TWO-TRANSISTOR DEVICES FOR PROTECTING CIRCUITS FROM SUSTAINED OVERCURRENT

    公开(公告)号:US20190267791A1

    公开(公告)日:2019-08-29

    申请号:US16226693

    申请日:2018-12-20

    发明人: Mark D. Creech

    IPC分类号: H02H3/093 H02H1/04 H02H3/087

    摘要: Two-transistor devices protect electrical circuits from sustained overcurrent conditions. Some cases provide normally-on depletion mode transistors biased into enhancement mode for lower impedance during normal current conditions, and then the transistors are biased into blocking depletion mode during sustained overcurrent conditions to block the current to the circuit. Optionally, the devices have only two terminals and require no auxiliary power to operate. Other cases provide protective circuitry for the transistors' gates, timing circuitry designed to ignore brief nuisance spikes, and/or timing circuitry to delay resetting the device until the current has returned to an acceptable level.

    Two-transistor devices for protecting circuits from sustained overcurrent

    公开(公告)号:US11031769B2

    公开(公告)日:2021-06-08

    申请号:US16226693

    申请日:2018-12-20

    发明人: Mark D. Creech

    IPC分类号: H02H3/093 H02H1/04 H02H3/087

    摘要: Two-transistor devices protect electrical circuits from sustained overcurrent conditions. Some cases provide normally-on depletion mode transistors biased into enhancement mode for lower impedance during normal current conditions, and then the transistors are biased into blocking depletion mode during sustained overcurrent conditions to block the current to the circuit. Optionally, the devices have only two terminals and require no auxiliary power to operate. Other cases provide protective circuitry for the transistors' gates, timing circuitry designed to ignore brief nuisance spikes, and/or timing circuitry to delay resetting the device until the current has returned to an acceptable level.

    Two-transistor devices for protecting circuits from sustained overcurrent

    公开(公告)号:US10205313B2

    公开(公告)日:2019-02-12

    申请号:US15216758

    申请日:2016-07-22

    发明人: Mark D. Creech

    IPC分类号: H02H3/087 H02H3/093 H02H1/04

    摘要: Two-transistor devices protect electrical circuits from sustained overcurrent conditions. Some cases provide normally-on depletion mode transistors biased into enhancement mode for lower impedance during normal current conditions, and then the transistors are biased into blocking depletion mode during sustained overcurrent conditions to block the current to the circuit. Optionally, the devices have only two terminals and require no auxiliary power to operate. Other cases provide protective circuitry for the transistors' gates, timing circuitry designed to ignore brief nuisance spikes, and/or timing circuitry to delay resetting the device until the current has returned to an acceptable level.

    One-Transistor Devices for Protecting Circuits and Autocatalytic Voltage Conversion Therefor

    公开(公告)号:US20180248353A1

    公开(公告)日:2018-08-30

    申请号:US15755744

    申请日:2016-09-21

    发明人: Mark D. Creech

    摘要: Devices having one primary transistor, or a plurality of primary transistors in parallel, protect electrical circuits from overcurrent conditions. Optionally, the devices have only two terminals and require no auxiliary power to operate. In those devices, the voltage drop across the device provides the electrical energy to power the device. A third or fourth terminal can appear in further devices, allowing additional overcurrent and overvoltage monitoring opportunities. Autocatalytic voltage conversion allows certain devices to rapidly limit or block nascent overcurrents.

    TWO-TRANSISTOR DEVICES FOR PROTECTING CIRCUITS FROM SUSTAINED OVERCURRENT
    10.
    发明申请
    TWO-TRANSISTOR DEVICES FOR PROTECTING CIRCUITS FROM SUSTAINED OVERCURRENT 审中-公开
    用于保护电流从保持过流的两个晶体管器件

    公开(公告)号:US20170025844A1

    公开(公告)日:2017-01-26

    申请号:US15216758

    申请日:2016-07-22

    发明人: Mark D. Creech

    IPC分类号: H02H3/093

    CPC分类号: H02H3/093 H02H1/04 H02H3/087

    摘要: Two-transistor devices protect electrical circuits from sustained overcurrent conditions. Some cases provide normally-on depletion mode transistors biased into enhancement mode for lower impedance during normal current conditions, and then the transistors are biased into blocking depletion mode during sustained overcurrent conditions to block the current to the circuit. Optionally, the devices have only two terminals and require no auxiliary power to operate. Other cases provide protective circuitry for the transistors' gates, timing circuitry designed to ignore brief nuisance spikes, and/or timing circuitry to delay resetting the device until the current has returned to an acceptable level.

    摘要翻译: 双晶体管器件保护电路不受持续的过流条件影响。 一些情况提供了在正常电流条件期间偏置到增强模式中用于较低阻抗的常导耗尽型晶体管,然后在持续的过电流条件期间晶体管被偏置成阻塞耗尽模式以阻断电流到电路。 可选地,这些设备仅具有两个端子,并且不需要辅助电源来操作。 其他情况为晶体管的栅极提供保护电路,设计用于忽略短路有害尖峰的定时电路和/或延迟复位器件的定时电路,直到电流恢复到可接受的水平。