公开(公告)号：US20230043101A1

公开(公告)日：2023-02-09

申请号：US17789166

申请日：2021-01-14

Applicant: Agency for Science, Technology and Research ,  ams AG

Inventor： Zhengtong Liu ,  Jinghua Teng ,  Hong Son Chu ,  Qian Wang ,  Jie Deng ,  Soo Seng Norman Ang ,  Xiao Song Eric Tang ,  Ching Eng Jason Png ,  Gernot Fasching ,  Lijian Mai ,  Anderson Singulani ,  Jozef Pulko

IPC: G02B27/09 ,  G03F7/00

Abstract: Various embodiments may relate to an optical system. The optical system may include a lens structure configured to generate an outgoing Gaussian beam based on an incoming Gaussian beam. The optical system may also include a light source configured to provide the incoming Gaussian beam to the lens structure. The lens structure may be a flat lens or a phase plate.

公开(公告)号：US20190161340A1

公开(公告)日：2019-05-30

申请号：US16098230

申请日：2017-05-05

Applicant: ams AG

Inventor： Harald Etschmaier ,  Anderson Singulani

IPC: B81B7/00 ,  B81B3/00

CPC classification number: B81B7/0048 ,  B81B3/0021 ,  B81B7/0058 ,  B81B2201/02 ,  B81B2201/0264 ,  B81B2201/0292 ,  B81B2203/0127 ,  B81B2203/051

Abstract: A sensor assembly for being mounted on a circuit board comprises an interposer with at least one opening extending between a first and a second main surface of the interposer. The interposer comprises at least two stress decoupling elements, each comprising a flexible structure formed by a respective portion of the interposer being partially enclosed by one of the at least one opening. A sensor die is connected to the flexible structures on the first main surface. At least two board connection elements are arranged on the first main surface and adapted for connecting the assembly to the circuit board.

公开(公告)号：US20220244168A1

公开(公告)日：2022-08-04

申请号：US17617750

申请日：2020-07-09

Applicant: ams AG

Inventor： Jochen Kraft ,  Rainer Minixhofer ,  Victor Sidorov ,  Anderson Singulani ,  Martin Sagmeister ,  Fernando Castano

IPC: G01N21/17 ,  G01N33/00

Abstract: An apparatus includes an integrated waveguide structure, and a first light source operable to produce a probe beam having a first wavelength, wherein the probe beam is coupled into a first end of the waveguide structure. A second light source is operable to produce an excitation beam with having a second wavelength to excite gas molecules in close proximity to a path of the probe beam. A light detector is coupled to a second end of the integrated waveguide structure and is operable to detect the probe beam after it passes through the waveguide structure. The apparatus is operable such that excitation of the gas molecules results in a temperature increase of the gas molecules that induces a change in the probe beam that is measurable by the light detector.

公开(公告)号：US11127656B2

公开(公告)日：2021-09-21

申请号：US16483884

申请日：2018-02-14

Applicant: ams AG

Inventor： Jochen Kraft ,  Georg Parteder ,  Anderson Singulani ,  Raffaele Coppeta ,  Franz Schrank

IPC: H01L23/48 ,  H01L23/52 ,  H01L23/528 ,  H01L23/00

Abstract: A semiconductor device comprises a semiconductor body and an electrically conductive via which extends through at least a part of the semiconductor body, where the via has a lateral size which is given in a first lateral direction that is perpendicular to a vertical direction given by the main axis of extension of the via and where the via has a top side and a bottom side that faces away from the top side. The semiconductor device further comprises an electrically conductive etch-stop layer arranged at the bottom side of the via in a plane which is parallel to the first lateral direction, and at least one electrically conductive contact layer at the bottom side of the via in a plane which is parallel to the first lateral direction. The lateral extent in the first lateral direction of the etch-stop layer is larger than the lateral size of the via and the lateral extent in the first lateral direction of the contact layer is smaller than the lateral size of the via. Furthermore, the etch-stop layer is arranged between the electrically conductive via and the contact layer in the vertical direction.

公开(公告)号：US20210172852A1

公开(公告)日：2021-06-10

申请号：US16771855

申请日：2018-12-13

Applicant: ams AG

Inventor： Anderson Singulani ,  Georg Roehrer

IPC: G01N15/06 ,  G01N1/22

Abstract: An apparatus for sensing particulate matter in a fluid includes a first substrate; and a sensing device electrically integrated with the first substrate, the sensing device having a receiving surface. The apparatus includes a second substrate separated from the first substrate by a gap. The apparatus includes a heating element disposed in the gap between the first substrate and the second substrate and connected to the second substrate by a post. The heating element is aligned with the receiving surface of the sensing device, and a microfluidic channel is defined between the first substrate and the heating element.

公开(公告)号：US20200020611A1

公开(公告)日：2020-01-16

申请号：US16483884

申请日：2018-02-14

Applicant: ams AG

Inventor： Jochen Kraft ,  Georg Parteder ,  Anderson Singulani ,  Raffaele Coppeta ,  FRANZ SCHRANK

IPC: H01L23/48 ,  H01L23/528 ,  H01L23/00

Abstract: A semiconductor device comprises a semiconductor body and an electrically conductive via which extends through at least a part of the semiconductor body, where the via has a lateral size which is given in a first lateral direction that is perpendicular to a vertical direction given by the main axis of extension of the via and where the via has a top side and a bottom side that faces away from the top side. The semiconductor device further comprises an electrically conductive etch-stop layer arranged at the bottom side of the via in a plane which is parallel to the first lateral direction, and at least one electrically conductive contact layer at the bottom side of the via in a plane which is parallel to the first lateral direction. The lateral extent in the first lateral direction of the etch-stop layer is larger than the lateral size of the via and the lateral extent in the first lateral direction of the contact layer is smaller than the lateral size of the via. Furthermore, the etch-stop layer is arranged between the electrically conductive via and the contact layer in the vertical direction.