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公开(公告)号:US11329182B2
公开(公告)日:2022-05-10
申请号:US17209905
申请日:2021-03-23
发明人: Matthias Meusel , Gerhard Strobl , Frank Dimroth , Andreas Bett
IPC分类号: H01L31/0725 , H01L31/0216 , H01L31/0304 , H01L31/0687 , H01L31/056 , H01L31/052 , H01L31/047 , H01L31/054 , H01L31/0232 , H01L31/0735 , H01L31/074
摘要: A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.
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公开(公告)号:US11127873B2
公开(公告)日:2021-09-21
申请号:US17034669
申请日:2020-09-28
发明人: Matthias Meusel
IPC分类号: H01L31/0687 , H01L31/0725 , H01L31/0216 , H01L31/054 , H01L31/0304
摘要: A monolithic multijunction solar cell having exactly four subcells, an uppermost first subcell having a layer made up of a component having the elements AlInP, and the lattice constant a1 of the layer being between 0.572 nm and 0.577 nm, and the indium content being between 64% and 75%, and the Al content being between 18% and 32%, and the third subcell having a layer made up of a compound having at least the elements GaInAs, and the lattice constant of the layer being between 0.572 and 0.577, and the indium content of the layer being greater than 17%, and the second subcell comprising a layer including a compound which has at least the elements GaInAsP, the layer having an arsenic content between 22% and 33% and an indium content between 52% and 65%. and the lattice constant a2 being between 0.572 and 0.577.
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公开(公告)号:US09741888B2
公开(公告)日:2017-08-22
申请号:US14988311
申请日:2016-01-05
发明人: Matthias Meusel , Gerhard Strobl , Frank Dimroth , Andreas Bett
IPC分类号: H01L31/056 , H01L31/0687 , H01L31/0725 , H01L31/0216 , H01L31/0304 , H01L31/052 , H01L31/047 , H01L31/054 , H01L31/0232 , H01L31/0735 , H01L31/074
CPC分类号: H01L31/0725 , H01L31/02168 , H01L31/02327 , H01L31/03046 , H01L31/047 , H01L31/052 , H01L31/0547 , H01L31/056 , H01L31/0687 , H01L31/0735 , H01L31/074 , Y02E10/52 , Y02E10/544
摘要: A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.
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公开(公告)号:US09252313B2
公开(公告)日:2016-02-02
申请号:US14203669
申请日:2014-03-11
发明人: Matthias Meusel , Gerhard Strobl , Frank Dimroth , Andreas Bett
IPC分类号: H01L31/056 , H01L31/0687 , H01L31/052 , H01L31/0216 , H01L31/0304
CPC分类号: H01L31/0725 , H01L31/02168 , H01L31/02327 , H01L31/03046 , H01L31/047 , H01L31/052 , H01L31/0547 , H01L31/056 , H01L31/0687 , H01L31/0735 , H01L31/074 , Y02E10/52 , Y02E10/544
摘要: A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.
摘要翻译: 单片多重太阳能电池包括至少三个部分电池,半导体镜放置在两个部分电池之间。 本发明的目的是提高所述太阳能电池的辐射稳定性。 为此目的,半导体镜在部分单元的光谱吸收区域的至少一部分中具有高度反射,该区域单元布置在半导体反射镜上方,并且在部分单元的光谱吸收范围内的高透射率被布置 半导体镜下方。
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公开(公告)号:US11588067B2
公开(公告)日:2023-02-21
申请号:US17373228
申请日:2021-07-12
发明人: Matthias Meusel , Alexander Berg , Philipp Schroth
IPC分类号: H01L31/0725 , H01L31/054 , H01L31/074
摘要: A monolithic multi-junction solar cell comprising a first III-V subcell and a second III-V subcell and a third III-V subcell and a fourth Ge subcell, wherein the subcells are stacked on top of one another in the specified order, and the first subcell forms the top subcell and a metamorphic buffer is formed between the third subcell and the fourth subcell and all subcells each have an n-doped emitter layer and a p-doped base layer and the emitter doping in the second subcell is lower than the base doping.
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公开(公告)号:US11374140B2
公开(公告)日:2022-06-28
申请号:US17373254
申请日:2021-07-12
IPC分类号: H01L31/0725 , H01L31/0735
摘要: A monolithic metamorphic multi-junction solar cell comprising a first III-V subcell and a second III-V subcell and a third III-V subcell and a fourth Ge subcell, wherein the subcells are stacked on top of each other in the indicated order, and the first subcell forms the topmost subcell, and a metamorphic buffer is formed between the third subcell and the fourth subcell and all subcells each have an n-doped emitter layer and a p-doped base layer, and the emitter layer of the second subcell is greater than the base layer.
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公开(公告)号:US09799789B2
公开(公告)日:2017-10-24
申请号:US14988250
申请日:2016-01-05
发明人: Matthias Meusel , Gerhard Strobl , Frank Dimroth , Andreas Bett
IPC分类号: H01L31/056 , H01L31/0687 , H01L31/0725 , H01L31/0216 , H01L31/0304 , H01L31/052 , H01L31/047 , H01L31/054 , H01L31/0232 , H01L31/0735 , H01L31/074
CPC分类号: H01L31/0725 , H01L31/02168 , H01L31/02327 , H01L31/03046 , H01L31/047 , H01L31/052 , H01L31/0547 , H01L31/056 , H01L31/0687 , H01L31/0735 , H01L31/074 , Y02E10/52 , Y02E10/544
摘要: A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.
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公开(公告)号:US20160211401A1
公开(公告)日:2016-07-21
申请号:US14988311
申请日:2016-01-05
发明人: Matthias Meusel , Gerhard Strobl , Frank Dimroth , Andreas Bett
IPC分类号: H01L31/0725 , H01L31/0735 , H01L31/0232 , H01L31/074
CPC分类号: H01L31/0725 , H01L31/02168 , H01L31/02327 , H01L31/03046 , H01L31/047 , H01L31/052 , H01L31/0547 , H01L31/056 , H01L31/0687 , H01L31/0735 , H01L31/074 , Y02E10/52 , Y02E10/544
摘要: A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.
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公开(公告)号:US11728453B2
公开(公告)日:2023-08-15
申请号:US17373199
申请日:2021-07-12
IPC分类号: H01L31/0725 , H01L31/043 , H01L31/0735 , H01L31/074
CPC分类号: H01L31/0725 , H01L31/043 , H01L31/074 , H01L31/0735
摘要: A stacked monolithic multijunction solar cell, which includes a first subcell having a p-n junction with an emitter layer and a base layer, the thickness of the emitter layer being less than the thickness of the base layer at least by a factor of ten, and the first subcell comprising a substrate having a semiconductor material from the groups III and V or a substrate from the group IV, and which further includes a second subcell arranged on the first subcell and a third subcell arranged on the second subcell, the two subcells each including an emitter layer and a base layer, and a tunnel diode and a back side field layer each being formed between the subcells, the thickness of the emitter layer being greater than the thickness of the base layer in each case between the second subcell and in the third subcell.
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公开(公告)号:US10833215B2
公开(公告)日:2020-11-10
申请号:US15263818
申请日:2016-09-13
发明人: Wolfgang Guter , Matthias Meusel , Frank Dimroth , Lars Ebel , Rene Kellenbenz
IPC分类号: H01L31/0687 , H01L21/18 , H01L31/054 , H01L31/028 , H01L31/0304
摘要: A multi-junction solar cell having a first subcell made of an InGaAs compound. The first subcell has a first lattice constant and A second subcell has a second lattice constant. The first lattice constant is at least 0.008 Å greater than the second lattice constant. A metamorphic buffer is formed between the first subcell and the second subcell and has a sequence of at least three layers and a lattice constant increases from layer to layer in the sequence in the direction toward the first subcell. The lattice constants of the layers of the buffer are greater than the second lattice constant, and a layer of the metamorphic buffer has a third lattice constant that is greater than the first lattice constant. A number N of compensation layers for compensating the residual stress of the metamorphic buffer is formed between the metamorphic buffer and the first subcell.
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