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公开(公告)号：US11600866B2
公开(公告)日：2023-03-07
申请号：US16437459
申请日：2019-06-11
摘要： A semiconductor solid state battery has an insulating layer provided between an N-type semiconductor and a P-type semiconductor. The first insulating layer preferably has a thickness of 3 nm to 30 μm and a dielectric constant of 10 or less. The first insulating layer preferably has a density of 60% or more of a bulk body. The semiconductor layer preferably has a capture level introduced. The semiconductor solid state battery can eliminate leakage of an electrolyte solution.
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公开(公告)号：US20220251712A1
公开(公告)日：2022-08-11
申请号：US17257223
申请日：2019-07-11
申请人： NEXT INNOVATION INC.
发明人： Hiroshi Michiwaki
IPC分类号： C23C28/00 , H01L49/00 , H05K3/44 , H05K1/05 , C25D5/48 , C25D5/02 , C23C22/07 , G01R27/02 , G01R31/12
摘要： An insulation layer formation method comprises: a first step in which a surface treatment is applied to a base material to form thereon a high-resistance layer having high electric resistivity; a second step in which metal plating parts are formed on the base material that has undergone the first step in such a manner as to allow a high-resistance layer to be formed thereon; and a third process in which a high-resistance layer is formed on the base material that has undergone the second step.
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3.发明申请公开(公告)号：US20220230761A1
公开(公告)日：2022-07-21
申请号：US17577648
申请日：2022-01-18
发明人： Marc Harris , Deni Hogan
摘要： A system, method, diagnostic and container delivery system for manipulating a target, by manipulating with the quantum coherence of the target. The method includes identifying intrinsic parameters of the target and determining target-tuned design factors based at least partially on the intrinsic parameters. Target-tuned electrons and respective associate fields are generated based in part on the target-tuned design factor. The target-tuned electrons are transformed the from an unquantized state into target-tuned artificial atoms with quantized energy levels. The method may include preparing a container to carry the unquantized target-tuned electrons, the container being composed of superconductor quantum dots. The unquantized target-tuned electrons are transferred to the container to form the target-tuned artificial atoms having quantized target-tuned electrons, which may be delivered to the target as a manipulating agent. Alternatively, the unquantized target-tuned electrons may be delivered directly to the subject.
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公开(公告)号：US11334322B2
公开(公告)日：2022-05-17
申请号：US17361182
申请日：2021-06-28
摘要： A security test logic system can include a non-transitory memory configured to store measurements from a measurement apparatus, the measurement outputs comprising indications of presence or absence of coincidences where particles are detected at more than one detector at substantially the same time, the detectors being at the end of different channels from a particle source and having substantially the same length. The system can include a processor configured to compute a test statistic from the stored measurements. The test statistic may express a Bell inequality, and the system can compare the test statistic with a threshold. The processor can be configured to generate and output a certificate certifying that the measurements are from a quantum system if the value of the computed test statistic passes the threshold.
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公开(公告)号：US20220069219A1
公开(公告)日：2022-03-03
申请号：US17134953
申请日：2020-12-28
摘要： Apparatus, methods, and systems are disclosed for robust scalable topological quantum computing. Quantum dots are fabricated as van der Waals heterostructures, supporting localized topological phases and non-Abelian anyons (quasiparticles). Large bandgaps provide noise immunity. Three-dot structures include an intermediate quantum dot between two computational quantum dots. With the intermediate quantum dot in an OFF state, quasiparticles at the computational quantum dots can be isolated, with long lifetimes. Alternatively, the intermediate quantum dot can be controlled to decrease the quasiparticle tunneling barrier, enabling fast computing operations. A computationally universal suite of operations includes quasiparticle initialization, braiding, fusion, and readout of fused quasiparticle states, with, optionally, transport or tunable interactions—all topologically protected. Robust qubits can be operated without error correction. Quasilinear arrays of quantum dots or qubits can be scaled arbitrarily, up to resource limits, and large-scale topological quantum computers can be realized. Extensive two-dimensional arrays can also be used.
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公开(公告)号：US11258379B2
公开(公告)日：2022-02-22
申请号：US16855897
申请日：2020-04-22
发明人： Garret Moddel
摘要： Described herein are devices in which quantum noise is reduced, such as by incorporating the devices as part of or adjacent to a Casimir cavity. The devices with reduced quantum noise can be paired with a free-space electric device to allow for a difference in noise power between the two to be captured.
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公开(公告)号：US11133467B2
公开(公告)日：2021-09-28
申请号：US16940163
申请日：2020-07-27
申请人： Cerfe Labs, Inc.
IPC分类号： H01L21/20 , H01L29/93 , H01L49/00 , H01L45/00 , H01L27/24 , H01L27/08 , H01L29/861 , H01L29/24
摘要： Subject matter disclosed herein may relate to programmable fabrics including correlated electron switch devices.
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公开(公告)号：US20210272007A1
公开(公告)日：2021-09-02
申请号：US17188358
申请日：2021-03-01
IPC分类号： G06N10/00 , H01L49/00 , H03K19/195
摘要： An interface for communicating with qubits, the interface including one or more splitters splitting a plurality of signals from a modulated optical carrier and outputting the signals to a plurality of outputs. In one example, the signals include a plurality of different input signals used for exciting or controlling the one or more qubits. In another example, the signals include a plurality of output signals received from the one or more qubits, wherein the output signals used to read one or more states of the one or more qubits.
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公开(公告)号：US11069790B2
公开(公告)日：2021-07-20
申请号：US16687193
申请日：2019-11-18
申请人： ColdQuanta, Inc.
IPC分类号： H01L29/66 , H01L29/15 , H01L49/00 , H01L29/775 , G06N10/00
摘要： The present invention provides an matter-wave transistor in which the flow of particles (e.g., atoms and molecules) through the transistor is a result of resonant tunneling from a source well, through a gate well and into a drain well (as opposed to being a result of collisions, as in a classical atomtronic transistor). The transistor current of matter-wave particles can be controlled as a function of the breadth of resonant tunneling conditions of the gate well. For example, the resonant tunneling conditions of a gate well that does not include a dipole-oscillating Bose-Einstein condensate (DOBEC) can be broadened by including a DOBEC in the gate well. Similarly, the breadth of resonant tunneling conditions of the gate well can be changed by changing the particle population of a DOBEC in the gate well.
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公开(公告)号：US20210193663A1
公开(公告)日：2021-06-24
申请号：US16721006
申请日：2019-12-19
IPC分类号： H01L27/108 , H01L27/11502 , H01L45/00 , H01L49/00 , H01L29/786 , G11C11/22
摘要： Some embodiments include a memory cell having a non-ohmic device between a transistor source/drain region and a capacitor. Some embodiments include a memory cell having a transistor with a first source/drain region, a second source/drain region, and a channel region between the first and second source/drain regions. A capacitor is electrically coupled to the second source/drain region through a non-ohmic device. The non-ohmic device includes a non-ohmic-device-material which changes conductivity in response to an electrical property along the channel region. The non-ohmic-device-material has a high-resistivity-mode when the electrical property along the channel region is below a threshold level, and transitions to a low-resistivity-mode when the electrical property along the channel region meets or exceeds the threshold level. Some embodiments include a memory array.
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