公开(公告)号：US5714006A

公开(公告)日：1998-02-03

申请号：US572883

申请日：1995-12-18

申请人： Hirotaka Kizuki ,  Yasutomo Kajikawa

发明人： Hirotaka Kizuki ,  Yasutomo Kajikawa

IPC分类号： C30B29/38 ,  C30B29/48 ,  H01L21/20 ,  H01L21/203 ,  H01L21/205 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  C30B25/09

CPC分类号： H01L33/007 ,  H01L21/02411 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  Y10S117/901

摘要： A method of growing a compound semiconductor layer includes epitaxially growing a III-V compound semiconductor layer including nitrogen (N) for as the Group V element on a front surface of a semiconductor substrate of cadmium telluride (CdTe). Therefore, the atoms of the crystal lattice of the III-V compound semiconductor layer are periodically lattice-matched with the atoms of the crystal lattice of the CdTe semiconductor substrate, whereby the III-V compound semiconductor layer is epitaxially grown with high crystalline quality.

摘要翻译： 生长化合物半导体层的方法包括在碲化镉（CdTe）的半导体衬底的前表面上外延生长包含作为V族元素的氮（N）的III-V族化合物半导体层。 因此，III-V族化合物半导体层的晶格的原子与CdTe半导体衬底的晶格的原子周期性地晶格匹配，由此III-V族化合物半导体层以高结晶质量外延生长。