摘要:
A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus used therefore. Particularly, the step for forming the amorphous layer is a step for irradiating plasma to the surface of the semiconductor substrate, and the step for forming the shallow impurity-introducing layer is a step for introducing impurities into the surface which has been made amorphous.
摘要:
There is provided a method of processing data for generating an error correction product code block devised so as to maintain the current level of redundancy after the error correcting ability is modified as a result of advancement of simiconductor and data recording/transmission technologies. Unlike any known technique of configuring a Reed-Solomon error correcting product code block of (M+P0).times.(N+PI) bytes for an information data of (M.times.N) bytes, an error correcting product code block data structure is obtained by configuring a (K.times.(M+1).times.(N+P))-byte Reed-Solomon error correcting product code block for (K.times.M.times.N)-byte data, making K variable to consequently make the entire size of the Reed-Solomon error correcting product code block variable. At the same time, the error correcting ability varies in proportion to the value of K without increasing redundancy.
摘要:
A semiconductor device has a first nitride semiconductor layer, a second nitride semiconductor layer formed on the first nitride semiconductor layer and having such a composition as to generate a 2-dimensional electron gas layer in the upper portion of the first nitride semiconductor layer, and an electrode having an ohmic property and formed selectively on the second nitride semiconductor layer. The second nitride semiconductor layer includes a contact area having at least one inclined portion with a bottom or wall surface thereof being inclined toward the upper surface of the first nitride semiconductor layer and defining a depressed cross-sectional configuration. The electrode is formed on the contact area.
摘要:
A digital convergence correction device converts correction data into serial data by using a parallel/serial converter, and further converts the serial data into an analog correction signal by using a serial input type digital/analog converter, and outputs the analog correction signal in order to correct misconvergence.