Omnidirectional measurement system for time-varying characteristic of atmospheric vapor radiation

    公开(公告)号:US20240060825A1

    公开(公告)日:2024-02-22

    申请号:US18385414

    申请日:2023-10-31

    Abstract: An omnidirectional measurement system for a time-varying characteristic of atmospheric vapor radiation includes an antenna and calibrator assembly, a receiver assembly, a room temperature IF assembly, and a data acquisition and system control assembly. Atmospheric vapor features a wide profile and strong radiation in a frequency band of 183 GHz, and is often seen in the characteristic measurement of atmospheric vapor in high-altitude areas. The omnidirectional measurement system combines a superconductor-insulator-superconductor (SIS) mixer with high detection sensitivity in the frequency band of 183 GHz with a structure that integrates pitch scanning, omnidirectional scanning, and automatic calibration to achieve fast and high-precision omnidirectional scanning measurement of the time-varying characteristic of atmospheric vapor radiation. The omnidirectional measurement system has a pitch adjustment-based fast omnidirectional scanning function, and can measure the time-varying characteristic of atmospheric vapor radiation with higher precision and higher temporal resolution through the SIS mixer with higher sensitivity.

    METHOD FOR MEASURING TEMPERATURE
    2.
    发明公开

    公开(公告)号:US20230343616A1

    公开(公告)日:2023-10-26

    申请号:US18194651

    申请日:2023-04-03

    Inventor: Yukio ONO Mao OMORI

    CPC classification number: H01L21/67248 G01J5/0096 G01J5/806 H01L21/67115

    Abstract: An edge radiation thermometer performs measurements before a semiconductor wafer is transported into a chamber. The edge radiation thermometer performs the measurements while the semiconductor wafer is supported by lift pins and while the semiconductor wafer is placed on a susceptor, after the semiconductor wafer is transported into the chamber. A controller calculates a reflectivity of the semiconductor wafer based on these measurement values. Then, the controller calculates an intensity of an ambient light receive by the edge radiation thermometer, based on the reflectivity and an intensity of synchrotron radiation radiated from a quartz window. Subsequently, the controller subtracts the intensity of the ambient light from an intensity of light received by of the edge radiation thermometer during heat treatment on the semiconductor wafer to calculate the temperature of the semiconductor wafer.

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