Sensor device
    4.
    发明授权

    公开(公告)号:US12127417B2

    公开(公告)日:2024-10-22

    申请号:US17732666

    申请日:2022-04-29

    摘要: According to one embodiment, a sensor device includes an insulating base including a meandering strip-shaped portion and an island-shaped portion, a first inorganic insulating film on the island-shaped portion, a first wiring layer on the first inorganic insulating film, a second inorganic insulating film on the first wiring layer, a second wiring layer on the second inorganic insulating film, an organic insulating film on the second wiring layer, a barrier film covering the organic insulating film, a sensor element on the barrier film, and a sealing film covering the sensor element. The barrier film covers side surfaces of the organic insulating film, and the sealing film is in contact with the barrier film and the second inorganic insulating film.

    Photodetectors with semiconductor active layers for under-display fingerprint and gesture sensors

    公开(公告)号:US12089424B2

    公开(公告)日:2024-09-10

    申请号:US17423814

    申请日:2019-01-16

    CPC分类号: H10K30/10 H10K30/82 H10K39/30

    摘要: In various aspects, the present disclosure provides photodetector devices that may be provided in arrays. The photodetector includes a first electrode, a second electrode, and a photoactive layer assembly disposed therebetween. The photoactive layer assembly comprises a first charge transport layer, a second charge transport layer, and an amorphous silicon (a-Si) material substantially free of doping and being substantially free of doping disposed between the first charge transport layer and the second charge transport layer. The photodetector device transmits light in a predetermined range of wavelengths and is capable of generating detectable photocurrent when light having a light intensity of less than or equal to about 50 Lux is directed towards the photodetector device.