公开(公告)号：US20230207348A1

公开(公告)日：2023-06-29

申请号：US17926642

申请日：2021-05-25

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Yukio ONO ,  Takahiro YAMADA ,  Makoto ABE

IPC: H01L21/67 ,  H01L21/687

CPC classification number: H01L21/67115 ,  H01L21/6875 ,  H01L21/67248 ,  H01L21/68742 ,  H01L21/68785

Abstract: A plurality of substrate support pins are erected on a susceptor that holds a semiconductor wafer that is an object being treated. The plurality of substrate support pins are set in a ring shape at equal intervals. A flash lamp irradiates the semiconductor wafer supported by the plurality of substrate support pins with flash light to heat the semiconductor wafer. The radius of a setting circle in which the plurality of substrate support pins are set is made larger as the pulse width of flash light emitted from the flash lamp decreases. To irradiate the semiconductor wafer with flash light while having the semiconductor wafer supported by the plurality of substrate support pins can prevent cracking of the semiconductor wafer despite possible abrupt deformation of the semiconductor wafer due to the flash-light irradiation.

公开(公告)号：US20230018090A1

公开(公告)日：2023-01-19

申请号：US17777586

申请日：2020-10-21

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Takahiro KITAZAWA ,  Yukio ONO ,  Oma NAKAJIMA

IPC: H01L21/67

Abstract: Even a radiation thermometer using a quantum infrared sensor appropriately measures the temperature of a substrate irradiated with a flash of light. A heat treatment apparatus includes a quantum infrared sensor configured to measure a temperature of the first substrate and a temperature of the second substrate. The heat treatment apparatus further includes a temperature correction unit configured to correct, using a correction coefficient calculated based on the reference temperature and the shift temperature, a temperature of the second substrate on which second heat treatment having irradiation with the flash of light is performed, the temperature being measured by the quantum infrared sensor.

公开(公告)号：US20190181057A1

公开(公告)日：2019-06-13

申请号：US16277460

申请日：2019-02-15

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Yukio ONO

IPC: H01L21/66 ,  H01L21/67 ,  C23C14/02 ,  H01L21/225 ,  C23C14/48 ,  H01L21/324

Abstract: A susceptor is preheated through light irradiation by a halogen lamp before the first semiconductor wafer of a lot as a processing target is transferred into a chamber. The temperature of the susceptor is measured by a radiation thermometer. A control unit is configured to control the output of the halogen lamp so that the temperature of the susceptor reaches a stable temperature based on a result of the measurement of the temperature of the susceptor by the radiation thermometer. The stable temperature of the susceptor is the temperature of the susceptor when the temperature of the susceptor is risen to a constant temperature by continuously performing light irradiation heating on a plurality of semiconductor wafers in the chamber without heating the susceptor.

公开(公告)号：US20180358234A1

公开(公告)日：2018-12-13

申请号：US16001525

申请日：2018-06-06

Applicant: SCREEN HOLDINGS CO., LTD.

Inventor： Yukio ONO

IPC: H01L21/324 ,  H01L21/265

Abstract: A semiconductor wafer to be treated is placed on a susceptor made of quartz installed in a chamber, and is heated by light irradiation from halogen lamps. Before the first semiconductor wafer of a production lot is transported into the chamber, a preheating substrate is placed on the susceptor. Then, the preheating substrate is heated by light irradiation from the halogen lamps to preheat the susceptor. The susceptor is heated to a preheating temperature higher than a stable temperature when the semiconductor wafers of the production lot are continuously treated. This enables a structure in the chamber, other than the susceptor, to be preheated to a temperature during steady treatment of the semiconductor wafer in a short time, so that it is possible to eliminate dummy running for heating the structure in the chamber by applying heating treatment to a plurality of dummy wafers.

公开(公告)号：US20180151455A1

公开(公告)日：2018-05-31

申请号：US15884456

申请日：2018-01-31

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Yukio ONO

IPC: H01L21/66 ,  H01L21/67 ,  C23C14/02 ,  H01L21/225 ,  C23C14/48 ,  H01L21/324

CPC classification number: H01L22/20 ,  C23C14/02 ,  C23C14/48 ,  H01L21/2253 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67248

Abstract: A susceptor is preheated through light irradiation by a halogen lamp before the first semiconductor wafer of a lot as a processing target is transferred into a chamber. The temperature of the susceptor is measured by a radiation thermometer. A control unit is configured to control the output of the halogen lamp so that the temperature of the susceptor reaches a stable temperature based on a result of the measurement of the temperature of the susceptor by the radiation thermometer. The stable temperature of the susceptor is the temperature of the susceptor when the temperature of the susceptor is risen to a constant temperature by continuously performing light irradiation heating on a plurality of semiconductor wafers in the chamber without heating the susceptor.

公开(公告)号：US20170125312A1

公开(公告)日：2017-05-04

申请号：US15334375

申请日：2016-10-26

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Yukio ONO

IPC: H01L21/66 ,  H01L21/225 ,  H01L21/324 ,  H01L21/67 ,  C23C14/02 ,  C23C14/48

CPC classification number: H01L22/20 ,  C23C14/02 ,  C23C14/48 ,  H01L21/2253 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67248

Abstract: A susceptor is preheated through light irradiation by a halogen lamp before the first semiconductor wafer of a lot as a processing target is transferred into a chamber. The temperature of the susceptor is measured by a radiation thermometer. A control unit is configured to control the output of the halogen lamp so that the temperature of the susceptor reaches a stable temperature based on a result of the measurement of the temperature of the susceptor by the radiation thermometer. The stable temperature of the susceptor is the temperature of the susceptor when the temperature of the susceptor is risen to a constant temperature by continuously performing light irradiation heating on a plurality of semiconductor wafers in the chamber without heating the susceptor.

公开(公告)号：US20230343616A1

公开(公告)日：2023-10-26

申请号：US18194651

申请日：2023-04-03

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Yukio ONO ,  Mao OMORI

IPC: G01J5/00 ,  G01J5/80 ,  H01L21/67

CPC classification number: H01L21/67248 ,  G01J5/0096 ,  G01J5/806 ,  H01L21/67115

Abstract: An edge radiation thermometer performs measurements before a semiconductor wafer is transported into a chamber. The edge radiation thermometer performs the measurements while the semiconductor wafer is supported by lift pins and while the semiconductor wafer is placed on a susceptor, after the semiconductor wafer is transported into the chamber. A controller calculates a reflectivity of the semiconductor wafer based on these measurement values. Then, the controller calculates an intensity of an ambient light receive by the edge radiation thermometer, based on the reflectivity and an intensity of synchrotron radiation radiated from a quartz window. Subsequently, the controller subtracts the intensity of the ambient light from an intensity of light received by of the edge radiation thermometer during heat treatment on the semiconductor wafer to calculate the temperature of the semiconductor wafer.

公开(公告)号：US20200335366A1

公开(公告)日：2020-10-22

申请号：US16960923

申请日：2018-10-03

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Yukio ONO

IPC: H01L21/67 ,  H01L21/268 ,  H01L21/324

Abstract: Before a start of a treatment of a semiconductor wafer to be treated first in a lot, a dummy wafer is transported into a chamber, and an atmosphere including a helium gas having high thermal conductivity is formed. When the dummy wafer is heated with light irradiation from halogen lamps, heat transfer from the dummy wafer the temperature of which has increased occurs at an upper chamber window and a lower chamber window, with the helium gas as a heating medium. At the time when the semiconductor wafer to be treated first is transported into the chamber, the upper chamber window and the lower chamber window are heated, which makes a temperature history of all the semiconductor wafers in the lot uniform. It is thus possible to omit dummy running.

公开(公告)号：US20180240681A1

公开(公告)日：2018-08-23

申请号：US15882271

申请日：2018-01-29

Applicant: SCREEN HOLDINGS CO., LTD.

Inventor： Yukio ONO ,  Kaoru Matsuo ,  Kazuhiko Fuse

IPC: H01L21/324 ,  H01L21/67 ,  H01J61/90

CPC classification number: H01L21/324 ,  H01J61/90 ,  H01L21/2686 ,  H01L21/67115 ,  H01L21/68707 ,  H01L21/6875

Abstract: When pressure in a chamber is once reduced lower than that when a flash of light is emitted and is maintained, after a flash lamp irradiates a semiconductor wafer accommodated in the chamber with the flash of light, a portion in the chamber, where gas is liable to remain, is eliminated. Then, when a flow rate of nitrogen gas to be supplied into the chamber is increased to discharge gas in the chamber, particles flying in the chamber due to flash irradiation can be smoothly discharged. As a result, the particles flying in the chamber can be prevented from being attached to an additional semiconductor wafer.