Non-radioactive ion source using high energy electrons
    1.
    发明授权
    Non-radioactive ion source using high energy electrons 有权
    使用高能电子的非放射性离子源

    公开(公告)号:US09006678B2

    公开(公告)日:2015-04-14

    申请号:US13960006

    申请日:2013-08-06

    摘要: A system and method for producing a continuous or pulsed source of high energy electrons at or near atmospheric pressure is disclosed. High energy electrons are used to ionize analyte molecules in ambient air through collisions with reactant ions. The device includes an electron emitter, electron optics, and a thin membrane in an evacuated tube. The electron emitter may include a photocathode surface mounted on an optically transparent window and an external source of UV photons. The transparent window may include a UV transparent window mounted on an evacuated tube and/or the evacuated tube may be a transparent tube on which a photocathode surface film is deposited. The electron optics may include successive electrodes biased at increasing voltages. The membrane may include a material transparent or semi-transparent to energetic electrons. Upon impacting the membrane, continuous or pulsed electron packets are partially transmitted through to a high pressure ionization region.

    摘要翻译: 公开了一种在大气压或接近大气压下产生高能电子的连续或脉冲源的系统和方法。 高能电子用于通过与反应物离子的碰撞使环境空气中的分析物分子电离。 该装置包括电子发射器,电子光学器件和真空管中的薄膜。 电子发射器可以包括安装在光学透明窗口和外部UV光子源上的光电阴极表面。 透明窗口可以包括安装在真空管上的UV透明窗口和/或真空管可以是其上沉积有光电阴极表面膜的透明管。 电子光学器件可以包括以增加的电压偏置的连续电极。 膜可以包括对高能电子透明或半透明的材料。 在撞击膜时,连续的或脉冲的电子包被部分地传输到高压电离区域。

    Fast switch utilizing hybrid electron-beam-semiconductor devices
    2.
    发明授权
    Fast switch utilizing hybrid electron-beam-semiconductor devices 失效
    快速开关使用混合电子束半导体器件

    公开(公告)号:US3676716A

    公开(公告)日:1972-07-11

    申请号:US3676716D

    申请日:1971-05-19

    申请人: US NAVY

    发明人: HANRAHAN DONALD J

    摘要: A fast switching device employing at least two semiconductor p-n junction devices in a back-to-back arrangement with the voltage which is to be switched applied across the semiconductor devices. If the output is to be a replica of the switched voltage, the latter is also applied to control an electron beam which irradiates one or both semiconductor devices when the switch is to be closed. A square-wave output can be produced by utilizing an electron beam which is not proportional to the switched voltage but is simply turned on and off in synchronism with it and has a constant value when it is on.