistance state of the resistive memory. Since resistive memories have different resistance states, a resistive memory can be set in different resistance states by means of the switching state of the switching device, such that the storage cell is at a required write resistance value, thereby enabling the quick implementation of a write operation of the bitcell.
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公开(公告)号：US11848052B2
公开(公告)日：2023-12-19
申请号：US17704041
申请日：2022-03-25
申请人： ZHEJIANG UNIVERSITY
CPC分类号： G11C15/046 , H10N70/20
摘要： The present disclosure discloses a ternary content addressable memory based on a memory diode, which includes a plurality of kernel units having functions of storing data, erasing/writing data, and comparing data; the kernel units are arranged in an array, all kernel units in a unit of row are connected to a same matching line, and all kernel units in a unit of column are connected to a same pair of complementary search signal lines; the kernel unit includes two memory diodes; top electrodes of a first memory diode and a second memory diode are respectively connected to a pair of complementary search signal lines, and bottom electrodes of the first memory diode and the second memory diode are connected to a same matching line. The present disclosure can greatly reduce a chip dimension of the ternary content addressable memory and reduce power consumption; the ternary content addressable memory of the present disclosure has a simple structure, which effectively simplifies a manufacturing process and reduces a manufacturing cost; the present disclosure provides and achieves a memory diode that is compatible with a standard CMOS process, which is suitable for currently rapidly developing semiconductor integrated circuits.
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公开(公告)号：US11328774B2
公开(公告)日：2022-05-10
申请号：US17049585
申请日：2018-07-16
申请人： ZHEJIANG UNIVERSITY
摘要： The present disclosure discloses a ternary content addressable memory based on a memory diode, which includes a plurality of kernel units having functions of storing data, erasing/writing data, and comparing data; the kernel units are arranged in an array, all kernel units in a unit of row are connected to a same matching line, and all kernel units in a unit of column are connected to a same pair of complementary search signal lines; the kernel unit includes two memory diodes; top electrodes of a first memory diode and a second memory diode are respectively connected to a pair of complementary search signal lines, and bottom electrodes of the first memory diode and the second memory diode are connected to a same matching line. The present disclosure can greatly reduce a chip dimension of the ternary content addressable memory and reduce power consumption; the ternary content addressable memory of the present disclosure has a simple structure, which effectively simplifies a manufacturing process and reduces a manufacturing cost; the present disclosure provides and achieves a memory diode that is compatible with a standard CMOS process, which is suitable for currently rapidly developing semiconductor integrated circuits.
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