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    Variable gain distributed amplifier systems and methods
    1.
    发明授权
    Variable gain distributed amplifier systems and methods 有权

    公开(公告)号：US10367463B2

    公开(公告)日：2019-07-30

    申请号：US15177459

    申请日：2016-06-09

    申请人： KEYSIGHT TECHNOLOGIES, INC.

    发明人： David Dascher

    IPC分类号： H03G1/00 ,  H03F3/45 ,  H03F3/55 ,  H03F3/60

    摘要： Distributed amplifier systems and methods are disclosed. An example distributed amplifier system includes first stage traveling wave amplifier (TWA) circuitry that is controllable to provide one of a first set of discrete gain settings. The first stage TWA circuitry includes a first input transmission line, a first output transmission line, and a first plurality of amplifiers coupled antiparallel between the first input transmission line and the first output transmission line. The first set of discrete gain settings has approximately constant logarithmic spacing.

    Amplifier
    3.
    发明授权
    Amplifier 有权

    公开(公告)号：US09825602B2

    公开(公告)日：2017-11-21

    申请号：US15299288

    申请日：2016-10-20

    申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

    发明人： Naoki Itabashi ,  Keiji Tanaka

    IPC分类号： H03F3/55 ,  H03F1/48 ,  H03F1/56 ,  H03F3/45 ,  H03F3/60

    CPC分类号： H03F3/55 ,  H03F1/48 ,  H03F1/565 ,  H03F3/4508 ,  H03F3/45475 ,  H03F3/602 ,  H03F3/605 ,  H03F2200/387 ,  H03F2200/451

    摘要： An amplifier including a pre-amplifier, an impedance converter, and a traveling wave amplifier (TWA) is disclosed. The pre-amplifier receives a differential input signal and has a pair of first output nodes that output a first differential signal by amplifying the differential input signal. Each first output node has first output impedance. The impedance converter includes a pair of first input nodes that receive the first differential signal and a pair of second output nodes that output a second differential signal. Each first input node has first input impedance greater than the first output impedance. The impedance converter converts the first differential signal into the second differential signal. Each second output node has second output impedance smaller than the first output impedance. The TWA includes a pair of transmission lines connected to the pair of the second output nodes. Each transmission line has characteristic impedance matching with the second output impedance.

    SOLID STATE TRAVELING WAVE AMPLIFIER FOR SPACE APPLICATIONS
    4.
    发明申请
    SOLID STATE TRAVELING WAVE AMPLIFIER FOR SPACE APPLICATIONS 有权
    用于空间应用的固态移动波形放大器

    公开(公告)号：US20160359464A1

    公开(公告)日：2016-12-08

    申请号：US14729883

    申请日：2015-06-03

    申请人： Space Systems/Loral, LLC

    发明人： James J. Sowers ,  Perry Peterson

    IPC分类号： H03F3/55 ,  H03F3/19

    CPC分类号： H03F3/55 ,  H03F1/56 ,  H03F3/19 ,  H03F3/195 ,  H03F3/605 ,  H03F2200/387 ,  H03F2200/451

    摘要： A power combining arrangement includes an input divider waveguide and an output combiner waveguide, and a first and second amplifier. The power combining arrangement is configured to amplify RF energy having a characteristic wavelength λ. The first amplifier has a first input electrically coupled with a first output port of the divider waveguide. The second amplifier has a second input electrically coupled with a second output port of the divider waveguide. The first and second output ports are separated by a first distance corresponding to a phase delay 1, the first distance being selected substantially independently of the characteristic wavelength. The first amplifier has a first output electrically coupled with a first input port of the combiner waveguide and the second amplifier has a second output electrically coupled with a second input port of the combiner waveguide. The first and second input ports are separated by the first distance.

    摘要翻译： 功率组合装置包括输入分频器波导和输出组合器波导，以及第一和第二放大器。 功率组合装置被配置为放大具有特征波长λ的RF能量。 第一放大器具有与分压波导的第一输出端电耦合的第一输入。 第二放大器具有与分压波导的第二输出端电耦合的第二输入。 第一和第二输出端口被分开对应于相位延迟1的第一距离，第一距离被选择为基本上独立于特征波长。 第一放大器具有与组合器波导的第一输入端电耦合的第一输出，而第二放大器具有与组合器波导的第二输入端电耦合的第二输出。 第一和第二输入端口分开第一距离。

    Dual Schottky contact avalanche semiconductor structure with electrode spacing equal to EPI layer thickness
    5.
    发明授权
    Dual Schottky contact avalanche semiconductor structure with electrode spacing equal to EPI layer thickness 失效
    双肖特基接触雪崩半导体结构，电极间距等于EPI层厚度

    公开(公告)号：US4286276A

    公开(公告)日：1981-08-25

    申请号：US21767

    申请日：1979-03-19

    申请人： Felix Diamand

    发明人： Felix Diamand

    IPC分类号： H03F3/55 ,  H01L29/864 ,  H01L29/868 ,  H01L29/90

    CPC分类号： H01L29/864 ,  H01L29/868

    摘要： A semiconductor structure comprising two conventional electrodes of an avalanche diode and furthermore a supplementary electrode. In a preferred embodiment the conventional and supplementary electrodes form two combs of which the teeth are intermingled and separated from one another by intervals of the same order of magnitude as the thickness of the active layer wherein the avalanche rises. There are two functioning cases. In a first case the biassing voltage applied to the supplementary electrode is lower than the breakdown voltage and the operating conditions of the avalanche diode is optimised or controlled as in a modulator or a frequency shifter. In a second case the biassing voltage applied to the supplementary electrode is higher than the breakdown voltage and the power and/or efficiency of an amplifier or oscillator using such a structure is increased.

    摘要翻译： 包括雪崩二极管的两个常规电极以及辅助电极的半导体结构。 在优选实施例中，常规和辅助电极形成两个梳齿，其中齿彼此混合并且与雪崩上升的活性层的厚度相同数量级的间隔彼此分开。 有两个功能的情况。 在第一种情况下，施加到辅助电极的偏置电压低于击穿电压，并且雪崩二极管的工作条件如调制器或移相器那样被优化或控制。 在第二种情况下，施加到辅助电极的偏压电压高于击穿电压，并且使用这种结构的放大器或振荡器的功率和/或效率增加。

    Gunn effect power divider
    6.
    发明授权
    Gunn effect power divider 失效
    Gunn效应功率分配器

    公开(公告)号：US3906385A

    公开(公告)日：1975-09-16

    申请号：US53460374

    申请日：1974-12-20

    申请人： TRW INC

    发明人： CLAXTON DALE H

    IPC分类号： H03F3/10 ,  H03F3/55 ,  H03F3/04

    CPC分类号： H03F3/10 ,  H03F3/55

    摘要： A Gunn effect triode is utilized to provide a power divider. The power divider may, for example, be provided with a main branch from which depend two or more legs and from each of which a replica of the input signal is obtained. Since a Gunn effect triode is an amplifier, the output signal is amplified whereas the conventional divider experiences a substantial loss. The power divider is characterized by its extremely small area which may be on the order of 25 microns squared and by its increased sensitivity.

    摘要翻译： 利用Gunn效应三极管提供功率分配器。 功率分配器可以例如设置有主分支，从其分支取决于两个或更多个支路，并且从其分别获得输入信号的副本。 由于Gunn效应三极管是放大器，所以输出信号被放大，而传统的分频器经历了相当大的损耗。 功率分配器的特征在于其极小的面积可以在25微米的数量级上，并且其灵敏度增加。

    Amplifier for microwaves comprising radial waveguide-hybrid coupler
    8.
    发明授权
    Amplifier for microwaves comprising radial waveguide-hybrid coupler 失效
    用于包含辐射波混合耦合器的微波放大器

    公开(公告)号：US3775694A

    公开(公告)日：1973-11-27

    申请号：US3775694D

    申请日：1973-02-02

    申请人： GEN ELECTRIC

    发明人： QUINE J

    IPC分类号： H03F3/55 ,  H03F3/60

    CPC分类号： H03F3/55 ,  H03F2200/198

    摘要： A radial waveguide-3dB hybrid coupler in a circular configuration comprises two coaxial radial wave-guides, one with an input port and one with an output port, having a branch-guide hybrid coupler formed in the common broad wall. Dual arrays of one-port, reflective type, power amplifying modules are mounted at the periphery of the waveguide structure. Input power is coupled to both module arrays and reflected to the output port to provide gain-enhanced output power over broad bandwidths.

    摘要翻译： 圆形构造的径向波导3dB混合耦合器包括两个同轴径向波导，一个具有输入端口，一个具有输出端口，具有形成在公共宽壁中的分支引导混合耦合器。 单端口反射型功率放大模块的双重阵列安装在波导结构的外围。 输入功率耦合到两个模块阵列并反射到输出端口，以在宽带宽上提供增益增强的输出功率。

    Solid-state transferred electron effect device
    9.
    发明授权
    Solid-state transferred electron effect device 失效
    固态转移电子效应器件

    公开(公告)号：US3619801A

    公开(公告)日：1971-11-09

    申请号：US3619801D

    申请日：1967-08-23

    申请人： WESTINGHOUSE ELECTRIC CORP

    发明人： HUGHES WAYNE E

    IPC分类号： H03B9/14 ,  H03F3/55 ,  H03F3/60

    CPC分类号： H03F3/55 ,  H03B9/143

    摘要： This invention is directed to a microwave solid-state device incorporating semiconductor devices of the type which exhibit the transferred electron effect. A plurality of these devices provided within a transmission line may provide greater amplification or a larger oscillator output for microwave applications over that of a single device.