利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

78 条记录 (耗时 0.057 秒)

    Methods of making implanted structures
    1.
    发明授权
    Methods of making implanted structures 失效
    植入结构的方法

    公开(公告)号：US06309975B1

    公开(公告)日：2001-10-30

    申请号：US08818660

    申请日：1997-03-14

    申请人： Zhiqiang Wu ,  Li Li ,  Thomas A. Figura ,  Kunal R. Parekh ,  Pai-Hung Pan ,  Alan R. Reinberg ,  Kin F. Ma

    发明人： Zhiqiang Wu ,  Li Li ,  Thomas A. Figura ,  Kunal R. Parekh ,  Pai-Hung Pan ,  Alan R. Reinberg ,  Kin F. Ma

    IPC分类号： H01L2100

    CPC分类号： H01L27/10852 ,  H01L21/2815 ,  H01L21/28525 ,  H01L21/30608 ,  H01L21/32134 ,  H01L21/76232 ,  H01L21/76237 ,  H01L21/7624 ,  H01L21/76838 ,  H01L21/76897 ,  H01L27/10817 ,  H01L28/60 ,  H01L29/66492 ,  H01L29/66575

    摘要： Methods are disclosed for forming shaped structures of silicon-containing material with ion implantation and an etching process which is selective to silicon-containing material implanted to a certain concentration of ions or with an etching process which is selective to relatively unimplanted silicon-containing material. In general, the methods initially involve providing a layer of silicon-containing material such as polysilicon or epitaxial silicon on a semiconductor substrate. The layer of silicon-containing material is then masked, and ions are implanted into exposed portions of the layer of silicon-containing material. The mask is removed, and the aforementioned selective etching process is conducted to result in one of an implanted and a relatively unimplanted portion of the layer of silicon-containing material being etched away and the other left standing to form a shaped structure of silicon-containing material. One preferred selective etching process uses an etchant solution comprising a selected weight percentage of tetramethyl ammonium hydroxide in deionized water. The etchant solution etches relatively unimplanted silicon-containing material implanted up to 60 times faster than it etches silicon-containing material implanted to beyond a threshold concentration of ions. The various methods are used to form raised shaped structures, shaped openings, polysilicon plugs, capacitor storage nodes, surround-gate transistors, free-standing walls, interconnect lines, trench capacitors, and trench isolation regions.

    摘要翻译： 公开了用于通过离子注入形成含硅材料的成形结构的方法，以及对注入一定浓度的离子的含硅材料或对相对未被植入的含硅材料选择性的蚀刻工艺是选择性的蚀刻工艺。 通常，该方法最初涉及在半导体衬底上提供诸如多晶硅或外延硅的含硅材料层。 然后掩蔽含硅材料层，并将离子注入含硅材料层的暴露部分。 去除掩模，并且进行上述选择性蚀刻工艺以导致被蚀刻掉的含硅材料层的注入和相对未被注入的部分中的一个，而另一个放置形成含硅的成形结构 材料。 一种优选的选择性蚀刻方法使用包含选定重量百分比的四甲基氢氧化铵在去离子水中的蚀刻剂溶液。 蚀刻剂溶液蚀刻相对未被植入的含硅材料，其比注入超过阈值浓度离子的含硅材料蚀刻高达60倍。 各种方法用于形成凸起形状的结构，成形开口，多晶硅插塞，电容器存储节点，环绕栅极晶体管，独立壁，互连线，沟槽电容器和沟槽隔离区域。

    Material removal method for forming a structure
    4.
    发明授权
    Material removal method for forming a structure 有权
    用于形成结构的材料去除方法

    公开(公告)号：US06461967B2

    公开(公告)日：2002-10-08

    申请号：US09907296

    申请日：2001-07-16

    申请人： Zhiqiang Wu ,  Li Li ,  Thomas A. Figura ,  Kunal R. Parekh ,  Pai-Hung Pan ,  Alan R. Reinberg ,  Kin F. Ma

    发明人： Zhiqiang Wu ,  Li Li ,  Thomas A. Figura ,  Kunal R. Parekh ,  Pai-Hung Pan ,  Alan R. Reinberg ,  Kin F. Ma

    IPC分类号： H01L2100

    CPC分类号： H01L27/10852 ,  H01L21/2815 ,  H01L21/28525 ,  H01L21/30608 ,  H01L21/32134 ,  H01L21/76232 ,  H01L21/76237 ,  H01L21/7624 ,  H01L21/76838 ,  H01L21/76897 ,  H01L27/10817 ,  H01L28/60 ,  H01L29/66492 ,  H01L29/66575

    摘要： Methods are disclosed for forming shaped structures from silicon and/or germanium containing material with a material removal process that is selective to low stress portions of the material. In general, the method initially provides a layer of the material on a semiconductor substrate. The material, which has uniform stress therein, is then masked, and the stress in a portion of the material is reduced, such as by implanting ions into an unmasked portion. The mask is removed, and the high stress masked portion of the material is selectively removed, preferably by an etching process. The low stress portion of the material remains and forms a shaped structure. One preferred selective etching process uses a basic etchant. The various methods are used to form raised shaped structures, shaped openings, polysilicon plugs, capacitor storage nodes, surround-gate transistors, free-standing walls, interconnect lines, trench capacitors, and trench isolation regions.

    摘要翻译： 公开了用于从具有对材料的低应力部分选择性的材料去除工艺从含硅和/或含锗材料形成成形结构的方法。 通常，该方法最初在半导体衬底上提供一层材料。 然后，其中具有均匀应力的材料被掩蔽，并且材料的一部分中的应力例如通过将离子注入未掩模部分中而减少。 去除掩模，并且优选通过蚀刻工艺选择性地去除材料的高应力掩蔽部分。 材料的低应力部分保留并形成成形结构。 一种优选的选择性蚀刻方法使用基本蚀刻剂。 各种方法用于形成凸起形状的结构，成形开口，多晶硅插塞，电容器存储节点，环绕栅极晶体管，独立壁，互连线，沟槽电容器和沟槽隔离区域。

    Material removal method for forming a structure
    5.
    发明授权
    Material removal method for forming a structure 有权
    用于形成结构的材料去除方法

    公开(公告)号：US06261964B1

    公开(公告)日：2001-07-17

    申请号：US09205989

    申请日：1998-12-04

    申请人： Zhiqiang Wu ,  Li Li ,  Thomas A. Figura ,  Kunal R. Parekh ,  Pai-Hung Pan ,  Alan R. Reinberg ,  Kin F. Ma

    发明人： Zhiqiang Wu ,  Li Li ,  Thomas A. Figura ,  Kunal R. Parekh ,  Pai-Hung Pan ,  Alan R. Reinberg ,  Kin F. Ma

    IPC分类号： H01L2100

    CPC分类号： H01L27/10852 ,  H01L21/2815 ,  H01L21/28525 ,  H01L21/30608 ,  H01L21/32134 ,  H01L21/76232 ,  H01L21/76237 ,  H01L21/7624 ,  H01L21/76838 ,  H01L21/76897 ,  H01L27/10817 ,  H01L28/60 ,  H01L29/66492 ,  H01L29/66575

    摘要： Methods are disclosed for forming shaped structures from silicon and/or germanium containing material with a material removal process that is selective to low stress portions of the material. In general, the method initially provides a layer of the material on a semiconductor substrate. The material, which has uniform stress therein, is then masked, and the stress in a portion of the material is reduced, such as by implanting ions into an unmasked portion. The mask is removed, and the high stress masked portion of the material is selectively removed, preferably by an etching process. The low stress portion of the material remains and forms a shaped structure. One preferred selective etching process uses a basic etchant. The various methods are used to form raised shaped structures, shaped openings, polysilicon plugs, capacitor storage nodes, surround-gate transistors, free-standing walls, interconnect lines, trench capacitors, and trench isolation regions.

    摘要翻译： 公开了用于从具有对材料的低应力部分选择性的材料去除工艺从含硅和/或含锗材料形成成形结构的方法。 通常，该方法最初在半导体衬底上提供一层材料。 然后，其中具有均匀应力的材料被掩蔽，并且材料的一部分中的应力例如通过将离子注入未掩模部分中而减少。 去除掩模，并且优选通过蚀刻工艺选择性地去除材料的高应力掩蔽部分。 材料的低应力部分保留并形成成形结构。 一种优选的选择性蚀刻方法使用基本蚀刻剂。 各种方法用于形成凸起形状的结构，成形开口，多晶硅插塞，电容器存储节点，环绕栅极晶体管，独立壁，互连线，沟槽电容器和沟槽隔离区域。

    Doped silicon structure with impression image on opposing roughened surfaces
    8.
    发明授权
    Doped silicon structure with impression image on opposing roughened surfaces 失效
    在相对的粗糙表面上具有印模图像的掺杂硅结构

    公开(公告)号：US06507065B2

    公开(公告)日：2003-01-14

    申请号：US09897258

    申请日：2001-07-02

    申请人： Thomas A. Figura ,  Zhiquiang Wu ,  Li Li

    发明人： Thomas A. Figura ,  Zhiquiang Wu ,  Li Li

    IPC分类号： H01L27108

    CPC分类号： H01L27/10852 ,  H01L27/10817 ,  H01L28/82 ,  H01L28/84 ,  H01L28/86 ,  H01L28/90 ,  Y10S438/964

    摘要： A silicon structure is formed that includes a free-standing wall having opposing roughen ed inner and outer surfaces using ion implantation and an unplanted silicon etching process which is selective to implanted silicon. In general, the method provides a recess in a layer of insulating material into which a polysilicon layer is formed. A layer of HSG or CSG polysilicon is subsequently formed on the polysilicon layer, after which ions are implanted into both the layer of HSG or CSG polysilicon and the underlying polysilicon layer. The aforementioned selective etching process is then conducted to result in a relatively unplanted portion being etched away and a highly implanted portion being left standing to form the free-standing wall. The free-standing wall has an inner surface that is roughen ed by the layer of HSG or CSG polysilicon. The free-standing wall also has a roughen ed outer surface to which has been transferred a near-impression image topography of the opposing inner surface.

    摘要翻译： 形成硅结构，其包括使用离子注入的具有相对粗糙的内表面和外表面的独立壁和对植入硅有选择性的未用硅蚀刻工艺。 通常，该方法在其中形成多晶硅层的绝缘材料层中提供凹部。 随后在多晶硅层上形成一层HSG或CSG多晶硅，然后将离子注入HSG或CSG多晶硅层以及下层多晶硅层。 然后进行上述选择性蚀刻工艺，导致相对未被注入的部分被蚀刻掉，并且高度注入的部分被静置以形成自立壁。 独立式墙体的内表面由HSG或CSG多晶硅层粗糙化。 独立的墙壁还具有粗糙的外表面，已经转移到相对的内表面的近印象图像形貌。

    Doped silicon structure with impression image on opposing roughened surfaces
    10.
    发明授权
    Doped silicon structure with impression image on opposing roughened surfaces 失效
    在相对的粗糙表面上具有印模图像的掺杂硅结构

    公开(公告)号：US06255687B1

    公开(公告)日：2001-07-03

    申请号：US09407335

    申请日：1999-09-29

    申请人： Thomas A. Figura ,  Zhiquiang Wu ,  Li Li

    发明人： Thomas A. Figura ,  Zhiquiang Wu ,  Li Li

    IPC分类号： H01L27108

    CPC分类号： H01L27/10852 ,  H01L27/10817 ,  H01L28/82 ,  H01L28/84 ,  H01L28/86 ,  H01L28/90 ,  Y10S438/964

    摘要： A silicon structure is formed that includes a free-standing wall having opposing roughened inner and outer surfaces using ion implantation and an unimplanted silicon etching process which is selective to implanted silicon. In general, the method provides a recess in a layer of insulating material into which a polysilicon layer is formed. A layer of HSG or CSG polysilicon is subsequently formed on the polysilicon layer, after which ions are implanted into both the layer of HSG or CSG polysilicon and the underlying polysilicon layer. The aforementioned selective etching process is then conducted to result in a relatively unimplanted portion being etched away and a highly implanted portion being left standing to form the free-standing wall. The free-standing wall has an inner surface that is roughened by the layer of HSG or CSG polysilicon. The free-standing wall also has a roughened outer surface to which has been transferred a near-impression image topography of the opposing inner surface. The near-impression image topography of the outer and inner surfaces are due to the grains of the layer of HSG or CSG polysilicon which, during ion implantation and selective etching, transfer the topography of the inner surface to the outer surface so as to also roughened the outer surface. One preferred etching process uses an etchant comprising a selected volume of tetramethyl ammonium hydroxide in solution, which etches unimplanted silicon up to 60 times faster than implanted silicon. A capacitor storage node formed with the method has an increased surface area electrically connected with an underlying silicon substrate.

    摘要翻译： 形成硅结构，其包括使用离子注入的具有相对粗糙的内表面和外表面的独立壁，以及对植入的硅有选择性的未被注入的硅蚀刻工艺。 通常，该方法在其中形成多晶硅层的绝缘材料层中提供凹部。 随后在多晶硅层上形成一层HSG或CSG多晶硅，然后将离子注入HSG或CSG多晶硅层以及下层多晶硅层。 然后进行上述选择性蚀刻工艺，导致相对未被注入的部分被蚀刻掉，并且高度注入的部分被静置以形成自立壁。 自立壁的内表面被HSG或CSG多晶硅层粗糙化。 独立的墙壁还具有粗糙的外表面，其已经转移到相对的内表面的近印象图像形貌。 外表面和内表面的近印象图像形貌是由于HSG或CSG多晶硅层的晶粒，其在离子注入和选择性蚀刻期间将内表面的形貌转移到外表面以便也被粗糙化 外表面。 一种优选的蚀刻方法使用包含选定体积的四甲基氢氧化铵在溶液中的蚀刻剂，其蚀刻非植入硅比注入的硅快60倍。 用该方法形成的电容器存储节点具有与下面的硅衬底电连接的增加的表面积。