公开(公告)号：US11367672B2

公开(公告)日：2022-06-21

申请号：US17052452

申请日：2019-03-20

Applicant: ams AG

Inventor： Jochen Kraft ,  Georg Parteder ,  Anderson Pires Singulani ,  Raffaele Coppeta ,  Franz Schrank

IPC: H01L21/00 ,  H01L23/48 ,  H01L23/528 ,  H01L23/00 ,  H01L23/522 ,  H01L23/532

Abstract: A semiconductor device includes a semiconductor body, an electrically conductive via which extends through at least a part of the semiconductor body, and where the via has a top side and a bottom side that faces away from the top side, an electrically conductive etch-stop layer arranged at the bottom side of the via in a plane which is parallel to a lateral direction, where the lateral direction is perpendicular to a vertical direction given by the main axis of extension of the via, and at least one electrically conductive contact layer at the bottom side of the via in a plane which is parallel to the lateral direction. The etch-stop layer is arranged between the electrically conductive via and the contact layer in the vertical direction, the lateral extent in the lateral direction of the etch-stop layer amounts to at least 2.5 times the lateral extent of the via in the lateral direction, and the lateral extent of the contact layer is smaller than the lateral extent of the via or the lateral extent of the contact layer amounts to at least 2.5 times the lateral extent of the via.

公开(公告)号：US11355386B2

公开(公告)日：2022-06-07

申请号：US16647304

申请日：2018-08-23

Applicant: ams AG

Inventor： Georg Parteder ,  Jochen Kraft ,  Raffaele Coppeta

IPC: H01L21/768 ,  H01L23/48

Abstract: A method for manufacturing a semiconductor device is provided. The method comprises the steps of providing a semiconductor body, forming a trench in the semiconductor body in a vertical direction which is perpendicular to the main plane of extension of the semiconductor body, and coating inner walls of the trench with an isolation layer. The method further comprises the steps of coating the isolation layer at the inner walls with a metallization layer, coating a top side of the semiconductor body, at which the trench is formed, at least partially with an electrically conductive contact layer, where the contact layer is electrically connected with the metallization layer, coating the top side of the semiconductor body at least partially and the trench with a capping layer, and forming a contact pad at the top side of the semiconductor body by removing the contact layer and the capping layer at least partially. Furthermore, a semiconductor device is provided.

公开(公告)号：US11732705B2

公开(公告)日：2023-08-22

申请号：US16967828

申请日：2019-02-01

Applicant: ams AG

Inventor： Raffaele Coppeta ,  Jacopo Brivio ,  Anderson Pires Singulani ,  Verena Vescoli

IPC: F04B43/02 ,  F04B43/04

CPC classification number: F04B43/026 ,  F04B43/043 ,  F04B43/046

Abstract: A pumping structure comprises at least two membranes, at least two actuation chambers, one evaluation chamber comprising an opening to the outside of the pumping structure, and at least three electrodes. Each membrane is arranged between two electrodes in a vertical direction which is perpendicular to the main plane of extension of the pumping structure, each actuation chamber is arranged between one of the membranes and one of the electrodes in vertical direction, and each actuation chamber is connected to the evaluation chamber via a channel. Furthermore, a particle detector and a method for pumping are provided.

公开(公告)号：US20210366764A1

公开(公告)日：2021-11-25

申请号：US16647304

申请日：2018-08-23

Applicant: ams AG

Inventor： Georg Parteder ,  Jochen Kraft ,  Raffaele Coppeta

IPC: H01L21/768 ,  H01L23/48

Abstract: A method for manufacturing a semiconductor device is provided. The method comprises the steps of providing a semiconductor body, forming a trench in the semiconductor body in a vertical direction which is perpendicular to the main plane of extension of the semiconductor body, and coating inner walls of the trench with an isolation layer. The method further comprises the steps of coating the isolation layer at the inner walls with a metallization layer, coating a top side of the semiconductor body, at which the trench is formed, at least partially with an electrically conductive contact layer, where the contact layer is electrically connected with the metallization layer, coating the top side of the semiconductor body at least partially and the trench with a capping layer, and forming a contact pad at the top side of the semiconductor body by removing the contact layer and the capping layer at least partially. Furthermore, a semiconductor device is provided.

公开(公告)号：US11127656B2

公开(公告)日：2021-09-21

申请号：US16483884

申请日：2018-02-14

Applicant: ams AG

Inventor： Jochen Kraft ,  Georg Parteder ,  Anderson Singulani ,  Raffaele Coppeta ,  Franz Schrank

IPC: H01L23/48 ,  H01L23/52 ,  H01L23/528 ,  H01L23/00

Abstract: A semiconductor device comprises a semiconductor body and an electrically conductive via which extends through at least a part of the semiconductor body, where the via has a lateral size which is given in a first lateral direction that is perpendicular to a vertical direction given by the main axis of extension of the via and where the via has a top side and a bottom side that faces away from the top side. The semiconductor device further comprises an electrically conductive etch-stop layer arranged at the bottom side of the via in a plane which is parallel to the first lateral direction, and at least one electrically conductive contact layer at the bottom side of the via in a plane which is parallel to the first lateral direction. The lateral extent in the first lateral direction of the etch-stop layer is larger than the lateral size of the via and the lateral extent in the first lateral direction of the contact layer is smaller than the lateral size of the via. Furthermore, the etch-stop layer is arranged between the electrically conductive via and the contact layer in the vertical direction.

公开(公告)号：US20200020611A1

公开(公告)日：2020-01-16

申请号：US16483884

申请日：2018-02-14

Applicant: ams AG

Inventor： Jochen Kraft ,  Georg Parteder ,  Anderson Singulani ,  Raffaele Coppeta ,  FRANZ SCHRANK

IPC: H01L23/48 ,  H01L23/528 ,  H01L23/00

Abstract: A semiconductor device comprises a semiconductor body and an electrically conductive via which extends through at least a part of the semiconductor body, where the via has a lateral size which is given in a first lateral direction that is perpendicular to a vertical direction given by the main axis of extension of the via and where the via has a top side and a bottom side that faces away from the top side. The semiconductor device further comprises an electrically conductive etch-stop layer arranged at the bottom side of the via in a plane which is parallel to the first lateral direction, and at least one electrically conductive contact layer at the bottom side of the via in a plane which is parallel to the first lateral direction. The lateral extent in the first lateral direction of the etch-stop layer is larger than the lateral size of the via and the lateral extent in the first lateral direction of the contact layer is smaller than the lateral size of the via. Furthermore, the etch-stop layer is arranged between the electrically conductive via and the contact layer in the vertical direction.