公开(公告)号：US20130200494A1

公开(公告)日：2013-08-08

申请号：US13366340

申请日：2012-02-05

申请人： Zhiying CHEN ,  Jianping ZHAO ,  Lee CHEN ,  Merritt FUNK ,  Radha SUNDARARAJAN

发明人： Zhiying CHEN ,  Jianping ZHAO ,  Lee CHEN ,  Merritt FUNK ,  Radha SUNDARARAJAN

IPC分类号： H01L29/93 ,  H01L21/329

CPC分类号： H01J37/32807 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642

摘要： A replaceable chamber element for use in a plasma processing system, such as a plasma etching system, is described. The replaceable chamber element includes a chamber component configured to be exposed to plasma in a plasma processing system, wherein the chamber component is fabricated to include a semiconductor junction, and wherein a capacitance of the chamber component is varied when a voltage is applied across the semiconductor junction.

摘要翻译： 描述了用于诸如等离子体蚀刻系统的等离子体处理系统中的可替换室元件。 可更换腔室元件包括被配置为在等离子体处理系统中暴露于等离子体的室部件，其中腔室部件被制造为包括半导体结，并且其中当跨越半导体施加电压时腔室部件的电容变化 交界处

公开(公告)号：US20130203258A1

公开(公告)日：2013-08-08

申请号：US13366341

申请日：2012-02-05

申请人： Zhiying CHEN ,  Jianping ZHAO ,  Lee CHEN ,  Merritt FUNK ,  Radha SUNDARARAJAN

发明人： Zhiying CHEN ,  Jianping ZHAO ,  Lee CHEN ,  Merritt FUNK ,  Radha SUNDARARAJAN

IPC分类号： H01L21/3065 ,  B32B9/04 ,  B05D5/12 ,  H05H1/24

CPC分类号： H01J37/32495 ,  H01J37/32504

摘要： A replaceable chamber element for use in a plasma processing system, such as a plasma etching system, is described. The replaceable chamber element includes a chamber component configured to be exposed to plasma in a plasma processing system, wherein the chamber component is fabricated of a ferroelectric material.

摘要翻译： 描述了用于诸如等离子体蚀刻系统的等离子体处理系统中的可替换室元件。 可替换室元件包括腔室部件，其被构造成在等离子体处理系统中暴露于等离子体，其中室部件由铁电材料制成。

公开(公告)号：US20080137078A1

公开(公告)日：2008-06-12

申请号：US12021172

申请日：2008-01-28

申请人： Kevin LALLY ,  Merritt FUNK ,  Radha SUNDARARAJAN

发明人： Kevin LALLY ,  Merritt FUNK ,  Radha SUNDARARAJAN

IPC分类号： G06F15/18

CPC分类号： G01N21/95607 ,  G01N21/4788 ,  G01N21/9501 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of measuring a damaged structure formed on a semiconductor wafer using optical metrology, the method includes obtaining a measured diffraction signal from a damaged periodic structure. A hypothetical profile of the damaged periodic structure is defined. The hypothetical profile having an undamaged portion, which corresponds to an undamaged area of a first material in the damaged periodic structure, and a damaged portion, which corresponds to a damaged area of the first material in the damaged periodic structure. The undamaged portion and the damaged portion have different properties associated with them. A simulated diffraction signal is calculated for the hypothetical damaged periodic structure using the hypothetical profile. The measured diffraction signal is compared to the simulated diffraction signal. If the measured diffraction signal and the simulated diffraction signal match within a matching criterion, then a damage amount for the damaged periodic structure is established based on the damaged portion of the hypothetical profile used to calculate the simulated diffraction signal.

摘要翻译： 一种使用光学测量法测量在半导体晶片上形成的损坏结构的方法，该方法包括从损坏的周期性结构获得测量的衍射信号。 定义损坏的周期结构的假设剖面。 具有未损坏部分的假想轮廓，其对应于损坏的周期性结构中的第一材料的未损坏区域，以及损坏部分，其对应于损坏的周期性结构中的第一材料的损坏区域。 未损伤部分和损坏部分具有与它们相关联的不同性质。 使用假设曲线计算假设损坏的周期性结构的模拟衍射信号。 将测得的衍射信号与模拟衍射信号进行比较。 如果测量的衍射信号和模拟衍射信号在匹配标准内匹配，则基于用于计算模拟衍射信号的假想轮廓的损坏部分建立损坏的周期性结构的损伤量。