公开(公告)号：US09069035B2

公开(公告)日：2015-06-30

申请号：US13333433

申请日：2011-12-21

申请人： Dong Chen

发明人： Dong Chen

IPC分类号： G06F19/00 ,  G01R27/00 ,  G01R31/26 ,  H05B31/00 ,  F21V8/00 ,  F21Y103/00 ,  G01R31/265

CPC分类号： G01R31/2648 ,  F21V29/83 ,  F21V2200/00 ,  F21Y2103/00 ,  G01R31/2656 ,  H05B31/00 ,  H05B2206/00

摘要： A diode model and conductive-probe measurements taken at the wafer lever are used to predict the characterization parameters of a semiconductor device manufactured from the wafer. A current-voltage curve (I-V) model that expresses a current-voltage relationship as a function of resistance, ideality factor, and reverse saturation current is fitted to a number of conductive-probe measurement data. The current-voltage curve (I-Vd) for the device is then estimated by subtracting from the (I-V) model the product of current times the resistance produced by fitting the (I-V) model.

摘要翻译： 使用在晶圆杠杆处获取的二极管模型和导电探针测量来预测从晶片制造的半导体器件的表征参数。 表示作为电阻，理想因子和反向饱和电流的函数的电流 - 电压关系的电流 - 电压曲线（I-V）模型拟合到多个导电探针测量数据。 然后通过从（I-V）模型中减去当前乘积乘以（I-V）模型产生的电阻的乘积，来估计器件的电流 - 电压曲线（I-Vd）。

公开(公告)号：US09726714B2

公开(公告)日：2017-08-08

申请号：US15058875

申请日：2016-03-02

申请人： SII Semiconductor Corporation

发明人： Tomoki Hikichi

IPC分类号： G01R31/10 ,  G01R31/28

CPC分类号： G01R31/2829 ,  G01R31/2856 ,  G01R31/2875 ,  H05B2203/00 ,  H05B2206/00 ,  H05B2213/00

摘要： To provide a sensor device which is capable of high temperature detection using self-heat generation without providing a dedicated terminal and suppresses an increase in cost with an increase in chip occupation area due to the addition of a test pad. A sensor device is configured to include an active logic switching circuit for switching an active logic of an output driver and perform a heating inspection while switching the active logic of the output driver during an inspection process with the output driver as a heat generation source.

公开(公告)号：US20130046496A1

公开(公告)日：2013-02-21

申请号：US13333433

申请日：2011-12-21

申请人： Dong CHEN

发明人： Dong CHEN

IPC分类号： G06F19/00 ,  G01R27/00

CPC分类号： G01R31/2648 ,  F21V29/83 ,  F21V2200/00 ,  F21Y2103/00 ,  G01R31/2656 ,  H05B31/00 ,  H05B2206/00

摘要： A diode model and conductive-probe measurements taken at the wafer lever are used to predict the characterization parameters of a semiconductor device manufactured from the wafer. A current-voltage curve (I-V) model that expresses a current-voltage relationship as a function of resistance, ideality factor, and reverse saturation current is fitted to a number of conductive-probe measurement data. The current-voltage curve (I-Vd) for the device is then estimated by subtracting from the (I-V) model the product of current times the resistance produced by fitting the (I-V) model.

公开(公告)号：US20130043875A1

公开(公告)日：2013-02-21

申请号：US13332657

申请日：2011-12-21

申请人： DONG CHEN

发明人： DONG CHEN

IPC分类号： G01R31/26

CPC分类号： G01R31/2648 ,  F21V29/83 ,  F21V2200/00 ,  F21Y2103/00 ,  G01R31/2656 ,  H05B31/00 ,  H05B2206/00

摘要： Forward voltage drift in a probe system for the characterization of a light-emitting wafer is virtually eliminated by directing compressed air to the probe so as to ensure that the exact same temperature conditions exist during repeated measurements of the wafer. In one embodiment of the invention, an air flow at room temperature is used, either continuously or intermittently. In another embodiment, the temperature of the probe is controlled by flowing a liquid or a gas through micro-channels built into the probe. In yet another embodiment, the probe is connected to a solid-state Peltier cell that is computer-controlled to maintain the probe's temperature at a predetermined set-point. A temperature-controlled chamber or a thermal reservoir enclosing the probe could be used as well. The results obtained showed remarkable repeatability.

摘要翻译： 用于表征发光晶片的探针系统中的正向电压漂移实际上通过将压缩空气引导到探针来消除，以确保在晶片的重复测量期间存在完全相同的温度条件。 在本发明的一个实施方案中，连续地或间歇地使用室温下的空气流。 在另一个实施例中，通过将液体或气体流经内置于探针中的微通道来控制探针的温度。 在另一个实施例中，探针连接到被计算机控制的固态珀耳帖细胞，以将探针的温度保持在预定的设定点。 也可以使用温度控制室或包围探针的热储存器。 获得的结果显示出显着的重复性。

公开(公告)号：US20160258995A1

公开(公告)日：2016-09-08

申请号：US15058875

申请日：2016-03-02

申请人： SII Semiconductor Corporation

发明人： Tomoki HIKICHI

IPC分类号： G01R31/28

CPC分类号： G01R31/2829 ,  G01R31/2856 ,  G01R31/2875 ,  H05B2203/00 ,  H05B2206/00 ,  H05B2213/00

摘要： To provide a sensor device which is capable of high temperature detection using self-heat generation without providing a dedicated terminal and suppresses an increase in cost with an increase in chip occupation area due to the addition of a test pad. A sensor device is configured to include an active logic switching circuit for switching an active logic of an output driver and perform a heating inspection while switching the active logic of the output driver during an inspection process with the output driver as a heat generation source.

摘要翻译： 提供一种传感器装置，其能够在不提供专用端子的情况下使用自发热进行高温检测，并且由于添加了测试垫而增加了芯片占用面积，从而抑制了成本的增加。 传感器装置被配置为包括用于切换输出驱动器的有源逻辑的有源逻辑切换电路，并且在检查过程期间以输出驱动器作为发热源切换输出驱动器的有源逻辑，并执行加热检查。

公开(公告)号：US09057757B2

公开(公告)日：2015-06-16

申请号：US13332657

申请日：2011-12-21

申请人： Dong Chen

发明人： Dong Chen

IPC分类号： G01R31/00 ,  G01R31/26 ,  H05B31/00 ,  F21V8/00 ,  F21Y103/00 ,  G01R31/265

CPC分类号： G01R31/2648 ,  F21V29/83 ,  F21V2200/00 ,  F21Y2103/00 ,  G01R31/2656 ,  H05B31/00 ,  H05B2206/00

摘要： Forward voltage drift in a probe system for the characterization of a light-emitting wafer is virtually eliminated by directing compressed air to the probe so as to ensure that the exact same temperature conditions exist during repeated measurements of the wafer. In one embodiment of the invention, an air flow at room temperature is used, either continuously or intermittently. In another embodiment, the temperature of the probe is controlled by flowing a liquid or a gas through micro-channels built into the probe. In yet another embodiment, the probe is connected to a solid-state Peltier cell that is computer-controlled to maintain the probe's temperature at a predetermined set-point. A temperature-controlled chamber or a thermal reservoir enclosing the probe could be used as well. The results obtained showed remarkable repeatability.

摘要翻译： 用于表征发光晶片的探针系统中的正向电压漂移实际上通过将压缩空气引导到探针来消除，以便确保在晶片的重复测量期间存在完全相同的温度条件。 在本发明的一个实施方案中，连续地或间歇地使用室温下的空气流。 在另一个实施例中，通过将液体或气体流经内置于探针中的微通道来控制探针的温度。 在另一个实施例中，探针连接到被计算机控制的固态珀耳帖细胞，以将探针的温度保持在预定的设定点。 也可以使用温度控制室或包围探针的热储存器。 获得的结果显示出显着的重复性。