公开(公告)号：US5721021A

公开(公告)日：1998-02-24

申请号：US720867

申请日：1996-10-03

申请人： Ryoki Tobe ,  Masao Sasaki ,  Atsushi Sekiguchi ,  Ken-ichi Takagi

发明人： Ryoki Tobe ,  Masao Sasaki ,  Atsushi Sekiguchi ,  Ken-ichi Takagi

IPC分类号： C01G23/00 ,  C23C16/08 ,  C23C16/14 ,  C23C16/34 ,  C23C16/50 ,  C23C16/509 ,  C30B29/02 ,  C30B29/10 ,  C30B29/38 ,  H01J37/32 ,  H01L21/28 ,  H01L21/285 ,  H05H1/46 ,  H05H1/73 ,  C23C16/06

CPC分类号： H01J37/32174 ,  C23C16/08 ,  C23C16/34 ,  C23C16/509 ,  H01J37/32082 ,  H05H1/46

摘要： A method of depositing a titanium-containing conductive thin film, which is capable of depositing a high-quality thin film having a low chlorine content by grounding, through a capacitor, a terminal of a plasma generating electrode disposed in a processing chamber. In the method, one of the introduction terminals of the plasma generating electrode is connected to a radio-frequency power source, the other terminal being grounded through the capacitor. Titanium tetrachloride, hydrogen gas, and nitrogen gas are introduced into the processing chamber at flowrates of 20 ml/min, 30 ml/min and 10 ml/min, respectively. The pressure in the processing chamber is set to about 1 Pa, and the temperature of the substrate is set to 450.degree. to 600.degree. C. A low-pressure, high-density plasma is generated with an output of the radio-frequency power source of 2.5 kW to deposit a titanium nitride film at a rate of about 30 nm/min. The resultant titanium nitride film has a chlorine content of 1% or less, metallic lustre and low resistance.

摘要翻译： 通过电容器将布置在处理室中的等离子体生成电极的端子通过电容器沉积能够沉积具有低氯含量的高质量薄膜的方法。 在该方法中，等离子体产生电极的引入端子之一连接到射频电源，另一端子通过电容器接地。 四氯化钛，氢气和氮气分别以20ml / min，30ml / min和10ml / min的流速引入处理室。 处理室中的压力设定为约1Pa，将基板的温度设定为450〜600℃。利用射频电源的输出产生低压，高密度等离子体 2.5kW，以约30nm / min的速率沉积氮化钛膜。 所得到的氮化钛膜的氯含量为1％以下，金属光泽和低电阻。