公开(公告)号：US11008644B2

公开(公告)日：2021-05-18

申请号：US16141504

申请日：2018-09-25

Applicant: nLIGHT, Inc.

Inventor： Adam Dittli ,  Robert J. Martinsen

IPC: C22F1/14 ,  B82Y40/00

Abstract: A method of non-ablatively laser patterning a multi-layer structure, the multi-layer structure including a substrate, a first layer disposed on the substrate, a second layer disposed on the first layer, and a third layer disposed on the second layer, the method including generating at least one laser pulse having laser parameters selected for non-ablatively changing the conductivity a selected portion of the third layer such that the selected portion becomes non-conductive, and directing the pulse to the multi-layer structure, wherein the conductivity of the first layer is not substantially changed by the pulse.

公开(公告)号：US20170129054A1

公开(公告)日：2017-05-11

申请号：US15349174

申请日：2016-11-11

Applicant: nLIGHT, Inc.

Inventor： Adam Dittli

IPC: B23K26/352 ,  B23K26/00

CPC classification number: B23K26/352 ,  B23K26/0006 ,  B23K26/36 ,  B23K2103/05

Abstract: A method includes generating at least one laser passivation pulse with process parameters selected to passivate an area of a metal target, and directing the at least one laser passivation pulse to the area in order to produce a passivation layer. Another method further includes, prior to laser passivation, generating at least one laser ablation pulse with process parameters selected to ablate metal from the area of the target, and directing the at least one laser ablation pulse to the area so as to ablate the metal and to provide the area for laser passivation.

公开(公告)号：US20170189992A1

公开(公告)日：2017-07-06

申请号：US15396738

申请日：2017-01-02

Applicant: nLIGHT, Inc.

Inventor： Adam Dittli ,  Ken Gross

IPC: B23K26/0622 ,  B23K26/00 ,  B23K26/352 ,  B41M5/00 ,  H01S3/00 ,  H01S3/23 ,  H01S3/094 ,  B41M5/26 ,  B23K26/082 ,  H01S3/067

CPC classification number: B23K26/0624 ,  B23K26/0006 ,  B23K26/0648 ,  B23K26/082 ,  B23K26/083 ,  B23K26/352 ,  B23K26/359 ,  B23K2101/35 ,  B23K2103/10 ,  B23K2103/166 ,  B23K2103/172 ,  B41M5/0052 ,  B41M5/0058 ,  B41M5/262 ,  B41M2205/04 ,  H01S3/0071 ,  H01S3/067 ,  H01S3/06754 ,  H01S3/094076 ,  H01S3/0941 ,  H01S3/2308

Abstract: A method includes generating a plurality of pulse bursts with a predetermined quantity of intra-burst pulses in each pulse burst and a temporal spacing between the intra-burst pulses, and with a pulse burst frequency, and scanning the pulse bursts across an anodized target at a scan rate so that the pulse bursts overlap at the anodized target by an amount that is above an overlap damage threshold and the intra-burst pulses provide a peak power and peak fluence that are below an ablation threshold of the anodized target so as to produce a laser mark on the anodized target with an L value of less than or equal to 30 and without a damage to an anodized layer of the anodized target.