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    Thermoelectric Device Structures
    1.
    发明申请
    Thermoelectric Device Structures 有权

    公开(公告)号：US20230012332A1

    公开(公告)日：2023-01-12

    申请号：US17949209

    申请日：2022-09-20

    申请人： Sheetak, Inc.

    发明人： Uttam Ghoshal

    IPC分类号： H01L35/08 ,  H01L35/16 ,  H01L35/18 ,  H01L35/20 ,  H01L35/22 ,  H01L35/32

    摘要： The present disclosure is related to structures for and methods for producing thermoelectric devices. The thermoelectric devices include multiple stages of thermoelements. Each stage includes alternating n-type and p-type thermoelements. The stages are sandwiched between upper and lower sets of metal links fabricated on a pair of substrate layers. The metal links electrically connect pairs of n-type and p-type thermoelements from each stage. There may be additional sets of metal links between the multiple stages. The individual thermoelements may be sized to handle differing amounts of electric current to optimize performance based on their location within the multistage device.

    INTEGRATED DUAL-SIDED ALL-IN-ONE ENERGY SYSTEM INCLUDING PLURAL VERTICALLY STACKED DUAL-SIDED ALL-IN-ONE ENERGY APPARATUSES
    6.
    发明申请
    INTEGRATED DUAL-SIDED ALL-IN-ONE ENERGY SYSTEM INCLUDING PLURAL VERTICALLY STACKED DUAL-SIDED ALL-IN-ONE ENERGY APPARATUSES 有权

    公开(公告)号：US20220223777A1

    公开(公告)日：2022-07-14

    申请号：US17365245

    申请日：2021-07-01

    申请人： Korea University Research and Business Foundation

    发明人： Sang Sig KIM ,  Kyoung Ah CHO ,  Yoon Beom PARK

    IPC分类号： H01L35/32 ,  H01L35/16 ,  H01L35/18 ,  H01L35/22

    摘要： The present disclosure relates to an integrated dual-sided all-in-one energy system including a plurality of vertically stacked dual-sided all-in-one energy apparatuses, each including an energy-harvesting device and an energy-storage device disposed on both sides of a substrate, and according to one embodiment of the present disclosure, an integrated dual-sided all-in-one energy system may include a plurality of dual-sided all-in-one energy apparatuses, each including an energy-harvesting device that is formed as an electrode pattern on one side of a substrate and generates electrical energy by harvesting energy based on a temperature difference between a first side and a second side and an energy-storage device that is formed on the other side of the substrate and is selectively connected to the energy-harvesting device based on the electrode pattern to store the generated electrical energy.

    Thermoelectric conversion element
    7.
    发明授权
    Thermoelectric conversion element 有权

    公开(公告)号：US11384107B2

    公开(公告)日：2022-07-12

    申请号：US17050655

    申请日：2019-04-26

    申请人： JAPAN SCIENCE AND TECHNOLOGY AGENCY

    发明人： Takumi Konno ,  Satoshi Yamashita ,  Yasuhiro Nakazawa ,  Nobuto Yoshinari

    IPC分类号： H01L35/24 ,  C07F15/00 ,  F25B21/02 ,  H01L35/16 ,  H01L35/22

    摘要： Provided is an easy-to-process thermoelectric conversion device whose shape can be freely changed. The device is provided containing electrodes and an ionic solid, wherein the ionic solid has: an anionic heterometal complex aggregated to form a crystal lattice; and a cationic species present in interstices of the crystal lattice, and wherein the anionic heterometal complex includes: a metal M1 selected from the group consisting of the elements of Groups 8, 9 and 10 of the Periodic Table and Cr and Mn; a metal M2 selected from the group consisting of the elements of Groups 11 and 12 of the Periodic Table; and a ligand.

    Thermoelectric leg and thermoelectric element comprising same
    8.
    发明授权
    Thermoelectric leg and thermoelectric element comprising same 有权

    公开(公告)号：US11342490B2

    公开(公告)日：2022-05-24

    申请号：US16998412

    申请日：2020-08-20

    申请人： LG INNOTEK CO., LTD.

    发明人： Tsuyoshi Tosho

    IPC分类号： H01L35/16 ,  H01L35/32 ,  H01L35/34 ,  H01L35/18 ,  H01L35/26 ,  H01L35/12 ,  H01L35/02 ,  H01L35/10

    摘要： A method may be provided of manufacturing a thermoelectric leg. The method may include preparing a first metal substrate including a first metal, and forming a first plated layer including a second metal on the first metal substrate. The method may also include disposing a layer including tellurium (Te) on the first plated layer, and forming a portion of the first plated layer as a first bonding layer by reacting the second metal and the Te. The method also includes disposing a thermoelectric material layer including bismuth (Bi) and Te on an upper surface of the first bonding layer, and disposing a second metal substrate, on which a second bonding layer and a second plated layer are formed, on the thermoelectric material layer, and sintering.