Monolithic multijunction solar cell having exactly four subcells

    公开(公告)号:US11127873B2

    公开(公告)日:2021-09-21

    申请号:US17034669

    申请日:2020-09-28

    发明人: Matthias Meusel

    摘要: A monolithic multijunction solar cell having exactly four subcells, an uppermost first subcell having a layer made up of a component having the elements AlInP, and the lattice constant a1 of the layer being between 0.572 nm and 0.577 nm, and the indium content being between 64% and 75%, and the Al content being between 18% and 32%, and the third subcell having a layer made up of a compound having at least the elements GaInAs, and the lattice constant of the layer being between 0.572 and 0.577, and the indium content of the layer being greater than 17%, and the second subcell comprising a layer including a compound which has at least the elements GaInAsP, the layer having an arsenic content between 22% and 33% and an indium content between 52% and 65%. and the lattice constant a2 being between 0.572 and 0.577.

    Monolithic metamorphic multi-junction solar cell

    公开(公告)号:US11588067B2

    公开(公告)日:2023-02-21

    申请号:US17373228

    申请日:2021-07-12

    摘要: A monolithic multi-junction solar cell comprising a first III-V subcell and a second III-V subcell and a third III-V subcell and a fourth Ge subcell, wherein the subcells are stacked on top of one another in the specified order, and the first subcell forms the top subcell and a metamorphic buffer is formed between the third subcell and the fourth subcell and all subcells each have an n-doped emitter layer and a p-doped base layer and the emitter doping in the second subcell is lower than the base doping.

    Monolithic metamorphic multi-junction solar cell

    公开(公告)号:US11374140B2

    公开(公告)日:2022-06-28

    申请号:US17373254

    申请日:2021-07-12

    IPC分类号: H01L31/0725 H01L31/0735

    摘要: A monolithic metamorphic multi-junction solar cell comprising a first III-V subcell and a second III-V subcell and a third III-V subcell and a fourth Ge subcell, wherein the subcells are stacked on top of each other in the indicated order, and the first subcell forms the topmost subcell, and a metamorphic buffer is formed between the third subcell and the fourth subcell and all subcells each have an n-doped emitter layer and a p-doped base layer, and the emitter layer of the second subcell is greater than the base layer.

    Stacked monolithic multijunction solar cell

    公开(公告)号:US11728453B2

    公开(公告)日:2023-08-15

    申请号:US17373199

    申请日:2021-07-12

    摘要: A stacked monolithic multijunction solar cell, which includes a first subcell having a p-n junction with an emitter layer and a base layer, the thickness of the emitter layer being less than the thickness of the base layer at least by a factor of ten, and the first subcell comprising a substrate having a semiconductor material from the groups III and V or a substrate from the group IV, and which further includes a second subcell arranged on the first subcell and a third subcell arranged on the second subcell, the two subcells each including an emitter layer and a base layer, and a tunnel diode and a back side field layer each being formed between the subcells, the thickness of the emitter layer being greater than the thickness of the base layer in each case between the second subcell and in the third subcell.

    Multi solar cell
    10.
    发明授权

    公开(公告)号:US10833215B2

    公开(公告)日:2020-11-10

    申请号:US15263818

    申请日:2016-09-13

    摘要: A multi-junction solar cell having a first subcell made of an InGaAs compound. The first subcell has a first lattice constant and A second subcell has a second lattice constant. The first lattice constant is at least 0.008 Å greater than the second lattice constant. A metamorphic buffer is formed between the first subcell and the second subcell and has a sequence of at least three layers and a lattice constant increases from layer to layer in the sequence in the direction toward the first subcell. The lattice constants of the layers of the buffer are greater than the second lattice constant, and a layer of the metamorphic buffer has a third lattice constant that is greater than the first lattice constant. A number N of compensation layers for compensating the residual stress of the metamorphic buffer is formed between the metamorphic buffer and the first subcell.