公开(公告)号：US06660642B2

公开(公告)日：2003-12-09

申请号：US09912623

申请日：2001-07-25

申请人： Zou Zheng ,  Zhou Mei Sheng ,  Yelehanka Ramachandramurthy Pradeep ,  Paul Proctor

发明人： Zou Zheng ,  Zhou Mei Sheng ,  Yelehanka Ramachandramurthy Pradeep ,  Paul Proctor

IPC分类号： H01L21302

CPC分类号： H01L21/3065

摘要： A novel method to remove residual toxic gases trapped by a polymerizing process by an inert ion sputter is described. A masking layer is formed overlying a semiconductor substrate. An opening is etched through the masking layer into the semiconductor substrate whereby a polymer forms on sidewalls of the opening and whereby residual toxic gas reactants from gases used in the etching step are adsorbed by the polymer. Thereafter, the polymer is sputtered with non-reactive ions whereby the residual toxic gas reactants are desorbed from the polymer to complete removal of residual toxic gas reactants in the fabrication of an integrated circuit device.

公开(公告)号：US6124927A

公开(公告)日：2000-09-26

申请号：US314589

申请日：1999-05-19

申请人： Qinghua Zhong ,  Zou Zheng ,  Yelehanka Ramachandra Murthy Pradeep ,  Zhou Mei Sheng

发明人： Qinghua Zhong ,  Zou Zheng ,  Yelehanka Ramachandra Murthy Pradeep ,  Zhou Mei Sheng

IPC分类号： G01J3/443 ,  H01J37/32 ,  G01J3/30 ,  C23C16/00

CPC分类号： H01J37/32862 ,  G01J3/443 ,  H01J37/32935 ,  H01J37/32963

摘要： A new method of controlling the level of cleaning of the etch chamber by measuring the light emission caused by particles within the plasma of the etch chamber. The etch chamber clean process is invoked as soon as the level of contaminants within the etch chamber is observed as being too high. This measuring of the contaminants within the etch chamber is performed by measuring the particle light emission. The etch chamber cleaning process is considered complete when the light intensity created by existing particles in the chamber drops by a certain percentage.

摘要翻译： 通过测量由蚀刻室的等离子体内的颗粒引起的光发射来控制蚀刻室的清洁水平的新方法。 一旦观察到蚀刻室内的污染物浓度太高，就会调用蚀刻室清洁过程。 通过测量颗粒光发射来测量蚀刻室内的污染物。 当室内现有颗粒产生的光强度下降一定百分比时，蚀刻室清洁过程被认为是完整的。