公开(公告)号：US20040099534A1

公开(公告)日：2004-05-27

申请号：US10306641

申请日：2002-11-27

Inventor： James Powers

IPC: C25D007/12

CPC classification number: C25D17/10 ,  C25D7/123 ,  C25D17/001 ,  C25D17/12 ,  H01L21/2885

Abstract: A method, apparatus and anode for plating copper or other metals onto a barrier or seed layer of a wafer surface is described. A copper layer of uniform thickness is plated on the surface by, for instance, maintaining a constant current density between the anode and wafer surface. Several configurations of anodes are described for obtaining the constant current density.

Abstract translation: 描述了将铜或其它金属镀在晶片表面的阻挡层或晶种层上的方法，装置和阳极。 通过例如在阳极和晶片表面之间保持恒定的电流密度，在表面上镀覆均匀厚度的铜层。 描述了几种阳极配置以获得恒定电流密度。

公开(公告)号：US20030029732A1

公开(公告)日：2003-02-13

申请号：US10167757

申请日：2002-06-10

Inventor： Thomas L. Ritzdorf ,  Jeffrey I. Turner ,  Robert W. Berner

IPC: C25D007/12 ,  C25D011/32 ,  C25C007/00

CPC classification number: C25D17/001 ,  C25D7/123 ,  C25D17/10 ,  Y10S204/07

Abstract: A semiconductor workpiece holder used in electroplating systems for plating metal layers, such as copper, onto a semiconductor workpiece. The workpiece holder includes electrodes which extend and are partially submerged in a liquid plating bath. The electrodes have a contact face which bears against the workpiece and conducts current therebetween. The submersible portions of the electrodes are partially covered with a dielectric layer or surface and partially covered with a conductive layer or surface. The conductive surface is preferably spaced from the contact face and placed in direct contact with the plating bath to allow diversion of some of the plating current directly between the electrode and plating bath. Associated methods are also described.

公开(公告)号：US20020088715A1

公开(公告)日：2002-07-11

申请号：US10093185

申请日：2002-03-05

Applicant: NU-TOOL, INC.

Inventor： Homayoun Talieh ,  Bulent Basol

IPC: C25D007/12 ,  C25D017/00 ,  C25D011/32

CPC classification number: H01L21/6715 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/67075

Abstract: The present invention is directed to a method and apparatus for plating a surface of a semiconductor workpiece (wafer, flat panel, magnetic films, etc.) using a liquid conductor that makes contact with the outer surface of the workpiece. The liquid conductor is stored in a reservoir and pump through an inlet channel to the liquid chamber. The liquid conductor is injected into a liquid chamber such that the liquid conductor makes contact with the outer surface of the workpiece. An inflatable tube is also provided to prevent the liquid conductor from reaching the back face of the workpiece. A plating solution can be applied to the front face of the workpiece where a retaining ring/seal further prevents the plating solution and the liquid conductor from making contact with each other. In an alternative embodiment, electrical contacts may be formed using an inflatable tube that has either been coated with a conductive material or contains a conductive object. The inflatable tube further provides uniform contact and pressure along the periphery of the workpiece, which may not necessarily be perfectly flat, because the tube can conform according to the shape of the periphery of the workpiece. Further, the present invention can be used to dissolve/etch a metal layer from the periphery of the workpiece.

Abstract translation: 本发明涉及一种使用与工件的外表面接触的液体导体对半导体工件的表面（晶片，平板，磁性膜等）进行电镀的方法和装置。 液体导体储存在储存器中并通过入口通道泵送到液体室。 液体导体被注入到液体室中，使得液体导体与工件的外表面接触。 还设有可充气管以防止液体导体到达工件的背面。 可以将电镀液施加到工件的前表面，其中保持环/密封件进一步防止电镀溶液和液体导体彼此接触。 在替代实施例中，可以使用已经涂覆有导电材料或包含导电物体的可充气管来形成电接触。 可膨胀管还可以沿着工件的周边提供均匀的接触和压力，这可能不一定是完全平坦的，因为管可以根据工件的周边的形状来适应。 此外，本发明可用于从工件的周边溶解/蚀刻金属层。

公开(公告)号：US20020066665A1

公开(公告)日：2002-06-06

申请号：US09883574

申请日：2001-06-18

Inventor： Yasuhiko Sakaki

IPC: C25D007/12 ,  C25D017/00

CPC classification number: C25D17/001 ,  C25D7/123

Abstract: The present cup-type plating apparatus improves a conventional cup-type plating apparatus and prevents the surface of a wafer due to a mist of the plating solutions from being contaminated. A plating solution is supplied to a wafer which is placed on a wafer support provided along an opening at the top of a plating tank from a solution-supply port provided at the bottom of the plating tank by an upward-moving stream; the plating solution is made to flow out of a solution-outlet port provided for the plating tank; and plating is performed while the plating solution is brought into contact with a surface of the placed wafer, which is to be plated, wherein the solution-outlet port has a solution-outlet path in which the discharged plating solution is isolated from the outer space.

Abstract translation: 本杯式电镀装置改进了传统的杯型电镀装置，并且防止了由于电镀液雾引起的晶片表面的污染。 将电镀溶液供给到通过向上移动的流从设置在电镀槽底部的溶液供给口放置在电镀槽顶部的开口设置的晶片载体上的晶片; 使电镀液从设置于电镀槽的溶出口端口流出， 并且在电镀液与要被电镀的放置晶片的表面接触的同时进行电镀，其中溶出口具有溶出口路径，排出的电镀液与外部空间隔离 。

公开(公告)号：US20020043468A1

公开(公告)日：2002-04-18

申请号：US09976422

申请日：2001-10-12

Applicant: Shipley Company, L.L.C.

Inventor： Robert D. Mikkola ,  Jeffrey M. Calvert

IPC: C25D011/32 ,  C25D007/12 ,  C25D005/52 ,  C25D003/00 ,  C25D003/38

CPC classification number: C25D5/48 ,  C25D3/02 ,  C25D3/38 ,  C25D7/12 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76868 ,  H01L21/76873 ,  H01L2221/1089

Abstract: Disclosed are compositions useful for repair and electroplating of seed layers. Also disclosed are methods of repairing and electroplating such seed layers.

Abstract translation: 公开了可用于种子层的修复和电镀的组合物。 还公开了修复和电镀这种种子层的方法。

公开(公告)号：US20020029961A1

公开(公告)日：2002-03-14

申请号：US09867780

申请日：2001-05-29

Applicant: Applied Materials, Inc.

Inventor： Yezdi Dordi ,  Donald J. Olgado ,  Ratson Morad ,  Peter Hey ,  Mark Denome ,  Michael Sugarman ,  Mark Lloyd ,  Anna Marie Lloyd ,  Joseph Stevens ,  Dan Marohl ,  Ho Seon Shin ,  Eugene Ravinovich ,  Robin Cheung ,  Ashok K. Sinha ,  Avi Tepman ,  Dan Carl ,  George Birkmaier

IPC: C25D017/00 ,  C25D007/12 ,  C25D021/12

CPC classification number: H01L21/6723 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  C25D21/02 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/67126 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/67745 ,  H01L21/68707 ,  H01L21/68721 ,  H01L21/68728 ,  H01L21/68742 ,  H05K3/241

Abstract: The present invention provides an electrochemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electrochemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electrochemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electrochemical deposition process and the components of the electrochemical deposition system.

Abstract translation: 本发明提供一种电化学沉积系统，其被设计成具有可扩展以适应未来设计和间隙填充要求的柔性结构，并且提供令人满意的生产量以满足其它处理系统的需求。 电化学沉积系统通常包括具有主机晶片传送机器人的主机，与主机连接设置的加载站，与主机连接设置的一个或多个处理单元和流体连接到该一个或多个电处理 细胞。 优选地，电化学沉积系统包括设置在加载站和主机之间的旋转干燥（SRD）站，附接到装载站的快速热退火室，以及用于控制电化学沉积过程和组件的系统控制器 的电化学沉积系统。

公开(公告)号：US20020011417A1

公开(公告)日：2002-01-31

申请号：US09941360

申请日：2001-08-28

Applicant: NuTool, Inc.

Inventor： Homayoun Talieh ,  Cyprian Emeka Uzoh

IPC: C25D005/52 ,  C25D007/12 ,  C25D017/00 ,  B23H003/00 ,  C25F007/00 ,  C25F003/00 ,  B05D003/12 ,  C25D011/32

CPC classification number: B24B37/16 ,  C25D5/06 ,  C25D5/22 ,  C25D7/123 ,  C25D17/001 ,  C25D17/14 ,  C25F7/00 ,  H01L21/3212

Abstract: The present invention provides a method and apparatus that plates/deposits a conductive material on a semiconductor substrate and then polishes the same substrate. This is achieved by providing multiple chambers in a single apparatus, where one chamber can be used for plating/depositing the conductive material and another chamber can be used for polishing the semiconductor substrate. The plating/depositing process can be performed using brush plating or electro chemical mechanical deposition and the polishing process can be performed using electropolishing or chemical mechanical polishing. The present invention further provides a method and apparatus for intermittently applying the conductive material to the semiconductor substrate and also intermittently polishing the substrate when such conductive material is not being applied to the substrate. Furthermore, the present invention provides a method and apparatus that plates/deposits and/or polishes a conductive material and improves the electrolyte mass transfer properties on a substrate using a novel anode assembly.

Abstract translation: 本发明提供一种在半导体衬底上沉积/沉积导电材料然后抛光相同衬底的方法和装置。 这通过在单个设备中提供多个室来实现，其中一个室可以用于电镀/沉积导电材料，并且另一个室可以用于抛光半导体衬底。 电镀/沉积工艺可以使用刷镀或电化学机械沉积进行，并且可以使用电抛光或化学机械抛光进行抛光工艺。 本发明还提供了一种用于将导电材料间歇地施加到半导体衬底的方法和装置，并且当这种导电材料未被施加到衬底时也间歇地抛光衬底。 此外，本发明提供了一种使用新型阳极组件对导电材料进行平板/沉积和/或抛光并改善基板上的电解质传质性质的方法和装置。

公开(公告)号：US20010009724A1

公开(公告)日：2001-07-26

申请号：US09771163

申请日：2001-01-29

Inventor： Jimmy Kuo-Wei Chen ,  Benjamin N. Eldridge ,  Thomas H. Dozier ,  Junjye J. Yeh ,  Gayle J. Herman

IPC: B32B015/02 ,  C25D001/08 ,  C25D005/50 ,  C25D007/12 ,  C25D003/02 ,  C25D003/10 ,  C25D003/12 ,  C25D003/20 ,  C25D003/38 ,  C25D003/48

CPC classification number: B23K20/004 ,  B23K2101/40 ,  B81B7/0006 ,  C23C18/1692 ,  C23C18/36 ,  C23C18/50 ,  C25D5/08 ,  C25D5/22 ,  C25D7/123 ,  C25D21/02 ,  G01R1/06761 ,  G01R3/00 ,  H01H1/0036 ,  H01L21/4846 ,  H01L21/4853 ,  H01L21/4889 ,  H01L21/563 ,  H01L22/20 ,  H01L23/49811 ,  H01L24/06 ,  H01L24/45 ,  H01L24/72 ,  H01L24/81 ,  H01L25/0652 ,  H01L25/16 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05599 ,  H01L2224/06136 ,  H01L2224/13144 ,  H01L2224/1357 ,  H01L2224/13655 ,  H01L2224/16145 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/73203 ,  H01L2224/81801 ,  H01L2224/85201 ,  H01L2224/85399 ,  H01L2225/0651 ,  H01L2225/06527 ,  H01L2225/06555 ,  H01L2225/06572 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1532 ,  H01L2924/30107 ,  H05K1/141 ,  H05K3/20 ,  H05K3/326 ,  H05K3/3421 ,  H05K3/368 ,  H05K3/4015 ,  H05K2201/1031 ,  H05K2201/10318 ,  H05K2201/10757 ,  H05K2201/10878 ,  H05K2201/10909 ,  H05K2201/10946 ,  Y02P70/611 ,  Y10T428/12438 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/48

Abstract: Deposition of metal in a preferred shape, including coatings on parts, or stand-alone materials, and subsequent heat treatment to provide improved mechanical properties. In particular, the method gives products with relatively high yield strength. The products often have relatively high elastic modulus, and are thermally stable, maintaining the high yield strength at temperatures considerably above 25null C. This technique involves depositing a material in the presence of a selected additive, and then subjecting the deposited material to a moderate heat treatment. This moderate heat treatment differs from other commonly employed nullstress reliefnull heat treatments in using lower temperatures and/or shorter times, preferably just enough to reorganize the material to the new, desired form. Coating and heat treating a spring-shaped substrate provides a resilient, conductive contact useful for electronic applications.

Abstract translation: 将金属沉积在优选的形状中，包括部件上的涂层或独立材料，以及随后的热处理以提供改进的机械性能。 特别地，该方法给出具有较高屈服强度的产品。 产品通常具有相对较高的弹性模量，并且是热稳定的，在高于25℃的温度下保持高的屈服强度。该技术涉及在选定的添加剂的存在下沉积材料，然后使沉积的材料经受温和 热处理。 这种适度的热处理与使用较低温度和/或更短时间的其它常用的“应力消除”热处理不同，优选刚好足以将材料重组成新的期望形式。 涂层和热处理弹簧形基板提供了一种弹性导电触点，可用于电子应用。

公开(公告)号：US20040173454A1

公开(公告)日：2004-09-09

申请号：US09981191

申请日：2001-10-16

Applicant: Applied Materials, Inc.

Inventor： Donald J.K. Olgado ,  Michael Wood ,  Dmitry Lubomirsky

IPC: C25D007/12 ,  C25D005/02

CPC classification number: C25D7/123 ,  C25D5/028 ,  C25D17/001 ,  C25D17/06 ,  H01L21/2885

Abstract: An apparatus and method for securing and electrically contacting a substrate on a non-production surface of the substrate. The apparatus includes a substrate holder assembly having a substrate engaging surface formed thereon, the substrate engaging surface being configured to engage a substrate on the non-production surface. The apparatus further includes an electrical contact device positioned on the substrate engaging surface, the electrical contact device including a plurality of radially spaced electrically conductive members configured to electrically communicate with the non-production surface of the substrate positioned on the substrate engaging surface. The method includes depositing a conductive seed layer on a production surface of the substrate, and depositing a backside conductive layer on a portion of the non-production side of the substrate, the backside conductive layer extending around a bevel of the substrate to electrically communicate with the seed layer. The method further includes securing the substrate in a chuck configured to engage the non-production surface of the substrate, contacting the backside conductive layer with an electrical cathode contact on the non-production side of the substrate, and plating over the conductive seed layer via application of an electrolyte to the production surface of the substrate and applying an electrical bias to the electrical cathode contact and an anode in communication with the electrolyte.

Abstract translation: 一种用于固定和电接触衬底的非生产表面上的衬底的装置和方法。 该设备包括具有形成在其上的衬底接合表面的衬底保持器组件，衬底接合表面被配置为接合非生产表面上的衬底。 所述装置还包括位于所述基板接合表面上的电接触装置，所述电接触装置包括多个径向隔开的导电构件，所述导电构件构造成与位于所述基板接合表面上的所述基板的非生产表面电连通。 该方法包括在衬底的生产表面上沉积导电种子层，以及在衬底的非生产侧的一部分上沉积背面导电层，所述背面导电层围绕衬底的斜面延伸以与 种子层。 该方法还包括将衬底固定在配置成接合衬底的非生产表面的卡盘中，使背面导电层与衬底的非生产侧上的电阴极接触接触，并且在导电种子层上电镀 将电解质施加到基材的生产表面上，并将电偏压施加到电阴极接触件和与电解质连通的阳极。

公开(公告)号：US20040055894A1

公开(公告)日：2004-03-25

申请号：US10669002

申请日：2003-09-24

Applicant: CANON KABUSHIKI KAISHA

Inventor： Yukiko Iwasaki ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Noritaka Ukiyo

IPC: C25D007/12

CPC classification number: H01L21/02032 ,  C25D11/32 ,  C25D17/10 ,  H01L21/0203 ,  H01L21/76259 ,  H01L29/0657 ,  H01L2221/6835 ,  H01L2221/68359 ,  H01L2221/68363

Abstract: In a process for producing a semiconductor member, and a solar cell, making use of a thin-film crystal semiconductor layer, the process comprises the steps of: (1) anodizing the surface of a first substrate to form a porous layer at least on one side of the substrate, (2) forming a semiconductor layer at least on the-surface of the porous layer, (3) removing the semiconductor layer at its peripheral region, (4) bonding a second substrate to the surface of the semiconductor layer, (5) separating the semiconductor layer from the first substrate at the part of the porous layer, and (6) treating the surface of the first substrate after separation and repeating the above steps (1) to (5). This process enables separation of the thin-film semiconductor layer at a small force while causing less cracks, breaks or defects to be brought into it and can manufacture high-performance semiconductor members and solar cells in a good efficiency.

Abstract translation: 在利用薄膜晶体半导体层制造半导体部件和太阳能电池的方法中，该方法包括以下步骤：（1）阳极氧化第一基板的表面，至少形成多孔层 （2）至少在多孔层的表面上形成半导体层，（3）在其周边区域去除半导体层，（4）将第二基板接合到半导体层的表面 （5）在多孔层的一部分分离半导体层与第一基板，（6）分离后处理第一基板的表面，并重复上述步骤（1）至（5）。 该方法能够以小的力分离薄膜半导体层，同时引起较少的裂纹，断裂或缺陷，并且可以以高效率制造高性能半导体部件和太阳能电池。