Abstract:
A lighting apparatus for emitting white light including a semiconductor light source emitting radiation with a peak emission between from about 250 nm to about 500 nm and a first phosphor having a peak emission between about 550 and 615 nm, wherein an overall emission spectrum of the lighting apparatus has a depression between about 550 and 615 nm, whereby the red-green color contrast is increased versus a reference illuminant.
Abstract:
A light source device is provided. The light source device comprises a semiconductor light-emitting element; and a wavelength conversion member for converting a wavelength of a light emitted from the semiconductor light-emitting element. The semiconductor light-emitting element has a light-emitting peak wavelength of not less than 380 nanometers and not more than 420 nanometers. The light emitted from the semiconductor light-emitting element has a light energy density of not less than 0.2 kW/cm2. The wavelength conversion member contains at least one fluorescent substance selected from the group consisting of a (Sr1-x,Bax)3MgSi2O8:Eu2+ (0≦x≦1) fluorescent substance, a (Y1-y,Gdy)3(Al1-z,Gaz)5O12:Ce3+ (0≦y
Abstract translation:提供光源装置。 光源装置包括半导体发光元件; 以及用于转换从半导体发光元件发射的光的波长的波长转换构件。 半导体发光元件的发光峰值波长不小于380纳米且不超过420纳米。 从半导体发光元件发出的光的光能密度不小于0.2kW / cm 2。 波长转换构件包含选自由(Sr1-x,Bax)3MgSi2O8:Eu2 +(0&amp; nEE,x&nlE; 1)荧光物质,(Y1-y,Gdy)3(Al1-z) ,Gaz)5O12:Ce3 +(0&nlE; y <1,0
Abstract:
Direct synthesis methods are generally provided that include reacting Na2(WO4).2H2O (and/or Na2(GeO4).2H2O) with NaF in an inert atmosphere at a reaction temperature of about 950° C. to about 1400° C., along with the resulting structures and compositions.
Abstract:
A light-emitting element of the present invention includes (i) a light-emitting layer (109), (ii) an electrode layer (110) being transparent to part of light emitted from the light-emitting layer (109), (iii) color converting layers (113, 114), and (iv) a transparent layer (115). The color converting layers (113, 114) and the transparent layer (115) sandwich the transparent electrode layer (110) with the light-emitting layer (109). The color converting layers (113, 114) and the transparent electrode layer (115) contain particles (116, 117, 118) expressing a surface plasmon phenomenon, respectively.
Abstract:
The present invention provides a blue phosphor that exhibits high luminance and shows less luminance degradation during driving of a light-emitting device. The present invention is a blue phosphor represented by the general formula aBaO.bSrO.(1−a−b)EuO.cMgO.dAlO3/2.eWO3, where 0.70≦a≦0.95, 0≦b≦0.15, 0.95≦c≦1.15, 9.00≦d≦11.00, 0.001≦e≦0.100, and a+b≦0.97 are satisfied. In this blue phosphor, two peaks whose tops are located in a range of diffraction angle 2θ=13.0 to 13.6 degrees are present in an X-ray diffraction pattern obtained by measurement on the blue phosphor using an X-ray with a wavelength of 0.774 Å.
Abstract:
A light-emitting element of the present invention includes (i) a light-emitting layer (109), (ii) an electrode layer (110) being transparent to part of light emitted from the light-emitting layer (109), (iii) color converting layers (113, 114), and (iv) a transparent layer (115). The color converting layers (113, 114) and the transparent layer (115) sandwich the transparent electrode layer (110) with the light-emitting layer (109). The color converting layers (113, 114) and the transparent electrode layer (115) contain particles (116, 117, 118) expressing a surface plasmon phenomenon, respectively.
Abstract:
Disclosed are nitride red phosphors and white light emitting diodes using the same. More particularly, the present invention provides a nitride red phosphor with easily controlled composition of phosphor fraction and improved uniformity and color gamut thereof, a method for preparation thereof, a white light emitting diode with excellent color rendition and high light emitting efficiency, and a white light emitting diode package using the same.
Abstract:
A light emitting device that light of various colors by blending lights emitted by two or more kinds of fluorescent materials which are substantially directly excited by light emitted by an excitation source having principal emission peak in a range from 250 nm to 500 nm. Each of the fluorescent materials is of a direct-transition type.
Abstract:
A lighting apparatus for emitting white light including a semiconductor light source emitting radiation with a peak emission between from about 250 nm to about 500 nm and a first phosphor having a peak emission between about 550 and 615 nm, wherein an overall emission spectrum of the lighting apparatus has a depression between about 550 and 615 nm, whereby the red-green color contrast is increased versus a reference illuminant.
Abstract:
A red phosphor composition in combination with a semiconductor light emitting device (e.g., VCSEL, LED, or LD), preferably a GaN based device, that emits light at a bright violet- blue light range, i.e., having a wavelength in the range of 400 nm to 600 nm, which can be further combined with green and blue phosphors. The red phosphor composition in the combination is a vanadate combined with yttrium, gadolinium and/or lanthanum and activated with trivalent Eu3+, Sm3+and Pr3+, or any combination thereof, with or without Tb3+as a co-dopant, has the general formula: Bix,Ln1-xVO4:A where x =0 to 1, Ln is an element selected from the group consisting of Y, La and Gd, and A is an activator selected from Eu3+, Sm3+and Pr3+, or any combination thereof, with or without Tb3+as a co-dopant. Novel red phosphor compositions are provided when x is greater than 0 and less than 1, preferably 0.05 to 0.5.
Abstract translation:一种红色荧光体组合物,与发光在明亮的紫色 - 蓝色光范围的半导体发光器件(例如,VCSEL,LED或LD)(优选GaN基器件)组合,即具有波长在 400nm至600nm,其可以进一步与绿色和蓝色荧光体组合。 组合中的红色荧光体组合物是与钇,钆和/或镧结合的钒酸盐,并用三价Eu 3+,Sm 3+和Pr 3 +或其任何组合,具有或不具有作为共掺杂剂的Tb 3+,具有以下通式:Bi 1 x L 1,L n 1 其中x = 0至1,Ln是选自Y,La和Gd中的元素,A是选自Eu 3 +,Sm 3+和/或3+,或其任何组合,具有或不具有Tb 3+ 共掺杂物。 当x大于0且小于1,优选为0.05至0.5时,提供新的红色荧光粉组合物。