公开(公告)号：US5628564A

公开(公告)日：1997-05-13

申请号：US412278

申请日：1995-03-28

申请人： Zsolt Nenyei ,  Andreas Tillmann ,  Heinrich Walk

发明人： Zsolt Nenyei ,  Andreas Tillmann ,  Heinrich Walk

IPC分类号： G01J5/04 ,  G01J5/08

CPC分类号： G01J5/0003 ,  G01J5/0007 ,  G01J2005/0048

摘要： A method and apparatus for optical pyrometry in a Rapid Thermal Processing (RTP) System, whereby the radiation used to heat the object to be processed in the RTP system is in part specularly reflected from specularly reflecting surfaces and is incident on the object with a particular angular distribution, and the thermal radiation from the object is measured at an angles different from the angle where the incident radiation specularly reflected from the surface of the object is a maximum.

摘要翻译： 在快速热处理（RTP）系统中用于光学高温测量的方法和装置，其中用于加热RTP系统中待处理物体的辐射部分地从镜面反射表面反射并且以具体的方式入射到物体上 角度分布，并且来自物体的热辐射以与从物体表面镜面反射的入射辐射最大的角度不同的角度被测量。

公开(公告)号：US5580830A

公开(公告)日：1996-12-03

申请号：US387220

申请日：1995-02-13

申请人： Zsolt Nenyei ,  Helmut Merkle ,  Andreas Tillmann

发明人： Zsolt Nenyei ,  Helmut Merkle ,  Andreas Tillmann

IPC分类号： C23C16/44 ,  H01L71/324

CPC分类号： C23C16/4408 ,  C23C16/4401 ,  Y10S438/935

摘要： A reaction chamber for a Rapid Thermal Processing (RTP) system contains an aperture to allow introduction and removal of the object to be processed. The cross sectional area of the aperture is significantly less than the cross sectional area of the reaction chamber. A method of flushing the reaction chamber, using a short time laminar flow of the flush gas, is used in combination with the aperture to increase the throughput of the RTP system.

摘要翻译： 用于快速热处理（RTP）系统的反应室包含允许引入和去除被处理物体的孔。 孔的横截面积显着小于反应室的横截面面积。 使用冲洗气体的短时间层流冲洗反应室的方法与孔径结合使用以增加RTP系统的生产量。

公开(公告)号：US07037797B1

公开(公告)日：2006-05-02

申请号：US09527873

申请日：2000-03-17

申请人： Sohaila Shooshtarian ,  Narasimha Acharya ,  Mike Elbert ,  Andreas Tillmann ,  Dieter Zernickel

发明人： Sohaila Shooshtarian ,  Narasimha Acharya ,  Mike Elbert ,  Andreas Tillmann ,  Dieter Zernickel

IPC分类号： H01L21/336

CPC分类号： H01L21/67109

摘要： The present invention is directed to an apparatus and process for locally heating and/or cooling of semiconductor wafers in thermal processing chambers. In particular, the apparatus of the present invention includes a device for heating or cooling localized regions of a wafer to control the temperature of such regions during one or more stages of a heat cycle. In one embodiment, gas nozzles eject gas towards the bottom of the wafer to provide localized temperature control. In another embodiment, a transparent gas pipe containing a variety of gas outlets distributes gas onto the top surface of the wafer to provide localized temperature control.

摘要翻译： 本发明涉及用于在热处理室中局部加热和/或冷却半导体晶片的装置和方法。 特别地，本发明的装置包括用于加热或冷却晶片的局部区域以在热循环的一个或多个阶段期间控制这些区域的温度的装置。 在一个实施例中，气体喷嘴朝向晶片的底部喷射气体以提供局部温度控制。 在另一个实施例中，包含各种气体出口的透明气体管道将气体分配到晶片的顶表面上以提供局部温度控制。

公开(公告)号：US07041610B1

公开(公告)日：2006-05-09

申请号：US10111737

申请日：2000-10-19

申请人： Andreas Tillmann ,  Uwe Kreiser

发明人： Andreas Tillmann ,  Uwe Kreiser

IPC分类号： H01L21/26 ,  H01L21/324 ,  H01L21/42

CPC分类号： H01L21/67115

摘要： In order to achieve temperature distribution, in particular a homogeneous temperature distribution in, for example, a substrate during a thermal treatment process of said substrate, a method is disclosed for the thermal treatment of substrates, in particular semi-conductor wafers, in a process chamber comprising at least one temperature distribution influencing element located in the process chamber. During thermal treatment, the spatial arrangement of the element is altered relative to the substrate and/or to the process chamber. A device for the thermal treatment of substrates in a process chamber is also disclosed, comprising at least one temperature distribution influencing element located in a process chamber wherein a device is provided in order to alter the spatial arrangement of the element relative to the substrate and/or to the process chamber during the thermal treatment process.

摘要翻译： 为了在所述衬底的热处理过程期间实现温度分布，特别是在例如衬底中的均匀温度分布，公开了用于在工艺中热处理衬底，特别是半导体晶片的方法 室包括位于处理室中的至少一个温度分布影响元件。 在热处理期间，元件的空间布置相对于衬底和/或处理室改变。 还公开了一种用于处理室中的基板的热处理的装置，包括位于处理室中的至少一个温度分布影响元件，其中设置器件以改变元件相对于衬底的空间排列和/ 或在热处理过程中到处理室。