VACUUM HEAT TREATMENT APPARATUS
    3.
    发明申请
    VACUUM HEAT TREATMENT APPARATUS 有权
    真空热处理设备

    公开(公告)号:US20140127635A1

    公开(公告)日:2014-05-08

    申请号:US14130251

    申请日:2012-06-28

    Abstract: A vacuum heat treatment apparatus according to the embodiment comprises a chamber; a thermal insulator in the chamber; a reaction container in the thermal insulator; a heating member between the reaction container and the the thermal insulator for heating the reaction container; and a temperature measuring member in or on a surface of the reaction container, wherein the temperature measuring member comprises a thermocouple and a protective tube surrounding the thermocouple, and the protective tube comprises tungsten (W), tantalum (Ta), or silicon carbide (SiC).

    Abstract translation: 根据实施例的真空热处理装置包括室; 腔室中的绝热体; 热绝缘体中的反应容器; 反应容器和用于加热反应容器的绝热体之间的加热构件; 和温度测量部件,其中所述温度测量部件包括热电偶和围绕所述热电偶的保护管,所述保护管包括钨(W),钽(Ta)或碳化硅( SiC)。

    FURNACE
    4.
    发明申请
    FURNACE 审中-公开

    公开(公告)号:US20130017504A1

    公开(公告)日:2013-01-17

    申请号:US13473215

    申请日:2012-05-16

    Abstract: Disclosed herein is a furnace, including: a body having a space formed therein; a plurality of thermocouples disposed in the body and vertically movably coupled with the body; a plurality of heating elements dispose in the body; and a control unit that receives temperature data from the thermocouples to control temperature of the heating elements, whereby the furnace can measure and control the temperature for each portion of the internal space to form uniform temperature distribution, in particular, make temperature distribution of the heat applied to the fired matter uniform to obtain high-quality fired matter.

    Abstract translation: 本文公开了一种炉,包括:具有形成在其中的空间的主体; 多个热电偶,其布置在所述主体中并与所述主体垂直地可移动地联接; 多个加热元件配置在体内; 以及控制单元,其接收来自热电偶的温度数据以控制加热元件的温度,由此炉子可以测量和控制内部空间的每个部分的温度,以形成均匀的温度分布,特别是使得热量的温度分布 适用于烧制物均匀,以获得高品质的发射物质。

    Temperature measurement apparatus, method of estimating temperature profile, recording medium and heat treatment apparatus
    7.
    发明授权
    Temperature measurement apparatus, method of estimating temperature profile, recording medium and heat treatment apparatus 有权
    温度测量装置,温度曲线估计方法,记录介质和热处理装置

    公开(公告)号:US08992079B2

    公开(公告)日:2015-03-31

    申请号:US13478304

    申请日:2012-05-23

    Abstract: A temperature measurement apparatus for estimating a temperature profile in a process container, includes a radiation temperature measurement unit configured to measure the temperature of plural temperature measurement areas at a surface of the rotating table in a radius direction of the rotating table by scanning the surface of the rotating table in the radius direction; an operation control unit that controls to start heating of the process container by a heater while keeping the rotating table immobilized, and controls to repeat a scanning operation, in which the radiation temperature measurement unit scans the surface of the rotating table in the radius direction to obtain the temperature of the plural temperature measurement areas while the rotating table is rotated in a circumferential direction of the rotating table, after a predetermined period has passed from starting the heating of the process container.

    Abstract translation: 一种用于估计处理容器中的温度分布的温度测量装置,包括:辐射温度测量单元,被配置为通过扫描旋转台的表面在旋转台的半径方向上测量旋转台的表面处的多个温度测量区域的温度 旋转台在半径方向; 操作控制单元,其通过加热器控制开始加热处理容器,同时保持旋转台的固定,并且控制重复扫描操作,其中辐射温度测量单元将半径方向上的旋转台的表面扫描到 在开始处理容器的加热经过预定时间之后,在旋转台沿旋转台的圆周方向旋转的同时,获得多个温度测量区域的温度。

    APPARATUS AND METHOD FOR CONTROLLING HEATING OF BASE WITHIN CHEMICAL VAPOUR DEPOSITION CHAMBER
    8.
    发明申请
    APPARATUS AND METHOD FOR CONTROLLING HEATING OF BASE WITHIN CHEMICAL VAPOUR DEPOSITION CHAMBER 有权
    用于控制在化学气相沉积室中加热基质的装置和方法

    公开(公告)号:US20150024330A1

    公开(公告)日:2015-01-22

    申请号:US14386765

    申请日:2013-03-21

    Abstract: Provided are an apparatus and a method for controlling the heating of the base within a chemical vapour deposition chamber, which apparatus is applicable to an MOCVD reaction chamber. The apparatus comprises a heater located within a chamber; a tray located near the heater within the chamber and spaced apart from the heater and used for carrying the base; a first temperature control unit coupled with a surface of the tray for carrying the base and used for measuring the temperature of the tray surface and outputting a first control signal as a function of a set temperature and the temperature of the tray surface; and a second temperature control unit connected to the first temperature control unit and used for measuring the temperature of the middle of the area between the tray and the heater, and also for outputting a second control signal as a function of the first control signal and the temperature of the middle, with the heater being coupled with the second temperature control unit to heat according to the second control signal. Further provided is a method for controlling the heating of the base within a chemical vapour deposition chamber. A steady base temperature can be obtained via the apparatus.

    Abstract translation: 提供了一种用于控制化学气相沉积室内的基底加热的装置和方法,该装置可应用于MOCVD反应室。 该装置包括位于室内的加热器; 位于室内的加热器附近并与加热器间隔开并用于承载基座的托盘; 第一温度控制单元,与托盘的表面耦合,用于承载基座并用于测量托盘表面的温度,并输出作为托盘表面的设定温度和温度的函数的第一控制信号; 以及第二温度控制单元,连接到第一温度控制单元,并用于测量托盘和加热器之间的区域的中间的温度,并且还用于输出作为第一控制信号的函数的第二控制信号, 中间的温度,加热器与第二温度控制单元耦合,以根据第二控制信号加热。 还提供了一种用于控制化学气相沉积室内的基底的加热的方法。 可以通过该装置获得稳定的基础温度。

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