公开(公告)号：US5891349A

公开(公告)日：1999-04-06

申请号：US720868

申请日：1996-10-03

申请人： Ryoki Tobe ,  Masao Sasaki ,  Atsushi Sekiguchi ,  Ken-ichi Takagi

发明人： Ryoki Tobe ,  Masao Sasaki ,  Atsushi Sekiguchi ,  Ken-ichi Takagi

IPC分类号： C23C16/50 ,  C23C16/509 ,  C23F4/00 ,  H01J37/32 ,  H01L21/285 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/46 ,  H05H1/00

CPC分类号： H01J37/321 ,  C23C16/509 ,  H05H1/46

摘要： A plasma enhanced CVD apparatus includes a processing chamber, a pumping system for evacuating the processing chamber, a gas inlet system for introducing a source gas, and a plasma generating electrode provided in the processing chamber for depositing a film on a substrate in the processing chamber by plasma generated by electrical power supplied to the plasma generating electrode; the plasma generating electrode has two terminals, one of the terminals is connected to a radio frequency power source and other of the terminals is grounded through an electrode potential controlling system; and the processing chamber is grounded through an inner wall potential controlling system. The present invention is further directed to a plasma enhanced CVD process, a dry etching apparatus, and a dry etch process.

摘要翻译： 等离子体增强CVD装置包括处理室，用于抽空处理室的泵送系统，用于引入源气体的气体入口系统和设置在处理室中的等离子体产生电极，用于在处理室中的基板上沉积膜 通过供给到等离子体发生电极的电力产生的等离子体; 等离子体产生电极具有两个端子，其中一个端子连接到射频电源，而其它端子通过电极电位控制系统接地; 并且处理室通过内壁电位控制系统接地。 本发明进一步涉及等离子体增强CVD工艺，干蚀刻装置和干蚀刻工艺。

公开(公告)号：US5721021A

公开(公告)日：1998-02-24

申请号：US720867

申请日：1996-10-03

申请人： Ryoki Tobe ,  Masao Sasaki ,  Atsushi Sekiguchi ,  Ken-ichi Takagi

发明人： Ryoki Tobe ,  Masao Sasaki ,  Atsushi Sekiguchi ,  Ken-ichi Takagi

IPC分类号： C01G23/00 ,  C23C16/08 ,  C23C16/14 ,  C23C16/34 ,  C23C16/50 ,  C23C16/509 ,  C30B29/02 ,  C30B29/10 ,  C30B29/38 ,  H01J37/32 ,  H01L21/28 ,  H01L21/285 ,  H05H1/46 ,  H05H1/73 ,  C23C16/06

CPC分类号： H01J37/32174 ,  C23C16/08 ,  C23C16/34 ,  C23C16/509 ,  H01J37/32082 ,  H05H1/46

摘要： A method of depositing a titanium-containing conductive thin film, which is capable of depositing a high-quality thin film having a low chlorine content by grounding, through a capacitor, a terminal of a plasma generating electrode disposed in a processing chamber. In the method, one of the introduction terminals of the plasma generating electrode is connected to a radio-frequency power source, the other terminal being grounded through the capacitor. Titanium tetrachloride, hydrogen gas, and nitrogen gas are introduced into the processing chamber at flowrates of 20 ml/min, 30 ml/min and 10 ml/min, respectively. The pressure in the processing chamber is set to about 1 Pa, and the temperature of the substrate is set to 450.degree. to 600.degree. C. A low-pressure, high-density plasma is generated with an output of the radio-frequency power source of 2.5 kW to deposit a titanium nitride film at a rate of about 30 nm/min. The resultant titanium nitride film has a chlorine content of 1% or less, metallic lustre and low resistance.

摘要翻译： 通过电容器将布置在处理室中的等离子体生成电极的端子通过电容器沉积能够沉积具有低氯含量的高质量薄膜的方法。 在该方法中，等离子体产生电极的引入端子之一连接到射频电源，另一端子通过电容器接地。 四氯化钛，氢气和氮气分别以20ml / min，30ml / min和10ml / min的流速引入处理室。 处理室中的压力设定为约1Pa，将基板的温度设定为450〜600℃。利用射频电源的输出产生低压，高密度等离子体 2.5kW，以约30nm / min的速率沉积氮化钛膜。 所得到的氮化钛膜的氯含量为1％以下，金属光泽和低电阻。

公开(公告)号：US5855685A

公开(公告)日：1999-01-05

申请号：US720866

申请日：1996-10-03

申请人： Ryoki Tobe ,  Atsushi Sekiguchi ,  Masao Sasaki

发明人： Ryoki Tobe ,  Atsushi Sekiguchi ,  Masao Sasaki

IPC分类号： H05H1/46 ,  C23C16/50 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/31 ,  H05H1/00

CPC分类号： H01J37/321

摘要： By forming at least one annular groove in each of electrical insulation members provided between a plasma generating electrode and a processing chamber, the insulation performance of the electrical insulation members are prevented from degradation during deposition of conductive films onto a substrate. The plasma generating electrode is substantially a coil of one turn and provided with a pair of introduction portions passing through a wall of the processing chamber. An insulation ring made of quartz glass is installed between each of the introduction portion and the processing chamber. The insulation ring has a round through hole in the center of a disc and three concentric protrusions, each of which is in the shape of an annulus ring, are formed at one side of the disc (the side exposed in the processing chamber). Two annular grooves are made between the protrusions. Each of the protrusions are 50 mm high, 1 mm thick, and 1 mm wide.

摘要翻译： 通过在设置在等离子体产生电极和处理室之间的每个电绝缘构件中形成至少一个环形槽，可以防止在将导电膜沉积到衬底上时电绝缘构件的绝缘性能降低。 等离子体产生电极基本上是一圈的线圈，并且设置有穿过处理室的壁的一对引入部分。 由石英玻璃制成的绝缘环安装在导入部和处理室之间。 绝缘环在盘的中心具有圆形通孔，并且在盘的一侧（暴露在处理室中的一侧）上形成有三个同心的突起（每个都是环形环形）。 在突起之间形成两个环形槽。 每个突起都是50毫米高，1毫米厚和1毫米宽。

公开(公告)号：US6080446A

公开(公告)日：2000-06-27

申请号：US63274

申请日：1998-04-21

申请人： Ryoki Tobe ,  Yasuaki Tanaka ,  Atsushi Sekiguchi ,  Hitoshi Jimba ,  So Won Kim

发明人： Ryoki Tobe ,  Yasuaki Tanaka ,  Atsushi Sekiguchi ,  Hitoshi Jimba ,  So Won Kim

IPC分类号： C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/34 ,  C23C16/45502 ,  C23C16/45561 ,  C23C16/45576 ,  H01L21/28568

摘要： A method for fabricating a titanium nitride thin film in a reaction vessel on a surface of a substrate heated to a prescribed temperature, includes the steps of mixing tetrakis(dialkylamino)titanium (TDAAT) and a first carrier gas to create a first mixed gas; feeding the first mixed gas into the reaction vessel through a first set of nozzles; mixing an added gas reactive with the tetrakis(dialkylamino)titanium with a second carrier gas to create a second mixed gas; feeding the second mixed gas into the reaction vessel through a second set of nozzles; while controlling the flow rates of the TDAAT, added gas, firt and second carrier gases; and depositing a titanium nitride thin film by the first mixed gas and the second mixed gas while confining the pressure inside the reaction vessel to a range of 0.1-15 Pa.

摘要翻译： 在加热到规定温度的基板的表面上的反应容器中制造氮化钛薄膜的方法，包括将四（二烷基氨基）钛（TDAAT）和第一载气混合以产生第一混合气体的步骤; 通过第一组喷嘴将第一混合气体进料到反应容器中; 将与四（二烷基氨基）钛反应的添加气体与第二载气混合以产生第二混合气体; 通过第二组喷嘴将第二混合气体进料到反应容器中; 同时控制TDAAT，添加气体，细丝和第二载气的流速; 以及通过第一混合气体和第二混合气体沉积氮化钛薄膜，同时将反应容器内的压力限制在0.1-15Pa的范围内。

公开(公告)号：US06468604B1

公开(公告)日：2002-10-22

申请号：US09453889

申请日：2000-03-03

申请人： Ryoki Tobe ,  Hiroshi Doi ,  Atsushi Sekiguchi

发明人： Ryoki Tobe ,  Hiroshi Doi ,  Atsushi Sekiguchi

IPC分类号： C23C800

CPC分类号： C23C16/34

摘要： A method of manufacturing a titanium nitride thin film at the surface of a substrate the chemical vapor deposition method (CVD method) includes supplying trakisdialkylamino titanium (TDAAT and ammonia into a reaction vessel, and heating it a prescribed temperature under a low pressure of less than 100 Pa total pressure, wherein the partial pressure PTDAAT of the source-material gas is set in a range of 0

摘要翻译： 一种在基板表面制造氮化钛薄膜的方法，化学气相沉积方法（CVD方法）包括向反应容器中提供中间二烷基氨基钛（TDAAT和氨），并将其在低于 100Pa的总压，其中源材料气体的分压PTDAAT相对于加入的氨气的分压PNH3设定在0

公开(公告)号：US06471781B1

公开(公告)日：2002-10-29

申请号：US09343702

申请日：1999-06-30

申请人： Ryoki Tobe ,  Yasuaki Tanaka ,  Atsushi Sekiguchi ,  Hitoshi Jimba ,  So Won Kim

发明人： Ryoki Tobe ,  Yasuaki Tanaka ,  Atsushi Sekiguchi ,  Hitoshi Jimba ,  So Won Kim

IPC分类号： C23C1600

CPC分类号： C23C16/45565 ,  C23C16/34 ,  C23C16/45502 ,  C23C16/45561 ,  C23C16/45576 ,  H01L21/28568

摘要： A CVD apparatus for fabricating a titanium nitride thin film is provided. The apparatus comprises an evacuatable reaction vessel having an interior, a pumping apparatus capable of exhausting the reaction vessel and maintaining the interior of the reaction vessel at a prescribed pressure, a gas feeder for introducing a mixed gas into the reaction vessel, a substrate holder in the reaction vessel for holding a substrate to be coated with a titanium nitride thin film, and a heater for heating the substrate. The gas feeder is equipped with the following components: (a) a vaporizer for vaporizing tetrakis(dialkylamino)titanium (TDAAT) from a liquid source material, (b) a first flow controller capable of setting a flow rate of the vaporized TDAAT to any level within a range of 0.004-02 g/min, (c) a second flow controller capable of setting a flow rate of a first carrier gas mixed with the TDAAT to any level within a range of 100-1000 sccm, (d) a third flow controller capable of setting a flow rate of an added gas reactable with the TDAAT to any level within a range of 10-100 sccm, (e) a fourth flow controller capable of setting a flow rate of a second carrier gas being mixed with the added gas to any level within a range of 10-500 sccm, (f) a first supply conduit for mixing the TDAAT and the first carrier gas to create a first mixed gas and guiding the resulting first mixed gas into the reaction vessel, (g) a second supply conduit for mixing the added gas and the second carrier gas to create a second mixed gas and guiding the resulting second mixed gas into the reaction vessel, and (h) a shower head which is provided with a plurality of first nozzles connected to the first supply conduit, and a plurality of second nozzles connected to the second supply conduit, and which is configured such that the first and second mixed gases are fed into the reaction vessel through the nozzles.

公开(公告)号：US20070115521A1

公开(公告)日：2007-05-24

申请号：US11622868

申请日：2007-01-12

申请人： Kenji UEDA ,  Tsuyoshi Hotta ,  Yukio Taniguchi ,  Atsushi Sekiguchi ,  Hideyuki Iriyama

发明人： Kenji UEDA ,  Tsuyoshi Hotta ,  Yukio Taniguchi ,  Atsushi Sekiguchi ,  Hideyuki Iriyama

IPC分类号： G03H1/02

CPC分类号： G03H1/26 ,  G02B5/32 ,  G03H1/0236 ,  G03H1/18 ,  G03H1/24 ,  G03H2001/0439 ,  G03H2001/186 ,  G03H2001/2263 ,  G03H2001/2271 ,  G03H2001/263 ,  G03H2001/266 ,  G03H2001/303 ,  G03H2222/16 ,  G03H2223/18 ,  G03H2230/10 ,  G03H2250/34 ,  G03H2250/44 ,  G03H2260/12 ,  G03H2270/23

摘要： The hologram recording sheet according to the invention is made up of a base film and hologram sensitive materials sensitive to different wavelength regions formed therein in a desired pattern, or a film and at least two hologram recording sensitive materials sensitive to different wavelength regions laminated on the film with a transparent plastic spacer layer located therebetween, thereby enabling the required diffraction light wavelengths to be recorded on the required sites without producing unnecessary interference fringes. At least two hologram recording sensitive materials sensitive to different wavelength regions are formed on different sites on a film in dotted or striped configuration, the size of which is up to 200 mm or at least twice as large as the thickness of the sensitive material layers, thereby enabling regions diffracting light of different wavelengths to be formed in the form of independent sets of interference fringes.

公开(公告)号：US06340540B1

公开(公告)日：2002-01-22

申请号：US09606311

申请日：2000-06-29

申请人： Kenji Ueda ,  Tsuyoshi Hotta ,  Yukio Taniguchi ,  Atsushi Sekiguchi ,  Hideyuki Iriyama

发明人： Kenji Ueda ,  Tsuyoshi Hotta ,  Yukio Taniguchi ,  Atsushi Sekiguchi ,  Hideyuki Iriyama

IPC分类号： G03H104

CPC分类号： G03H1/26 ,  G02B5/32 ,  G03H1/0236 ,  G03H1/18 ,  G03H1/24 ,  G03H2001/0439 ,  G03H2001/186 ,  G03H2001/2263 ,  G03H2001/2271 ,  G03H2001/263 ,  G03H2001/266 ,  G03H2001/303 ,  G03H2222/16 ,  G03H2223/18 ,  G03H2230/10 ,  G03H2250/34 ,  G03H2250/44 ,  G03H2260/12 ,  G03H2270/23

摘要： The hologram recording sheet according to the invention is made up of a base film and hologram sensitive materials sensitive to different wavelength regions formed therein in a desired pattern, or a film and at least two hologram recording sensitive materials sensitive to different wavelength regions laminated on the film with a transparent plastic spacer layer located therebetween, thereby enabling the required diffraction light wavelengths to be recorded on the required sites without producing unnecessary interference fringes. At least two hologram recording sensitive materials sensitive to different wavelength regions are formed on different sites on a film in dotted or striped configuration, the size of which is up to 200 mm or at least twice as large as the thickness of the sensitive material layers, thereby enabling regions diffracting light of different wavelengths to be formed in the form of independent sets of interference fringes.

摘要翻译： 根据本发明的全息记录片材由基片和全息图敏感材料构成，所述基片和全息图敏感材料以所需图案形成在其中形成的不同波长区域，或薄膜和至少两个对不同波长区域敏感的全息图记录敏感材料， 薄膜具有位于其间的透明塑料间隔层，从而使所需的衍射光波长能够记录在所需位置上，而不产生不必要的干涉条纹。 至少两个对不同波长区域敏感的全息图记录敏感材料形成在薄膜上的不同位置上，点状或条纹形状，其尺寸高达200mm或至少是敏感材料层厚度的两倍， 从而能够以不同的干涉条纹的形式形成衍射不同波长的光的区域。

公开(公告)号：US5672385A

公开(公告)日：1997-09-30

申请号：US611678

申请日：1996-03-06

申请人： Hitoshi Jimba ,  So Won Kim ,  Atsushi Sekiguchi

发明人： Hitoshi Jimba ,  So Won Kim ,  Atsushi Sekiguchi

IPC分类号： C01B21/076 ,  C23C16/34 ,  C30B29/28 ,  H01L21/285 ,  H01L21/31 ,  H01L21/318 ,  C23C16/18

CPC分类号： C23C16/34

摘要： The present invention provides a method of depositing a titanium nitride thin film with good coverage even in a hole with a high aspect ratio by using tetrakisdialkylaminotitanium. In this method, a raw material gas of tetrakisdialkylaminotitanium is introduced into a reactor through a raw material gas introduction system. When the raw material gas is supplied to a substrate which is previously heated by a holder temperature control mechanism, predetermined thermally chemical reaction takes place to deposit a thin film consisting of titanium nitride as a main component. The pressure in the reactor is controlled by an exhaust system so as to be maintained at a predetermined value in the range of about 0.1 to 15 Pa.

摘要翻译： 本发明提供一种通过使用四烷基氨基钛，即使在具有高纵横比的孔中沉积具有良好覆盖率的氮化钛薄膜的方法。 在该方法中，通过原料气体导入系统将四烷基氨基钛的原料气体引入反应器。 当原料气体被供给到由保持器温度控制机构预先加热的基板时，发生预定的热化学反应以沉积由氮化钛组成的薄膜作为主要成分。 反应器中的压力由排气系统控制，以便保持在约0.1至15Pa的范围内的预定值。

公开(公告)号：US5660954A

公开(公告)日：1997-08-26

申请号：US370179

申请日：1995-01-09

申请人： Kazuhiro Suga ,  Atsushi Sekiguchi ,  Kenji Ueda ,  Hiroyuki Nishimura

发明人： Kazuhiro Suga ,  Atsushi Sekiguchi ,  Kenji Ueda ,  Hiroyuki Nishimura

IPC分类号： G03H1/02 ,  G03H1/18 ,  G03H1/20 ,  G03H1/04 ,  G03H1/00

CPC分类号： G03H1/202 ,  G03H1/0256 ,  G03H1/18 ,  G03H1/0248 ,  G03H1/0252 ,  G03H2223/25 ,  G03H2227/04 ,  G03H2240/55 ,  G03H2250/10 ,  G03H2250/12 ,  G03H2250/32

摘要： A duplicating photosensitive material film is brought into close contact with an ND glass reduced in thickness so as to become flexible or a flexible sheet or an ND glass coated with a cushioning layer through an optical contacting liquid containing a surface active agent. In addition, a spacer is interposed between a hologram original plate and a duplicating photosensitive material, and a space defined by the spacer is filled with an optical contacting liquid, thereby regulating the thickness of the optical contacting liquid layer with the spacer. Therefore, when pressure is applied, the optical contacting liquid is uniformly pressed, so that it can be made uniform and thin in thickness. Accordingly, it is possible to prevent a failure of duplication of a hologram image due to undesirable flow of the optical contacting liquid. In addition, the wettability of the optical contacting liquid improves, so that it is possible to prevent trapping of air and foaming and to make the optical contacting liquid uniform and thin in thickness. Thus, it becomes possible to duplicate a hologram image excellently. In addition, a cushioning layer is provided on the inner side of an AR coated ND glass or on the upper side of a photosensitive material film, and another cushioning layer is provided on the side of an original plate protecting glass which is closer to the optical contacting liquid or on the lower side of the photosensitive material film. With this arrangement, even if dust enters, it can be effectively held inside the cushioning layers. Thus, it is possible to prevent undesirable flow of the optical contacting liquid and lifting of the film due to dust and hence possible to perform duplication effectively without any hindrance. Also disclosed is a hologram producing apparatus which includes mechanisms for feeding and taking up a duplicating photosensitive material film, and a contacting liquid dropping mechanism. The apparatus further includes a mechanism for nipping an excess of contacting liquid dropped, a mechanism for drying the contacting liquid attached to the exposed duplicating photosensitive material film, a mechanism for positioning the film, etc.