公开(公告)号：US12040353B2

公开(公告)日：2024-07-16

申请号：US17458961

申请日：2021-08-27

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Tao-Cheng Liu ,  Ying-Hsun Chen

IPC分类号： H01L23/522 ,  H01G4/30 ,  H01G4/35 ,  H01L49/02

CPC分类号： H01L28/91 ,  H01G4/30 ,  H01G4/35 ,  H01L23/5223

摘要： A first-tier capacitor assembly is formed, which includes a first alternating layer stack embedded within a first substrate and including at least two first metallic electrode layers interlaced with at least one first node dielectric layer, and first metallic bonding pads located on a first front surface. A second-tier capacitor assembly is formed, which includes a second alternating layer stack embedded within a second substrate and including at least two second metallic electrode layers interlaced with at least one second node dielectric layers, and second metallic bonding pads located on a second backside surface. The second metallic bonding pads are bonded to the first metallic bonding pads such that each of the at least two first metallic electrode layers contacts a respective one of the at least two second metallic electrode layers. A capacitor with increased capacitance is provided.

公开(公告)号：US11862405B2

公开(公告)日：2024-01-02

申请号：US18082007

申请日：2022-12-15

申请人： TDK CORPORATION

发明人： Yuta Kamo ,  Kenichi Kamehashi ,  Hisashi Tanaka ,  Isao Fujiwara

IPC分类号： H01G4/35 ,  H01G4/224 ,  H01G9/08 ,  H01G9/10

CPC分类号： H01G4/35 ,  H01G4/224 ,  H01G9/08 ,  H01G9/10

摘要： An element body is formed with a through hole to be open at a first main surface and a second main surface opposing each other. A through-conductor includes a first portion located inside the through hole and a second portion protruding from the second main surface. A case surrounds the element body and is electrically insulating. A cover surrounds the second portion and is electrically insulating. A first resin is contained in the case and coats the element body. A second resin is contained in the cover and is located in a space between an inner surface of the element body and the first portion. The second resin has an electrical resistivity less than an electrical resistivity of the first resin.

公开(公告)号：US20230098594A1

公开(公告)日：2023-03-30

申请号：US17484949

申请日：2021-09-24

申请人： Intel Corporation

发明人： Chia-Ching LIN ,  Kaan OGUZ ,  Sou-Chi CHANG ,  Arnab SEN GUPTA ,  I-Cheng TUNG ,  Ian A. YOUNG ,  Matthew V. METZ ,  Uygar E. AVCI ,  Sudarat LEE

IPC分类号： H01G4/30 ,  H01L49/02 ,  H01G4/08 ,  H01G4/35

摘要： Embodiments described herein may be related to apparatuses, processes, and techniques related MIM capacitors that have a multiple trench structure to increase a charge density, where a dielectric of the MIM capacitor includes a perovskite-based material. In embodiments, a first electrically conductive layer may be coupled with a top metal layer of the MIM, and/or a second conductive layer may be coupled with a bottom metal layer of the MIM to reduce RC effects. Other embodiments may be described and/or claimed.

公开(公告)号：US11596794B2

公开(公告)日：2023-03-07

申请号：US16722593

申请日：2019-12-20

申请人： NeuSpera Medical Inc.

发明人： Alexander Yeh ,  Hui Zhang ,  Thomas Burpee Ellsworth, III

IPC分类号： A61N1/00 ,  A61N1/36 ,  A61N1/375 ,  H02J50/20 ,  A61N1/08 ,  H01G4/35 ,  H01Q1/38 ,  A61N1/372 ,  A61N1/378 ,  A61N1/05 ,  A61N1/02

摘要： Systems, devices, and methods are discussed herein for wirelessly transmitting power and/or data to an implanted device, such as an implanted electrostimulator device. In an example, the subject matter includes a layered transmitter device with multiple conductive planes and excitation features. The transmitter device can be tuned to identify and apply device parameters for efficient wireless communication with a deeply implanted device. The transmitter is generally configured for midfield powering applications by providing signals that give rise to propagating signals inside of body tissue.

公开(公告)号：US20230063050A1

公开(公告)日：2023-03-02

申请号：US17458984

申请日：2021-08-27

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Fu-Chiang KUO

IPC分类号： H01L49/02 ,  H01G4/35 ,  H01G4/30

摘要： A semiconductor structure includes a substrate containing first-type deep trenches and second-type deep trenches. The first-type deep trenches and the second-type deep trenches have lengthwise sidewalls that laterally extend along different directions. The semiconductor structure includes a capacitor structure, which includes a layer stack containing at least three metallic electrode layers interlaced with at least two node dielectric layers. Each layer within the layer stack includes a horizontally-extending portion that overlies a top surface of the substrate and vertically-extending portions that protrude downward into a respective one of the first-type deep trenches and second-type deep trenches. The different orientations of the lengthwise directions of the deep trenches reduces deformation of the semiconductor structure. Stress-relief structures may be formed in corner regions of the capacitor structure to provide structural reinforcement.

公开(公告)号：US11569042B2

公开(公告)日：2023-01-31

申请号：US17154330

申请日：2021-01-21

申请人： NIPPON CHEMI-CON CORPORATION

发明人： Ryuuta Inoue ,  Yu Miura ,  Kouichi Nakata

IPC分类号： H01G4/35 ,  H01G4/224 ,  H01G9/10 ,  H01G11/78 ,  H01G9/08 ,  H01G2/02 ,  H01G2/06 ,  H01G11/84 ,  H01G11/80

摘要： A capacitor and a method for manufacturing the capacitor are provided. The capacitor comprises (1) a capacitor main body including an outer package case, an opening sealing member attached to an inside of an open portion of the outer package case and a terminal lead penetrating through the opening sealing member; (2) a base attached to an outside of the open portion of the outer package case, the base including an insertion through hole through which the terminal lead passes to be disposed on an outer side of the base; and (3) a resin layer between the base and the opening sealing member.

公开(公告)号：US11541233B2

公开(公告)日：2023-01-03

申请号：US17181416

申请日：2021-02-22

申请人： Greatbatch Ltd.

发明人： Christine A. Frysz ,  Robert A. Stevenson ,  Jason Woods

IPC分类号： A61N1/00 ,  A61N1/08 ,  H01G4/005 ,  H01G4/30 ,  H01G4/35 ,  A61N1/375 ,  H01G4/236 ,  A61N1/36 ,  A61N1/39 ,  A61N1/362 ,  H01G4/12 ,  H03H1/00 ,  A61N1/37

摘要： A hermetically sealed feedthrough assembly for an active implantable medical device having an oxide-resistant electrical attachment for connection to an EMI filter, an EMI filter circuit board, an AIMD circuit board, or AIMD electronics. The oxide-resistant electrical attachment, including an oxide-resistant sputter layer 165 is disposed on the device side surface of the hermetic seal ferrule over which an ECA stripe is provided. The ECA stripe may comprise one of a thermal-setting electrically conductive adhesive, an electrically conductive polymer, an electrically conductive epoxy, an electrically conductive silicone, an electrically conductive polyimide, or a thermal-setting electrically conductive polyimide, such as those manufactured by Ablestick Corporation. The oxide-free electrical attachment between the ECA stripe and the filter or AIMD circuits may comprise one of gold, platinum, palladium, silver, iridium, rhenium, rhodium, tantalum, tungsten, niobium, zirconium, vanadium, and combinations or alloys thereof.

公开(公告)号：US20220323771A1

公开(公告)日：2022-10-13

申请号：US17596018

申请日：2020-06-08

申请人： Boston Scientific Neuromodulation Corporation

发明人： Joey Chen ,  Daniel Aghassian

IPC分类号： A61N1/372 ,  H01G4/35

摘要： Implantable medical devices (IMDs) are disclosed which are capable of wirelessly receiving power from a magnetic field to power the IMD or charge its battery, but which do not use a wire-wound coil for magnetic field reception. The IMD can include a case housing control circuitry for the IMD, in which at least a portion of the case is conductive, with a case current formed in the conductive case portion in response to the magnetic field. The IMD includes power reception circuitry inside the case, and includes various examples of first and second electrical connections used to divert at least some of the case current as a power current to the power reception circuitry, thus allowing the power reception circuitry to use the power current to provide power to the IMD or to charge its battery.

公开(公告)号：US11443898B2

公开(公告)日：2022-09-13

申请号：US16156708

申请日：2018-10-10

申请人： Presidio Components. Inc.

发明人： Hung Van Trinh ,  Alan Devoe ,  Lambert Devoe

IPC分类号： H01G4/30 ,  H01G4/12 ,  H01G4/35 ,  H01G4/012 ,  H01L49/02

摘要： A monolithic ceramic capacitor has a plurality of dielectric layers and a plurality of conductive layers sintered together to form a substantially monolithic ceramic body. The ceramic body defines at least one void between the dielectric and conductive layers. The void is at least partially enclosed within the ceramic body and bounded by at least a portion of a dielectric layer, a first conductive layer, and a second conductive layer. Within the dielectric body, the first and second conductive layers are connected in a nonconductive manner.

公开(公告)号：US11344734B2

公开(公告)日：2022-05-31

申请号：US16589752

申请日：2019-10-01

申请人： Greatbatch Ltd.

发明人： Robert A. Stevenson ,  Christine A. Frysz ,  Keith W. Seitz ,  Thomas Marzano ,  Marc Gregory Martino

IPC分类号： A61N1/375 ,  H01G4/40 ,  H01G4/005 ,  A61N1/08 ,  H01R43/00 ,  C22C29/12 ,  H02G3/22 ,  H01G4/30 ,  B23K35/30 ,  H01G2/10 ,  H01G4/35 ,  H01R13/52 ,  H01G4/236 ,  B23K35/32 ,  H01R4/02 ,  H01R13/719 ,  B23K35/02 ,  A61N1/05 ,  H01G4/12 ,  A61N1/372 ,  B22F7/08 ,  B22F1/10

摘要： A hermetically sealed filtered feedthrough assembly attachable to an AIMD includes an insulator hermetically sealing the opening of a ferrule with a gold braze. The ferrule includes a peninsula extending into the ferrule opening and the insulator has a cutout matching the peninsula. A sintered platinum-containing paste hermetically seals at least one via hole extending through the insulator. At least one capacitor is disposed on the device side. An active electrical connection electrically connects the capacitor active metallization to the sintered paste. A ground electrical connection electrically connects the capacitor ground metallization disposed within a capacitor ground passageway to the portion of the gold braze along the ferrule peninsula. The dielectric of the capacitor may be less than 1,000 k.