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    A PROCESS OF IMAGING A PHOTORESIST WITH MULTIPLE ANTIREFLECTIVE COATINGS
    1.
    发明申请
    A PROCESS OF IMAGING A PHOTORESIST WITH MULTIPLE ANTIREFLECTIVE COATINGS 审中-公开
    使用多层防反射涂层成像光刻胶的过程

    公开(公告)号：WO2006085220A2

    公开(公告)日：2006-08-17

    申请号：PCT/IB2006000409

    申请日：2006-02-09

    Applicant: AZ ELECTRONIC MATERIALS USA

    Inventor： ABDALLAH DAVID J ,  NEISSER MARK O ,  DAMMEL RALPH R ,  PAWLOWSKI GEORG ,  BIAFORE JOHN ,  ROMANO ANDREW R ,  KIM WOOKYU

    CPC classification number: G03F7/091 ,  Y10S430/151

    Abstract: A process for imaging a photoresist comprising the steps of, a) forming a stack of multiple layers of organic antireflective coatings on a substrate; b) forming a coating of a photoresist over the upper layer of the stack of multiple layers of organic antireflective coatings; c) imagewise exposing the photoresist with an exposure equipment; and, d) developing the coating with a developer.

    Abstract translation: 一种使光致抗蚀剂成像的方法，包括以下步骤：a）在衬底上形成多层有机抗反射涂层的叠层; b）在多层有机抗反射涂层的叠层的上层上形成光刻胶涂层; c）用曝光设备使光刻胶成像曝光; 和d）用显影剂显影该涂层。

    A HARDMASK PROCESS FOR FORMING A REVERSE TONE IMAGE
    3.
    发明申请
    A HARDMASK PROCESS FOR FORMING A REVERSE TONE IMAGE 审中-公开
    用于形成反向色调图像的硬膜工艺

    公开(公告)号：WO2010018430A8

    公开(公告)日：2010-04-15

    申请号：PCT/IB2009005146

    申请日：2009-03-30

    Applicant: AZ ELECTRONIC MATERIALS USA

    Inventor： ABDALLAH DAVID J ,  DAMMEL RALPH R ,  NEISSER MARK

    IPC: G03F7/40 ,  H01L21/027

    CPC classification number: G03F7/40 ,  G03F7/0752 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/31055 ,  H01L21/31116 ,  H01L21/31138 ,  Y10T428/24802

    Abstract: The present invention relates to a process for forming an reverse tone image on a device comprising; a) forming an absorbing underlayer on a substrate; b) forming a coating of a positive photoresist over the underlayer; c) forming a photoresist pattern; d) treating the first photoresist pattern with a hardening compound, thereby forming a hardened photoresist pattern; e) forming a silicon coating over the hardened photoresist pattern from a silicon coating composition; f) dry etching the silicon coating to remove the silicon coating till the silicon coating has about the same thickness as the photoresist pattern; and, g) dry etching to remove the photoresist and the underlayer, thereby forming a trench beneath the original position of the photoresist pattern. The invention further relates to a product of the above process and to a microelectronic device made from using the above process.

    Abstract translation: 本发明涉及一种在装置上形成反转色调图像的方法，该装置包括： a）在基底上形成吸收底层; b）在底层上形成正性光刻胶涂层; c）形成光致抗蚀剂图案; d）用硬化化合物处理第一光致抗蚀剂图案，从而形成硬化的光致抗蚀剂图案; e）由硅涂料组合物在硬化的光刻胶图案上形成硅涂层; f）干法刻蚀硅涂层以除去硅涂层，直到硅涂层具有与光刻胶图案大约相同的厚度; 和g）干法蚀刻以除去光致抗蚀剂和底层，由此在光致抗蚀剂图案的原始位置之下形成沟槽。 本发明还涉及上述方法的产品并涉及使用上述方法制成的微电子器件。

    A PROCESS OF IMAGING A DEEP ULTRAVIOLET PHOTORESIST WITH A TOP COATING AND MATERIALS THEREOF
    4.
    发明申请
    A PROCESS OF IMAGING A DEEP ULTRAVIOLET PHOTORESIST WITH A TOP COATING AND MATERIALS THEREOF 审中-公开
    一种具有顶部涂层的深层超紫外线光刻胶的成像方法及其材料

    公开(公告)号：WO2005088397A2

    公开(公告)日：2005-09-22

    申请号：PCT/IB2005000627

    申请日：2005-03-08

    Applicant: AZ ELECTRONIC MATERIALS USA

    Inventor： HOULIHAN FRANCIS M ,  DAMMEL RALPH R ,  ROMANO ANDREW R ,  SAKAMURI RAJ

    IPC: G03C1/76 ,  G03F7/09 ,  G03F7/11 ,  G03F7/20

    CPC classification number: G03F7/2041 ,  G03F7/091 ,  G03F7/11

    Abstract: The present invention relates to a process for imaging , preferably deep ultraviolet (uv), photoresists with a topcoat using, preferably deep uv, immersion lithography. The invention further relates to a barrier coating composition comprising a polymer with at least one ionizable group having a pKa ranging from about -9 to about 11. The invention also relates to a process for imaging a photoresist with a (top) barrier coat to prevent contamination of the photoresist from environmental contaminants.

    Abstract translation: 本发明涉及一种用于使用优选深紫外浸没光刻术的具有顶涂层的成像（优选深紫外（UV））光刻胶的方法。 本发明还涉及包含聚合物的阻隔涂料组合物，所述聚合物具有至少一个具有约-9至约11的pKa的可离子化基团。本发明还涉及用（顶部）阻挡涂层对光致抗蚀剂进行成像以防止 污染环境污染物的光致抗蚀剂。

    POSITIVE-WORKING PHOTOIMAGEABLE BOTTOM ANTIREFLECTIVE COATING
    5.
    发明申请
    POSITIVE-WORKING PHOTOIMAGEABLE BOTTOM ANTIREFLECTIVE COATING 审中-公开
    正面工作的可光学底部防反射涂层

    公开(公告)号：WO2011042770A8

    公开(公告)日：2011-06-30

    申请号：PCT/IB2009007456

    申请日：2009-11-12

    Applicant: AZ ELECTRONIC MATERIALS USA

    Inventor： DAMMEL RALPH R ,  CHAKRAPANI SRINIVASAN ,  PADMANABAN MUNIRATHNA ,  MIYAZAKI SHINJI ,  NG EDWARD W ,  KUDO TAKANORI ,  DIOSES ALBERTO D ,  HOULIHAN FRANCIS M

    IPC: G03F7/09

    CPC classification number: G03F7/091

    Abstract: The present invention relates to a positive bottom photoimageable antireflective coating composition which is capable of being developed in an aqueous alkaline developer, wherein the antireflective coating composition comprises a polymer comprising at least one recurring unit with a chromophore group and one recurring unit with a hydroxyl and/or a carboxyl group, a vinyl ether terminated crosslinking agent of structure (7), and optionally, a photoacid generator and/or an acid and/or a thermal acid generator, where structure (7) is (7) wherein W is selected from (Ci-C30) linear, branched or cyclic alkyl moiety, substituted or unsubstituted (C3-C40) alicyclic hydrocarbon moiety and substituted or unsubstituted (C3-C40) cycloalkylalkylene moiety; R is selected from C1-C10 linear or branched alkylene and n > 2. The invention further relates to a process for using such a composition.

    Abstract translation: 本发明涉及一种能够在含水碱性显影剂中显影的正性底部可光成像抗反射涂料组合物，其中所述抗反射涂料组合物包含聚合物，所述聚合物包含至少一个具有发色团的重复单元和一个具有羟基的重复单元，和 （7）为结构（7）的乙烯基醚封端的交联剂和任选的光酸产生剂和/或酸和/或热酸产生剂，其中结构（7）为 （C 1 -C 30）直链，支链或环状烷基部分，取代或未取代的（C 3 -C 40）脂环烃部分和取代或未取代的（C 3 -C 40）环烷基亚烷基部分; R选自C 1 -C 10直链或支链亚烷基且n≥2。本发明进一步涉及使用这种组合物的方法。

    PHOTORESIST COMPOSITION FOR DEEP ULTRAVIOLET LITHOGRAPHY
    8.
    发明申请
    PHOTORESIST COMPOSITION FOR DEEP ULTRAVIOLET LITHOGRAPHY 审中-公开
    用于深层超紫外光刻的光电组合物

    公开(公告)号：WO2004074928A3

    公开(公告)日：2005-10-13

    申请号：PCT/EP2004001194

    申请日：2004-02-10

    Applicant: AZ ELECTRONIC MATERIALS USA

    Inventor： DAMMEL RALPH R ,  SAKAMURI RAJ ,  HOULIHAN FRANCIS M

    IPC: G03F7/004 ,  G03F7/039

    CPC classification number: G03F7/0395 ,  G03F7/0046

    Abstract: The present invention relates to a photoresist composition comprising a photoacid generator and at least one polymer comprising at least one unit as described by structure (1). The invention also relates to a process for imaging the photoresist composition of the present invention, and to a process of making the polymer in the presence of an organic base.

    Abstract translation: 本发明涉及一种光致抗蚀剂组合物，其包含光致酸产生剂和至少一种包含结构（1）所述的至少一个单元的聚合物。 本发明还涉及用于使本发明的光致抗蚀剂组合物成像的方法以及在有机碱存在下制备聚合物的方法。

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