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    JET MILLING OF BORON POWDER USING INERT GASES TO MEET PURITY REQUIREMENTS
    2.
    发明申请
    JET MILLING OF BORON POWDER USING INERT GASES TO MEET PURITY REQUIREMENTS 审中-公开
    使用优质气体喷射硼砂粉以满足稀释要求

    公开(公告)号：US20120325942A1

    公开(公告)日：2012-12-27

    申请号：US13169103

    申请日：2011-06-27

    申请人： James Michael Lustig ,  Jeffrey L. Johanning

    发明人： James Michael Lustig ,  Jeffrey L. Johanning

    IPC分类号： B02C19/06

    CPC分类号： B02C19/06 ,  C01B35/023

    摘要： A processing system and associated method for milling boron with impurity contamination avoidance. The system includes a jet mill for reducing the particle size of a boron feed stock, and a feed stock inlet for delivering the boron feed stock toward the jet mill. The system includes at least one inlet for delivering at least one gas into the jet mill. The gas and the boron feed stock comingle within the jet mill during milling reduction of boron particle size. The system includes a source of the at least one gas operatively connected to the at least one inlet, with the at least one gas being a gas that avoids transferring impurity during milling reduction of boron particle size.

    摘要翻译： 一种用于研磨硼和杂质污染避免的相关方法。 该系统包括用于减少硼原料的粒度的喷射式粉碎机和用于将硼原料输送到喷射式粉碎机的原料入口。 该系统包括用于将至少一种气体输送到喷射式粉碎机中的至少一个入口。 在硼粒度的研磨还原过程中，气体和硼原料在喷射磨中混合。 该系统包括可操作地连接到至少一个入口的至少一种气体的源，其中至少一种气体是避免在硼粒度的研磨还原期间传输杂质的气体。

    METHODS OF PREPARING CLUSTERBORON
    5.
    发明申请
    METHODS OF PREPARING CLUSTERBORON 有权
    聚醚砜的制备方法

    公开(公告)号：US20110195009A1

    公开(公告)日：2011-08-11

    申请号：US12741198

    申请日：2008-11-03

    申请人： Kevin S. Cook

    发明人： Kevin S. Cook

    IPC分类号： C01B6/06

    CPC分类号： C01B6/10 ,  C01B35/023

    摘要： The invention provides new methods for synthesis of ClusterBoron (B18H22). Preferred methods of the invention include in situ generation of the conjugate acid of B20H182− and degradation of the acid in solution to produce B18H22 in high yields and high purity. The invention further provides isotopically enriched boranes, particularly isotopically enriched 10B)18H22 and 11B18H22.

    摘要翻译： 本发明提供了用于合成ClusterBoron（B18H22）的新方法。 本发明的优选方法包括原位产生B20H182-的共轭酸，并在溶液中降解酸以产生高产率和高纯度的B18H22。 本发明还提供同位素富集的硼烷，特别是同位素富集的10B）18H22和11B18H22。

    Process of producing compact boron, particularly in monocrystalline form
    8.
    发明授权
    Process of producing compact boron, particularly in monocrystalline form 失效
    生产紧密硼，特别是单晶形式的方法

    公开(公告)号：US3160476A

    公开(公告)日：1964-12-08

    申请号：US17749662

    申请日：1962-03-05

    申请人： SIEMENS AG

    发明人： ERHARD SIRTL

    IPC分类号： C01B35/02 ,  C23C16/28 ,  C30B25/00 ,  C30B25/02

    CPC分类号： C30B25/00 ,  C01B35/023 ,  C23C16/28 ,  C30B25/02 ,  C30B29/02

    摘要： Monocrystalline boron is prepared by passing a stream of reaction gas containing a halogen-containing boron compound and purified hydrogen over a heated carrier element, whereby boron is deposited on said carrier, and adding initially to the reaction gas a hydrogen halide which displaces the teaction equilibrium in favour of combined boron, in such a proportion that the temperature T0 at which boron removal from the carrier by reverse reaction commences, is disposed at most 200 DEG C. below the temperature T at which the boron liberation reaction is carried out and the boron liberation is completely stopped below the temperature T0. The hydrogen halide added is preferably the one formed during the reaction, e.g. HCl or HBr and the boron compounds may be BCl3, BClBr2 or BBr2Cl. The carrier is rod shaped or filamentary and may be of moulded boron, e.g. presintered boron powder or monocrystalline boron and is crystallographically oriented so that the rod axis lies in a crystal alignment which corresponds to a determined preferential growth alignment. The carrier is heated electrically to a temperature not below 1200 DEG K, a low temperature modification of boron being formed at 1300 DEG K and a high temperature form at 1700 DEG K. The surface may be cleaned by etching and purifying in a high vacuum, or by heating in a current of pure H2 and the vessel flushed out with a H2 flow containing at least 10 mol. % of hydrogen halide. Alternatively the oxide film is a multiple of the layer thickness of the oxide film is removed by heating in a gas mixture containing a hydrogen halide in such quantity that neither B nor Si (impurity) are deposited and thereafter reducing the supply of halide so that boron only is deposited. The temperature of the carrier and the mol. ratios of the reaction gases are adjusted so that the temperature lies below the minimum separation temperature of silicon but above that of boron. If required, the quantity of silicon deposited may be controlled by varying the hydrogen halide concentration. The atomic ratio of B : H is preferably at least 2%, e.g. the mol. ratio of BCl3 : H2 may be 1 : 10 and the maximum Si : B ratio is 0.1%. The reaction gas may be prepared by passing pure hydrogen through an evaporation vessel containing a liquid halogen containing boron compound, e.g BCl3, some of which is converted to hydrogen halide by water and using the hydrogen leaving the vessel as reaction gas. Waste gas after passage over the carrier may be reused for a second carrier element. Doped boron may be prepared using elements of Group II and IV in the form of their gaseous compounds, e.g. beryllium halides and compounds of carbon and silicon. The reaction chamber may be lined with corundum and the remaining parts made of glasses using aluminium borate in combination with quartz-like AlPO4, BPO4.